3SK29 Search Results

Contextual Info: TOSHIBA 3SK291 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N-CHANNEL DUAL GATE MOS TYPE 3SK291 TV TUNER, UHF RF AMPLIFIER APPLICATIONS : • Superior Cross Modulation Performance • Low Reverse Transfer Capacitance : Crss = 0.016pF Typ. • Low Noise Figure

Contextual Info: TO SHIBA 3SK292 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N-CHANNEL DUAL GATE MOS TYPE 3SK292 mm TV TUNER, VHF RF AM PLIFIER APPLICATION • Superior Cross Modulation Performance. • Low Reverse Transfer Capacitance : Crgg = 20fF Typ. • Low Noise Figure

Contextual Info: 3SK293 東芝電界効果トランジスタ シリコンNチャネルデュアルゲートMOS形 3SK293 TVチューナ, UHF高周波増幅用 • 単位: mm 混変調特性が非常に優れています。 • 帰還容量が小さい。 : Crss = 16 fF 標準

3SK296

Abstract: DSA003641
Contextual Info: 3SK296 Silicon N-Channel Dual Gate MOS FET ADE-208-388A Z 2nd. Edition Mar. 2001 Application UHF RF amplifier Features • Low noise figure. NF = 2.0 dB Typ. at f = 900 MHz • Capable of low voltage operation Outline CMPAK–4 2 3 1 4 Note: 1. Source 2. Gate1

Hitachi DSA002759

Contextual Info: 3SK295 Silicon N-Channel Dual Gate MOS FET ADE-208-387 1st. Edition Application UHF RF amplifier Features • Low noise figure. NF = 2.0 dB typ. at f = 900 MHz • Capable of low voltage operation Outline 3SK295 Absolute Maximum Ratings Ta = 25°C Item Symbol

Hitachi DSA002759

Contextual Info: 3SK296 Silicon N-Channel Dual Gate MOS FET ADE-208-388 1st. Edition Application UHF RF amplifier Features • Low noise figure. NF = 2.0 dB Typ. at f = 900 MHz • Capable of low voltage operation Outline 3SK296 Absolute Maximum Ratings Ta = 25°C Item Symbol

Contextual Info: DATA SHEET NEC MES FIELD EFFECT TRANSISTOR 3SK299 RF AMP. FOR UHF TV TUNER N-CHANNEL GaAs DUAL-GATE MES FIFLD-EFFECT TRANSISTOR 4 PIN SMALL MINI MOLD FEATURES P A C K A G E D IM E N S IO N S Suitable for use as R F am plifier in U H F T V tuner. in millimeters

3SK294

Contextual Info: TO SHIBA 3SK294 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N-CHANNEL DUAL GATE MOS TYPE 3SK294 TV TUNER, VHF RF AM PLIFIER APPLICATION • Superior Cross Modulation Performance • Low Reverse Transfer Capacitance : Crss = 20fF Typ. • Low Noise Figure : NF = 1.4dB (Typ.)

3SK295

Abstract: DSA003641
Contextual Info: 3SK295 Silicon N-Channel Dual Gate MOS FET ADE-208-387A Z 2nd. Edition Mar. 2001 Application UHF RF amplifier Features • Low noise figure. NF = 2.0 dB typ. at f = 900 MHz • Capable of low voltage operation Outline MPAK-4 2 3 1 4 Note: 1. Source 2. Gate1

3SK294

Contextual Info: 3SK294 TOSHIBA Field Effect Transistor Silicon N-Channel Dual Gate MOS Type 3SK294 TV Tuner, VHF RF Amplifier Application Unit: mm • Superior cross modulation performance • Low reverse transfer capacitance: Crss = 20 fF typ. • Low noise figure: NF = 1.4dB (typ.)

3SK291

Contextual Info: 3SK291 TOSHIBA Field Effect Transistor Silicon N-Channel Dual Gate MOS Type 3SK291 TV Tuner, UHF RF Amplifier Applications Unit: mm • Superior cross modulation performance • Low reverse transfer capacitance: Crss = 0.016 pF typ. • Low noise figure: NF = 1.5dB (typ.)

3SK291

Abstract: Tv Diagram toshiba
Contextual Info: 3SK291 TOSHIBA Field Effect Transistor Silicon N-Channel Dual Gate MOS Type 3SK291 TV Tuner, UHF RF Amplifier Applications Unit: mm • Superior cross modulation performance • Low reverse transfer capacitance: Crss = 0.016 pF typ. • Low noise figure: NF = 1.5dB (typ.)

3SK295

Abstract: 3SK295ZQ-TL-E
Contextual Info: 3SK295 Silicon N-Channel Dual Gate MOS FET REJ03G0814-0300 Previous ADE-208-387A Rev.3.00 Aug. 10, 2005 Application • UHF RF amplifier Features • Low noise figure. NF = 2.0 dB typ. at f = 900 MHz • Capable of low voltage operation Outline RENESAS Package code: PLSP0004ZA-A

3SK294

Contextual Info: 3SK294 TOSHIBA Field Effect Transistor Silicon N-Channel Dual Gate MOS Type 3SK294 TV Tuner, VHF RF Amplifier Application Unit: mm • Superior cross modulation performance · Low reverse transfer capacitance: Crss = 20 fF typ. · Low noise figure: NF = 1.4dB (typ.)

NEC U71

Abstract: 3SK299 U71 nec
Contextual Info: DATA SHEET MES FIELD EFFECT TRANSISTOR 3SK299 RF AMP. FOR UHF TV TUNER N-CHANNEL GaAs DUAL-GATE MES FIFLD-EFFECT TRANSISTOR 4 PIN SMALL MINI MOLD FEATURES PACKAGE DIMENSIONS • Suitable for use as RF amplifier in UHF TV tuner. in millimeters –4.5 V –4.5

Contextual Info: TOSHIBA 3SK293 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N-CHANNEL DUAL GATE MOS TYPE 3SK293 TV TUNER, UHF RF AM PLIFIER APPLICATIONS • Superior Cross Modulation Performance • Low Reverse Transfer Capacitance : Crss = 16fF Typ. • Low Noise Figure : NF= 1.5dB (Typ.)

3SK291

Contextual Info: TOSHIBA 3SK291 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N-CHANNEL DUAL GATE MOS TYPE 3SK291 mm TV TUNER, UHF RF AM PLIFIER APPLICATIONS • Superior Cross Modulation Performance • Low Reverse Transfer Capacitance : Crss = 0.016pF Typ. • Low Noise Figure

3SK295

Abstract: Hitachi DSA00118
Contextual Info: 3SK295 Silicon N Channel Dual Gate MOS FET Application UHF RF amplifier MPAK-4 Features 2 3 • Low noise figure. NF = 2.0 dB typ. at f = 900 MHz • Capable of low voltage operation 1 4 1. Source 2. Gate1 3. Gate2 4. Drain Table 1 Absolute Maximum Ratings Ta = 25°C

Hitachi DSA00118

Abstract: 3sk298
Contextual Info: 3SK298 Silicon N Channel Dual Gate MOS FET Application UHF / VHF RF amplifier CMPAK-4 Features 2 3 • Low noise figure. NF = 1.0 dB typ. at f = 200 MHz • Capable of low voltage operation 1 4 1. Source 2. Gate1 3. Gate2 4. Drain Table 1 Absolute Maximum Ratings Ta = 25°C

3SK293

Contextual Info: TO SHIBA 3SK293 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N-CHANNEL DUAL GATE MOS TYPE 3SK293 TV TUNER, UHF RF AM PLIFIER APPLICATIONS • Superior Cross Modulation Performance • Low Reverse Transfer Capacitance : Crss = 16fF Typ. • Low Noise Figure : NF = 1.5dB (Typ.)

Contextual Info: 3SK292 TOSHIBA Field Effect Transistor Silicon N-Channel Dual Gate MOS Type 3SK292 TV Tuner, VHF RF Amplifier Application Unit: mm • Superior cross modulation performance. • Low reverse transfer capacitance: Crss = 20 fF typ. • Low noise figure: NF = 1.4dB (typ.)

3SK297

Abstract: DSA003642
Contextual Info: 3SK297 Silicon N-Channel Dual Gate MOS FET ADE-208-389A Z 2nd. Edition Mar. 2001 Application UHF / VHF RF amplifier Features • Low noise figure. NF = 1.0 dB typ. at f = 200 MHz • Capable of low voltage operation Outline MPAK-4 2 3 1 4 Note: 1. Source

Contextual Info: TOSHIBA 3SK292 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N-CHANNEL DUAL GATE MOS TYPE 3SK292 TV TUNER, VHF RF AM PLIFIER APPLICATION • Unit in mm Superior Cross Modulation Performance. • L o w R everse T ran sfe r Capacitanee • L o w N oise F ig u re : C rss —20fF Typ .

Contextual Info: 3SK292 TOSHIBA Field Effect Transistor Silicon N-Channel Dual Gate MOS Type 3SK292 TV Tuner, VHF RF Amplifier Application Unit: mm • Superior cross modulation performance. • Low reverse transfer capacitance: Crss = 20 fF typ. • Low noise figure: NF = 1.4dB (typ.)