3SK165 Search Results

Contextual Info: 3SK165-2 Transistors N-Channel Dual-Gate UHF/Microwave MESFET V BR DSS (V) V(BR)GSS (V)6 I(D) Max. (A)80m P(D) Max. (W)150m Maximum Operating Temp (øC)150õ I(DSS) Min. (A)30m I(DSS) Max. (A)55m @V(DS) (V) (Test Condition)5 @Temp (øC) (Test Condition)25

lg 7607

Abstract: NF 948 3SK1651 ik 7817 3SK165 dual-gate 1448S NF 935 NF 936
Contextual Info: 3SK165 SONY. GaAs N-Channel Dual-Gate MES FET Description Package O utline u n it: mm The 3S K 165 is a GaAs N-channel Dual-Gate MES FET for low noise UHF amplifiers and mixers. Low noise and high gain characteristics are accomplished by optimum mask pattern design. Easier high frequency

3SK165A

Abstract: 3SK165A-0 3SK165A-1
Contextual Info: 3SK165A GaAs N-channel Dual Gate MES FET For the availability of this product, please contact the sales office. Description The 3SK165A is an N-channel dual gate GaAs MES FET for UHF band low-noise amplification. This FET is suitable for a wide range of applications

3SK165A

Abstract: 3SK165A-0 3SK165A-1 nf 820
Contextual Info: 3SK165A GaAs N-channel Dual Gate MES FET Description The 3SK165A is an N-channel dual gate GaAs MES FET for UHF band low-noise amplification. This FET is suitable for a wide range of applications including cellular, cordless phone. Features • Low voltage operation

Contextual Info: 3SK165-0 Transistors N-Channel Dual-Gate UHF/Microwave MESFET V BR DSS (V) V(BR)GSS (V)6 I(D) Max. (A)80m P(D) Max. (W)150m Maximum Operating Temp (øC)150õ I(DSS) Min. (A)20m I(DSS) Max. (A)55m @V(DS) (V) (Test Condition)5 @Temp (øC) (Test Condition)25

Contextual Info: 3SK165 SONY GaAs N-Channel Dual-Gate MES FET Description The 3SK165 is a GaAs N -Channel D ual-G ate MES FET for low noise UHF amplifiers and mixers. Low noise and high gain characteristics are accomplished by opti­ mum mask pattern design. Easier high frequency circuit

3SK165A

Abstract: 3SK165A-1 3SK165A-0
Contextual Info: 3SK165A GaAs N-channel Dual Gate MES FET Preliminary Description The 3SK165A is an N-channel dual gate GaAs MES FET for UHF band low-noise amplification. This FET is suitable for a wide range of applications including cellular, cordless phone. Features • Low voltage operation

ov 2094

Contextual Info: SONY 3SK165A GaAs N-channel Dual Gate MES FET Preliminary Description The 3SK165A is an N-channel dual gate GaAs MES FET for UHF band low-nolse amplification. This FET is suitable for a wide range of applications including cellular, cordless phone. Features

3SK164

Abstract: 3SK184 3SK174 3SK183 3SK192 3SK159 3SK179 3SK182 199D 3SK171
Contextual Info: - 180 - Jl f m s 4t € ffl & m A $ K a æ 3SK160 m, P d/Pch ]/ 3SK159 fë £ V) * * £ * (V) & m V / U H F RF MOS N DE 1 3.5 DS ±8 30m D V / U H F RF MOS N DE 13. 5 DS ±8 30nt D ÜHF TV Tuner MOS N DE 12 DS ±8 Ig s s (max) (A) (min) (A) Vg s (V) % ft

ILX511B

Abstract: CXA1691 ILX511 optical pickup unit philips cdr 870 sony car stereo CXA2549M ILX511 applications deck sound filter CIRCUIT picture CXA1733M CXD3300R
Contextual Info: CCD Under development CCD AREA IMAGE SENSOR COLOR VIDEO CAMERA CCD IMAGE SENSOR Product name Optical format inch TV system Effective pixels (H x V) Sensitivity Typ. (mV) Package Pins Recommended timing pulse generator ICX038BNA ICX038DNA ICX039BNA ICX039DNA

2sk125

Abstract: SLD300 photo magneto electric 1T32 SLD203 ic dm 311 SGM2006M "CD pickup" 1T339
Contextual Info: 2. 1 Index by Usage Variable Capacitance Diodes Type 1T32 1T32A 1T33 1T33A Package 2P Mini mold 1T33C 1T362 1T363 2P Super Mini mold 1T364 1T359 2P Mini mold 1T360 Remark Application Voltage V) Page Smaller package UH F/V H F tuning 31 AC: 3% (1T32A: 2%)

"Toggle Switch" mts-1

Abstract: MATSUA compressor R12 Transistor mcr 22-8 412 nec c277 icl7621 equivalent km 1667 M37700 Siemens LCD Display C75 Marconi ODU NEC C923
Contextual Info: TCS320IS54B Chip Set User’s Guide PRELIMINARY IMPORTANT NOTICE Texas Instruments TI reserves the right to make changes to its products or to discontinue any semiconductor product or service without notice, and advises its customers to obtain the latest

cx20185

Abstract: UHF FM Transceiver motorola 5118 motorola 5118 uhf CXA1446S Sony Semiconductor ILX511 CXA1691 CXA1733M CXA1619S SONY ICX
Contextual Info: Sony Semiconductor 96.10 Sony Semiconductor Product List ’96 – 10 TABLE OF CONTENTS MEMORY CMOS/Bi-CMOS SRAM . 1 • LINEUP . 1

2SK566

Abstract: 2SK676 2SK989 2SK677 2SK587 3SK165 2SK67-6 2SK9 2SK677-2 2SK676-1
Contextual Info: SONY CORP/COMPONENT PRODS 0 3 0 2 3 0 3 0 0 0 2 1 3 4 =1 IfiE D 2SK676 AIGaAs/GaAs Low Noise Microwave HEMT Description Package Outline Unit: mm The 2 SK 6 7 6 is an AIGaAs/GaAs HEMT fabricated by MOCVD Metal Organic Chemical Vapor Deposition . This 0.5 micron gate FET