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3SK324UG Datasheets (2)

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Renesas Technology

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
3SK324UG		Renesas Technology	Si Nch Dual Gate MOS FET UHF RF LOW NOISE Amplifier	Original	PDF	179.37KB	8
3SK324UG		Renesas Technology	Si Nch Dual Gate MOS FET UHF RF LOW NOISE Amplifier	Original	PDF	179.37KB	8

3SK324UG Price and Stock

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Rochester Electronics LLC 3SK324UG-TL-H DUAL N-CHANNEL MOSFET
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	3SK324UG-TL-H	Bulk	27,226		692	1 - 10 - 100 - 1000 $0.43 10000 $0.43	Buy Now
Renesas Electronics Corporation 3SK324UG-TL-E RF MOSFET 3.5V CMPAK-4
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	3SK324UG-TL-E	Tape & Reel				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Verical	3SK324UG-TL-E		21,000		494	1 - 10 - 100 - 1000 $0.63 10000 $0.56	Buy Now
Rochester Electronics	3SK324UG-TL-E		21,000		1	1 - 10 - 100 $0.61 1000 $0.50 10000 $0.45	Buy Now
Renesas Electronics Corporation 3SK324UG-TL-H 3SK324UG-TL-H
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Verical	3SK324UG-TL-H		27,226		962	1 - 10 - 100 - 1000 $0.39 10000 $0.32	Buy Now
Rochester Electronics	3SK324UG-TL-H		27,226		1	1 - 10 - 100 $0.35 1000 $0.29 10000 $0.26	Buy Now
Renesas Electronics Corporation 3SK324UG (Alt: 3SK324UG)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Silica	3SK324UG			28 Weeks	3,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now

3SK324UG Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
3SK324 Abstract: REJ03G0532-0100 3sk324ug Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid	Original	d-900 Unit2607 3SK324 REJ03G0532-0100 3sk324ug	PDF
Contextual Info: 3SK323 Si Nch Dual Gate MOS FET UHF RF LOW NOISE Amplifier REJ03G0531-0100 Rev.1.00 May 18.2005 Features • • • • Low noise characteristics; NF = 1.0 dB typ. at f = 900 MHz High gain characteristics; PG = 24 dB typ. (at f = 900 MHz) Capable low voltage operation; +B = 3.5 V	Original	3SK323 REJ03G0531-0100 PLSP0004ZA-A Unit2607	PDF
3SK324UG Abstract: 3SK324 Contextual Info: 3SK324 Si Nch Dual Gate MOS FET UHF RF LOW NOISE Amplifier REJ03G0532-0100 Rev.1.00 May 18, 2005 Features • • • • Low noise characteristics; NF = 1.0 dB typ. at f = 900 MHz High gain characteristics; PG = 24 dB typ. (at f = 900 MHz) Capable low voltage operation; +B = 3.5 V	Original	3SK324 REJ03G0532-0100 PTSP0004ZA-A temperat-900 Unit2607 3SK324UG 3SK324	PDF
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid	Original	do-900 Unit2607	PDF
3SK323 Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid	Original	d-900 Unit2607 3SK323	PDF
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid	Original	do-900 Unit2607	PDF
3SK323 Abstract: 3SK324 Contextual Info: 3SK323 Si Nch Dual Gate MOS FET UHF RF LOW NOISE Amplifier REJ03G0531-0100 Rev.1.00 May 18.2005 Features • • • • Low noise characteristics; NF = 1.0 dB typ. at f = 900 MHz High gain characteristics; PG = 24 dB typ. (at f = 900 MHz) Capable low voltage operation; +B = 3.5 V	Original	3SK323 REJ03G0531-0100 PLSP0004ZA-A Channel-900 Unit2607 3SK323 3SK324	PDF