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    3N0409 Search Results

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    3N0409

    Contextual Info: IPD50N04S3-09 OptiMOS -T Power-Transistor Product Summary V DS 40 V R DS on ,max 9 mΩ ID 50 A Features • N-channel - Enhancement mode PG-TO252-3-11 • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green package (RoHS compliant)


    Original
    IPD50N04S3-09 PG-TO252-3-11 3N0409 3N0409 PDF

    3N0409

    Abstract: IPD50N04S3-09 PG-TO252-3-11 25A45
    Contextual Info: IPD50N04S3-09 OptiMOS -T Power-Transistor Product Summary V DS 40 V R DS on ,max 9 mΩ ID 50 A Features • N-channel - Enhancement mode PG-TO252-3-11 • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green package (RoHS compliant)


    Original
    IPD50N04S3-09 PG-TO252-3-11 3N0409 3N0409 IPD50N04S3-09 PG-TO252-3-11 25A45 PDF