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    3N06L35 Search Results

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    IPG20N06S3L-35

    Abstract: 3N06L35
    Contextual Info: Preliminary Data Sheet OptiMOS -T Power-Transistor IPG20N06S3L-35 Product Summary V DS 55 V R DS on ,max5) 35 mΩ ID 20 A Features • Dual N-channel Logic Level - Enhancement mode P-TDSON-8-4 • AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature


    Original     		IPG20N06S3L-35 3N06L35 IPG20N06S3L-35 3N06L35 PDF

    3N06L35

    Abstract: PG-TDSON-8-4 IPG20N06S3L-35 3N06L
    Contextual Info: IPG20N06S3L-35 OptiMOS -T Power-Transistor Product Summary V DS 55 V R DS on ,max5) 35 mΩ ID 20 A Features • Dual N-channel Logic Level - Enhancement mode PG-TDSON-8-4 • AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature


    Original     		IPG20N06S3L-35 3N06L35 3N06L35 PG-TDSON-8-4 IPG20N06S3L-35 3N06L PDF