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Catalog Datasheet	Type	Document Tags	PDF
3VD173600YL Abstract: 1N60 MOS 1N60 Contextual Info: 3VD173600YL 3VD173600YL 高压MOSFET芯片描述 ¾ 3VD173600YL为采用硅外延工艺制造的N沟道增强型600V高压MOS功率场效应晶体管； ¾ 先进的高压分压终止环结构； ¾ 较高的雪崩能量； ¾ 漏源二极管恢复时间快；	Original	3VD173600YL 3VD173600YL 3VD173600YLN 600VMOS O-92-3L 5245dies/wafer 250AVDS 30VVDS 1N60 MOS 1N60	PDF
Contextual Info: 3VD173600YL 3VD173600YL HIGH VOLTAGE MOSFET CHIPS DESCRIPTION ¾ 3VD173600YL is a 600V High voltage N-Channel enhancement mode power MOS-FET chip fabricated in advanced silicon epitaxial planar technology; ¾ Advanced termination scheme to provide enhanced	Original	3VD173600YL 3VD173600YL O-92-3L 5245dies/wafer	PDF

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3VD173600YL

Abstract: 1N60 MOS 1N60
Contextual Info: 3VD173600YL 3VD173600YL 高压MOSFET芯片描述 ¾ 3VD173600YL为采用硅外延工艺制造的N沟道增强型600V高压MOS功率场效应晶体管； ¾ 先进的高压分压终止环结构； ¾ 较高的雪崩能量； ¾ 漏源二极管恢复时间快；

Original

3VD173600YL 3VD173600YL 3VD173600YLN 600VMOS O-92-3L 5245dies/wafer 250AVDS 30VVDS 1N60 MOS 1N60

PDF

Contextual Info: 3VD173600YL 3VD173600YL HIGH VOLTAGE MOSFET CHIPS DESCRIPTION ¾ 3VD173600YL is a 600V High voltage N-Channel enhancement mode power MOS-FET chip fabricated in advanced silicon epitaxial planar technology; ¾ Advanced termination scheme to provide enhanced

Original

3VD173600YL 3VD173600YL O-92-3L 5245dies/wafer

PDF