3SK272 Search Results

Contextual Info: 3SK272 High Frequency FETs 3SK272 GaAs N-Channel MES Unit : mm For VHF-UHF amplification 2.1±0.1 1.25±0.1 0.425 ● Downsizing of sets by S-mini power package and automatic insertion 2 4 1 Rating VDS 13 Unit V Gate 1-Source voltage VG1S –6 V Gate 2-Source voltage

3sk272

Abstract: SC-82
Contextual Info: High Frequency FETs 3SK272 GaAs N-Channel MES FET For VHF-UHF amplification M Di ain sc te on na tin nc ue e/ d unit: mm 2.1±0.1 • Features 0.425 0.425 V Gate 1 to Source voltage VG1S −6 V Gate 2 to Source voltage VG2S −6 V Drain current ID 50 mA Gate 1 current

3sk272

Contextual Info: High Frequency FETs 3SK272 GaAs N-Channel MES FET For VHF-UHF amplification unit: mm 2.1±0.1 • Features 0.425 1.25±0.10 0.425 Gate 2 to Source voltage Drain current Gate 1 current Gate 2 current Allowable power dissipation Channel temperature Storage temperature

MIP504

Abstract: TO-92NL TO92NL 3sk287 3SK282 "Intelligent Power Device"
Contextual Info: FET, IGBT, IPD • IPDs Intelligent Power Device (continued) Application Output Breakdown Input Voltage Voltage Type No. V Non-insulation A M IP 4 0 3 type power supply Packa ge Output MOS FET Features 25mA (at 5V) • O v e r cu rre n t protection built-in

transistor a2160

Abstract: transistor A1270 A1270 transistor transistor 2sD 4515 1431T transistor transistor A769 mn15151 mini circuits 15542 A1270 Y AN 5606K
Contextual Info: Type Number List • Integrated Circuits MOS LSIs M O S L S Is Page Type No, M N 5117 M N171605 32,42 AM N18P83221 43 M N 3671A 62 M N 5126 87 43 M N 3672 62 M N 5128 87 37 ,4 4,45 46 M N 1256 46 M N 1258 46 M N 1259 46 M N12861 46 M N 12862 46 M N 187124

3SK241

Abstract: 3sk272 2SK649 3sk287 2SK1962 2SK1963 2SK1964 2SK690
Contextual Info: Field Effect Transistors • GaAs MES Metal Semiconductor FETs • For V/UHF Electrical Characteristics (Ta = 2 5 °C) Absolute Maximum Ratings (Ta = 2 5 °C) Application Type No. Vqis * V gs (V) V ds (V) V g 2S Pd (V ) (mW) (dB) NF typ. (dB) PG typ. Package

3sk287

Abstract: 3SK139 3sk247 3SK285
Contextual Info: Transistors Selection Guide by Applications and Functions # High Frequency Silicon Transistors for Tuners (FETs included) Package (No.) Appli­ Band cation TO-92 (D49) New S Type (D39) Cross Pack (Ceramic) (D37(a), D37(b) ) M Type (D40) SS Mini Type S Mini Type S Mini Type

3sk272

Abstract: 2SK1964 2SC1215 3SK202 3SK241 3SK268 3SK144 3sk247 3SK270 3SK271
Contextual Info: Transistors Selection Guide by Applications and Functions • High Frequency Silicon Transistors for Tuners (FETs included) Package (No.) Appli­ Band cation New S Type (D39) TO-92 (D49) Cross Pack (Ceramic) (D37(a), D37(b)ss) M Type (D40) Mini Type (3 pin)

MN1873287

Abstract: an6512n 2sk3190 MN171202 mn158413 mn15142 mn187164 mn6740 AN7210 MN15283
Contextual Info: Maintenance and Discontinued Types <Maintenance Types> Maintenance and Discontinued Types This product is not dealt with anymore. Customers dealing with this product conventionally may contact our sales division in the case of ambiguity. <Discontinued Types>

2SK1964

Abstract: 3SK241 3sk272 2SK1963 3SK273 2SK649 3sk287 2SK1962 2SK690 D37B
Contextual Info: Field Effect Transistors • GaAs MES Metal Semiconductor FETs # For V/UHF Electrical Characteristics (Ta = 2 5 °C) Absolute Maximum Ratings (Ta = 2 5 °C) Application Type No. V ds (V) V g is * V gs (V) (V) P (mW) PG typ. (dB) NF typ. (dB) V g2S Package

K614

Abstract: K 1833 2SK 129 A gn1015 2SK1257 equivalent 2SK1962 2sk 170 Pin GN1021 IC STK411-220E CIRCUIT K996
Contextual Info: Field Effect Trarisistors _ i_ • Silicon Junction FETs Absolute Maximum Ratings Package No. S Mini Type Mini Type (05} Electrical Characteristics (Ta — 25 "C ) (Ta = 25 °C ) Application New S Type TO -92 (D10)