3SB DIODE Search Results

GX-18H

Abstract: GX-30MB GX-30M
Contextual Info: A m p lifie r b u ilt-in ty p e ^ GX series k Inductive proximity^ r sensors j Wide variation • Ultra small sensor The smallest 03.8mm size GX-3S and GX-3SB in the industry enabling installation anywhere. • Long-distance sensing The non-flush (GX-18H and units suffied by "ML") type is the

thermistor 40k

Abstract: NEC LASER DIODE PIN DIP thermo electrical cooler module NDL5762P
Contextual Info: N E C ELECTRONICS INC bEE D • b4B?S25 0037^05 3Sb « N E C E DATA SHEET NEC LASER DIODE MODULE NDL5762P ELECTRON DEVICE 1 310 nm OPTICAL FIBER C O M M U N IC A TIO N S InGaAsP DC-PBH PULSED LASER DIODE MODULE DESCRIPTION NDL5762P is a 1310 nm pulsed laser diode DIP module w ith singlemode fiber and internal thermo-electric cooler. It is

3SB diode

Contextual Info: NEC ELECTRONICS INC LEE D • b42?SS5 0037^05 3Sb « N E C E DATA SHEET NEC LASER DIODE MODULE NDL5762P ELECTRON DEVICE 1 310 nm O P T IC A L F IB ER C O M M U N IC A T IO N S InG aAsP D C -P B H P U L SE D L A SE R D IO D E M O D U L E DESCRIPTIO N N D L 5 7 6 2 P is a 1 3 1 0 nm pulsed laser diode D IP module with singlemode fiber and internal thermo-electric cooler. It is

S3V 8* Rectifier

Abstract: s4vb s4vb 10 46 s4vb bridge rectifier
Contextual Info: Large Ifsm I-I S MD • — 0 .8 -1 A - 0 .4 -1 A 1-1.5A Bridge * • S I P - 4~6A *?i gDiodes j 1 0 -2 5 A * S Q IP ;• 2 .3 -2 0 A 2 -1 0 A 1 5 -5 0 A * SI ZB □ S1NB □ S1W B A D S1YB □ S1ZB □ S1NB □ S1 WB(A) □ S1VB □ D2SBA □ — D 2SBD L — Low Noise

Contextual Info: ZENER DIODES 1.5W Part# 1N5913B 1N5914B 1N5915B 1N5916B 1N5917B 1N5918B 1N5919B 1N5920B 1N5921B 1N5922B 1N5923B 1N5924B 1N5925B 1N5926B 1N5927B 1N5928B 1N5929B 1N5930B 1N5931B 1N5932B 1N5933B 1N5934B 1IM5935B 1N5936B 1N5937B 1N5938B 1N5939B 1N5940B 1N5941B

Contextual Info: SIM-20SB GaAs infrared light-emitting diode This infrared GaAs LED is housed in a compact, transparent plastic housing. It has a 1.85 mm diameter lens and radiates at a wavelength of 950 nm making it suitable for silicon light detectors. Matched with the RPM-20PB light

Contextual Info: MICROSEMI CORP/ lilATERTOUN SDE D RECTIFIER ASSEMBLIES • Dai22bl 2flb ■ U N I T JANTX 483-1 Three Phase Bridges, 25 Amp, M ilitary Approved jantx 483-3 DESCRIPTION This military high-current three phase bridge series is assembled with diodes which have been subjected to TX type

Contextual Info: OPTEK Product Bulletin OP168F June 1996 G aA s Plastic Infrared Emitting Diodes Types OP168FA, OP168FB, OP168FC Features • Flat lensed for wide radiation angle • Easily stackable on 0.100 inch 2.54mm hole centers • Mechanically and spectrally matched

Contextual Info: DIODE MODULE DD30HB/KD30HB UL!E76102 M Power Diode Module D D 30 H B series are designed for various rectifier circuits. D D 30 H B has two diode chips connected in series and the mounting base is electrically isolated from elements for simple heatsink construction. Wide voltage rating up to 1,600 V is

BYV24-800R

Abstract: BYV24-1000 3 phase ac motor speed control
Contextual Info: BYV24 SERIES PHILIPS INTERNATI ON AL SbE D I TllOfiSb 0041314 b47 • P H I N FAST SOFT-RECOVERY RECTIFIER DIODES Fast soft-recovery diodes in DO-4 metal envelopes especially suitable for operation as main and commutating diodes in 3-phase a.c. motor speed control inverters and in high frequency power

RECTIFIER DIODES PHILIPS

Abstract: BYV24-800R BYV24 BYV24-800 byv24 1000 BYV24-1000 BYV24-1000R
Contextual Info: BYV24 SERIES _ T - < 2 2 - / 7 PHILIPS INTERN A T I O N A L SbE ]> 711005b 0041314 b47 • P H I N FAST SOFT-RECOVERY RECTIFIER DIODES Fast soft-recovery diodes in DO-4 metal envelopes especially suitable for operation as main and commutating diodes in 3-phase a.c. motor speed control inverters and in high frequency power

bel t3 15a 250v

Abstract: WP90400 zener diode 5t 3AG8 ceramic tube fuse CSA222 3ab1 t125 fuse marking 8AG 3SB400
Contextual Info: Bel Fuse [ b e l ] was founded in 1 9 4 9 to manufacture and sell electronic components, bel offers fuse products ranging from standard glass fuses to miniature and micro fuses. The company has an engineering staff with extensive applications experience and

Contextual Info: Single In-line Package B rid g e D io d e • O U T L IN E D IM E N S IO N S D3SBAD 600V 4A Unit • mm ■ R A T IN G S Absolute Maximum Ratings m g IE tj- & It em Symbol s -g -g is s /t O perating J u n c tio n Tem perature - £ A M % lK J ± Average Rectified Forward Current

fz44

Abstract: IDM144 cepfz44 CEBFZ44 OC310 C3108
Contextual Info: I '""II •1 1 1 .¡In 1 1 mu CEPFZ44/CEBFZ44 M arch 1998 N-Channel Enhancement Mode Field Effect Transistor FEATURES D • 5 5 V , 60A , Rds on =25itiQ @V gs =1 OV • Super high dense cell design for extremely low Rds(on>. • High power and current handling capability.

VP0116N5

Contextual Info: V P 0116 VP0120 in c . P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Order Number / Package Jl BVDSS/ b V dgs Rds<on max) TO-39 TO-92 TO-220 DICEt -160V 2 5 fi -100mA VP0116N2 VP0116N3 VP0116N5 VP0116ND -200V 250 -100mA VP0120N2 VP0120N3

SSD2004

Abstract: 250M
Contextual Info: N&P-CHANNEL POWER MOSFETS SSD2004 FEATURES • Extremely Lower R ds on • Improved inductive ruggedness • Fast switching times • Rugged polysilicon gate cell structure • Low input capacitance • Extended safe operating area • Improved high temperature reliability

Contextual Info: Power 1. Absolute MOS F E T Specification Maximum Ratings Symbol Item Condition Ratings Unit - 5 5 - 1 5 0 ”C Storage Temperature ^stg Channel Temperature ^ch 1 5 0 •c Drain-Source Voltage V dss 6 0 0 V Gate-Sourse Voltage V gss ±3 0 V Drain Current DC

Contextual Info: SIEMENS BUZ 104L SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated • Logic Level • dv/df rated • Low on-resistance • 175 °C operating temperature • also in TO-220 SMD available Type BUZ104L Vos 50 V b 17.5 A flDS on

gunn diode radar module

Abstract: Gunn Diode e band
Contextual Info: MITEL AC2001 Millimeter Wave gunn Oscillator Module S E M IC O N D U C T O R DS5074 Issue 2.0 March 1999 Features • • • • High output power Low phase noise performance Frequency stability with temperature Frequency agility Applications • • •

E2733

Abstract: E2715
Contextual Info: INTERNATIONAL RECTIFIER SbE D m MfiSS45E 0010b47 fi B Selection Guide E1007F INTERNATIONAL RECTIFIER \ ïA> ENCAPSULATED BRIDGE RECTIFIERS INTERNATIONAL RECTIFIER EN C AP SU LA TED B R ID G E EbE D • 4B 55 4S 2 a010b4fi T ■ R E C T IF IE R S _

Contextual Info: rz7 SGS-ni0MS0N ^ 7# M » [IL IO T M I]e S T B 6 NA80 N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR TYPE STB6NA80 V dss RDS on Id 800 V < 1.9 Q 5.7 A TYPICAL R d s (o ii) = 1-68 Q , ± 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100°C

OPB695

Abstract: OPB695A OPB695B OPB696 OPB697 OPB698 3SB diode
Contextual Info: g OPTEK Product Bulletin OPB695 July 1996 Photologic O ptical Flag S w itch Types OPB695, OPB696, OPB697, OPB698 Series Features • Photologic® output • Four output options • Mechanicaf switch replacement • 3-pin connector (Ho Tien L2561 -03),

Contextual Info: 7^ 5 ^ 23 7 OOMbe^fl T7Û • S G T H _ *57 SGS-THOMSON STP5N90 STP5N90FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STP5N 90 STP5N90FI ■ . ■ ■ . ■ . V dss RDS on Id 900 V 900 V < 2.4 Q < 2.4 a 5A 2.8 A TYPICAL Ros(on) = 1.9 a

Contextual Info: SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated • Logic Level Type Vbs b ^ D S o n Package Ordering Code BUZ 73 AL 200 V 5.5 A 0.6 Q TO-220 AB C67078-S1328-A3 Maximum Ratings Parameter Symbol Continuous drain current