3P2M Search Results

nec 3p4m

Abstract: 3P4M nec 3p6m 3P4M scr nec 3p5m 3P2M 3P6M 3P1M nec 3p5m nec 3P1M
Contextual Info: NEC GLA SS PASSIVATED 3A 4.7Arms M0LD SCR ELECTRON DEVICE 3P1 M,3P2M,3P4M,3P5M,3P6M The 3P1M~3P6M are P-gate all diffused mold type SCR granted average OUTLINE DRAWING (U nit : mm) on-state current 3 Amps (Tc = 87°C). Being applied glassivation technique

PPAP level submission requirement table

Abstract: PPAP MANUAL for automotive industry foundry metals quality MANUALS result of 200 prize bond INCOMING MATERIAL INSPECTION checklist, PCB TSMC 90nm sram SMD a006 ISO 9001 Sony foundry INCOMING MATERIAL INSPECTION procedure INCOMING RAW MATERIAL INSPECTION procedure
Contextual Info: Contents Contents i Chapter 1 Quality Management 1.1 Quality Policy 1.2 Quality Organization 1.3 ISO 9001 Year 2000 Revision 1.4 Quality Systems 1.4.1 Process Map 1.4.2 Advanced Product Quality Planning 1.4.3 Quality Assurance in the Project Approval Stage

sr-101c

Abstract: SR101C 3S4M 5P2M 5P05M SR615D PH301 SR513D 5P1M 3P4M
Contextual Info: C Opto-Electronic Devices NEPOC E Light-Emitting Diodes Color Package Type No. Material Xp (nm) Red TO-18 (Clear Plastic) TO-18 (Clear Glass) TO-18 (Red Diffused Plastic) TO-18 (Red Diffused Plastic) 3 <j> Plastic Molded (Clear Plastic) 3 0 Plastic Molded (Red Diffused Plastic)

Silicon-Based Technology

Contextual Info: SB61S64K64A Silicon-BasedTechnology Ultra High-Speed PBSRAM 64Kx 64 SYNCHRONOUS PIPELINED-BURST CMOS SRAM Preliminary FEATURES: Single 3.3V -5% and +10% power supply Fast clock access time: 3.75ns/133MHz , 4ns/125MHz , 5ns/100MHz Two clocked chip enable/one clocked chip disable

Contextual Info: SB61S128K64A Silicon-BasedTechnology Ultra High-Speed PBSRAM 128Kx 64 SYNCHRONOUS PIPELINED-BURST CMOS SRAM Preliminary FEATURES: Single 3.3V -5% and +10% power supply Fast clock access time: 3.75ns/133MHz , 4ns/125MHz , 5ns/100MHz Two clocked chip enable/one clocked chip disable

STF12A80

Abstract: BSTC1026 BSTD1046 BTB04-600SAP STF6A80 BSTD1040 TO510DH BSTC1040 TO812NJ BTB15-700B
Contextual Info: Cross Reference For the most up to date cross reference, go to the product portal: Manufacturer type number Manufacturer Philips type number Page number Manufacturer type number Manufacturer

nec 5p05m

Abstract: 5P1M nec nec 3S4M nec 3p4m PH301 3S4M 3p4M sr-101c 5P1M 5P05M
Contextual Info: N E C STC D E L E C T R O N I C S INC • b 457525 O G O b l D S 1 C Opto-Electronic Devices NEPOG E T ^ - D l ■WWMUli- n Light-Em itting Diodes Color p na o rQi Green A m kar MiTiDer Infrared Package Type No. Material TO-18 (Clear Plastic) TO-18 (Clear Glass)

NEC 3P4MH

Abstract: nec 3p4m 3P4M 3P2M 3p4mh 3P1MH 3P4M scr 3P1M
Contextual Info: NEC GLASS PASSIVATED 3A 4.7Arm s MOLD SCR ELECTRON DEVICE 3P1 M H ,3 P 2 M H ,3 P 4 M H The 3P1MH ~ 3P4MH are P-gate all diffused m old ty p e SCR granted average on-state current 3 Amps (T c = 87°C). O U T L IN E D R A W IN G (Unit : mm) Being applied glassivation

SB61S64K64A-4

Abstract: SB61S64K64A-5
Contextual Info: SB61S64K64A Silicon-BasedTechnology Ultra High-Speed PBSRAM 64Kx 64 SYNCHRONOUS PIPELINED-BURST CMOS SRAM Preliminary FEATURES: •Single ■Synchronous ■Fast 3.3V -5% and +10% power supply clock access time: 3.75ns/133MHz , 4ns/125MHz , 5ns/100MHz ■Two clocked chip enable/one clocked chip disable

SB61S128K64A-5

Contextual Info: SB61S128K64A Silicon-BasedTechnology Ultra High-Speed PBSRAM 128Kx 64 SYNCHRONOUS PIPELINED-BURST CMOS SRAM Preliminary FEATURES: •Single ■Synchronous pipelined-operation 3.3V -5% and +10% power supply ■Internally self-timed WRITE cycle clock access time:

nec 3S4M

Abstract: 3S4M nec 3p4m 3P4M nec 5p05m PH301 SR101C sr-101c SG215D 5P1M nec
Contextual Info: N E C ELECTRONICS INC C Opto-Electronic Devices • Light-Emitting Diodes Color n6u Green A m h û i1 M iTiD er Infrared Package Type No. Material TO-18 Clear Plastic TO-18 (Clear Glass) TO-18 (Red Diffused Plastic) TO-18 (Red Diffused Plastic) 30 Plastic Molded (Clear Plastic)