3G TRANSISTOR Search Results

3g transistor

Abstract: UAA3536 3g amplifier transistor for 3G UAA3537 3G RF signal processing BGY402E HVQFN16 HVQFN24 UAA3580
Contextual Info: 3G RF chipset Compact, radio chipset for stand-alone UMTS applications and 3G phones For maximum design flexibility, Philips Semiconductors has developed a complete radio chipset for the UMTS RF part of a GSM/3G phone that perfectly complements our GSM/GPRS/

qualcomm MSM6280

Abstract: msm6280 Qualcomm chipset MSM7200 msm7200 mediatek iptv motorola Qualcomm Atheros Atheros wifi mediatek mt huawei gsm
Contextual Info: 2006 ANNUAL REPORT Broadband solutions for wireless & wireline communications 3G ANADIGICS is uniquely positioned to capitalize on the rapidly growing voice, Wireless Comm data and video segments of the broad- Quad Play WiMAX band, 3G, wireless and wireline com-

DG09

Abstract: AN-6088 ICC550 an6088 pae12 25PAE
Contextual Info: www.fairchildsemi.com AN-6088 FAN5902 Power Management Solution for Improving the Power Efficiency of 3G WCDMA RF Power Amplifiers Abstract This application note provides the basics for implementing a Dynamic Voltage Scaling DVS power management technique with 3G WCDMA RF power amplifiers (PAs) to

CL05A105KP5NNN

Abstract: CL05B CL05B104K05NNNC CL05B104K CIG21L1R0MNE CL05A105K
Contextual Info: MIC2829 3G/4G HEDGE/LTE PMIC with Six Buck Converters, Eleven LDOs and SIM Card Level Translation General Description The MIC2829 is a highly integrated Power Management Integrated Circuit PMIC designed for 3G/4G (HEDGE/LTE and WiMAX) USB wireless applications. It is

Contextual Info: MIC2829 3G/4G HEDGE/LTE PMIC with Six Buck Converters, Eleven LDOs and SIM Card Level Translation General Description The MIC2829 is a highly integrated Power Management Integrated Circuit PMIC designed for 3G/4G (HEDGE/LTE and WiMAX) USB wireless applications. It is

CL05B104K05NNNC

Abstract: CL05B CL05A475MQ5NRN CIG21W2R2MNE CL05A105KP5NNN CL05C121B5NNNC MIC2829 100k resistor network C32-C37 transistor c36
Contextual Info: MIC2829 Evaluation Board 3G/4G HEDGE/LTE PMIC with Six Buck Converters, Eleven LDOs and SIM Card Level Translation General Description The MIC2829 is a PMIC Power Management Integrated Circuit designed for 3G/4G (HEDGE and LTE) modules. It incorporates six DC/DC step-down converters, eleven

TO 48 A IC MP3 PROCESSOR

Abstract: touchscreen AC97 EH11 ac97 audio chip
Contextual Info: w Efficient audio is essential for low-power 3G mobiles Dudy Sinai Assistant VP of New Product Definition Introduction Many of the design challenges in 3G mobile phones revolve around implementing additional functionality, such as videoconferencing, while prolonging or at least preserving battery life. On the digital side, that has led IC

3g phone CIRCUIT diagram

Abstract: 431 regulator pwm 8pin PS08 sd 431 transistor CM3728IS SK12 RF loop antenna 13Mhz
Contextual Info: CM3728 2.5G/3G CELLULAR PHONE BUCK REGULATOR GENERAL DESCRIPTION FEATURES The CM3728 low-dropout, pulse-width-modulated PWM DC-DC buck regulator is optimized to provide power to the PA in 2.5G/3G cellular phones; however, they may be applied in many other applications where high efficiency is a priority. The

BTM7755G

Contextual Info: Data Sheet, Rev. 2.0, May 2010 BTM7755G High Current H-Bridge Trilith IC 3G Automotive Power High Current H-Bridge BTM7755G Table of Contents Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2

Contextual Info: Data Sheet, Rev. 1.0, May 2010 BTM7745G High Current H-Bridge Trilith IC 3G Automotive Power High Current H-Bridge BTM7745G Table of Contents Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2

BTM7742G

Abstract: BTM7742 PG-DSO-36-29 HS21 HLGF1145
Contextual Info: Data Sheet, Rev. 1.0, May 2010 BTM7742G High Current H-Bridge Trilith IC 3G Automotive Power High Current H-Bridge BTM7742G Table of Contents Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2

transistor 1345

Abstract: CA3246E 4460E 1333E
Contextual Info: S CA3227, CA3246 High-Frequency NPN Transistor Arrays For LowPower Applications at Frequencies Up to 1.5GHz August 1996 Features • Description Gain-Bandwidth Product fT . >3G Hz The CA3227 and CA3246 consist of five general purpose sil­

bc857b

Abstract: BC857C BC857C sot23
Contextual Info: BC857B BC857C SMALL SIGNAL PNP TRANSISTORS • ■ ■ ■ Type Marking BC857B 3F BC857C 3G SILICON EPITAXIAL PLANAR PNP TRANSISTORS MINIATURE PLASTIC PACKAGE FOR SURFACE MOUNTING CIRCUITS LOW CURRENT SWITCHING AND GENERAL PURPOSE APPLICATIONS THE NPN COMPLEMENTARY TYPES ARE

BC857BT

Contextual Info: BC857AT/BT/CT SOT-523 Transistor PNP SOT-523 1. BASE 2. EMITTER 3. COLLECTOR Features — — Ideally suited for automatic insertion For Switching and AF Amplifier Applications MARKING: BC857AT=3E; BC857BT=3F; BC857CT=3G Dimensions in inches and (millimeters)

3D smd marking

Abstract: SMD Transistors 3f SMD IC ts 4141 BC856BW SOT SMD IC BC856W-BC858W BC856AW BC856W BC857AW BC857BW
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP SILICON PLANAR EPITAXIAL TRANSISTORS BC856W , 857W, 858W SOT-323 Formed SMD Package Marking BC856W =3D BC857AW =3E BC856AW =3A BC857BW =3F BC856BW =3B BC857CW =3G

transistor 5cw

Abstract: transistor 5cw 61 sd1466 transistor 6cw TRANSISTOR REPLACEMENT GUIDE 6CW transistor MS3016 transistor selection guide PH1516-2 STM1645-10
Contextual Info: Richardson Electronics 800-737-6937 www.rfpowernet.com RF POWER TRANSISTOR SELECTION GUIDE August 2000 Table of Contents Preface Supplier - Product Matrix Tab Page HF VHF UHF VHF-UHF TV LINEAR General Purpose Cellular, GSM, Paging PCS, DCS, WLL 3G, WCDMA, UMTS, CDMA2000

BC856B

Abstract: BC856 BC856A BC857 BC857A BC857B BC857C BC858 BC858A BC858B
Contextual Info: BC856 BC857 BC858 SILICON PLANAR EPITAXIAL TRANSISTORS P-N -P transistors M arking BC856 = 3D BC856A = 3A BC856B = 3B BC857 = 3H BC857A = 3E BC857B = 3F BC857C = 3G BC858 = 3M BC858A = 3J BC858B = 3K BC858C = 3L PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm

BC856

Abstract: BC856A BC856B BC857 BC857A BC857B BC857C BC858 BC858A BC858B
Contextual Info: BC856 BC857 BC858 SILICON PLANAR EPITAXIAL TRANSISTORS P-N-P transistors Marking BC856 = 3D BC856A = 3A BC856B = 3B BC857 = 3H BC857A = 3E BC857B = 3F BC857C = 3G BC858 = 3M BC858A = 3J BC858B = 3K BC858C = 3L PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm _3.0_

motherboard repair Chip level

Abstract: CMOS090 CMOS065 gsm based digital notice board using arm processor baseband GSM BTS 3G CHIP GENERATION TELECOM RF gsm transceiver IC qubic4
Contextual Info: Philips Semiconductors Our comprehensive portfolio RF ASICs Converters Complete portfolio of ASIC services. Right expertise, processes, tools and manufacturing to tackle 3G challenges. Customer-driven DAC & ADC for high performance and system innovations.

Y12t

Abstract: y12 t
Contextual Info: 33 HARRIS A ugu st 1991 CA3227 CA3246 High-Frequency N -P -N Transistor Arrays For Low-Power Applications at Frequencies Up to 1.5GHz Features Description • Galn-Bandwldth Product f j .>3G H z The CA3227 and CA3246* consist of five general purpose

BC856B 3F

Abstract: 858A
Contextual Info: BC856 BC857 BC858 SILICON PLANAR EPITAXIAL TRANSISTORS P-N -P transistors M arking BC856 = 3D BC856A = 3A BC856B = 3B BC857 = 3H BC857A = 3E BC857B = 3F BC857C = 3G BC858 = 3M BC858A = 3J BC858B = 3K BC858C = 3L PACKAGE OUTLINE DETAILS A LL DIM ENSIONS IN m m

Contextual Info: 32E D • 023b3S0 001731e b H S I R NPN Silicon Switching Transistor _ SIE M E N S / SPCLi SEMICONDS -p. 3g- j| SXT 3904 _ • High current gain: 0.1 to 100 mA • Low collector-emitter saturation voltage Type Marking Ordering code for

AGRA10EM

Abstract: APP550 APP550TM AGR09085EF APP550TM and APP530TM 400-kHz agra 30 TAAD08JU2 AGR09030EF AGR09030GUM
Contextual Info: RF Power Transistor Line RF Power Environment Agere’s RF LDMOS transistors are used in wireless base stations to boost voice, data, and video signals in various frequency ranges. They are targeted for second-generation 2G , 2.5-generation (2.5G), and thirdgeneration (3G) base station

4G Signals

Contextual Info: SP10T Switch Routes 2G/3G/4G Signals This antenna switch module is compact enough for next-generation mobile communications applications, with outstanding electrical performance as a result of intelligent design choices. Nuttapong Srirattana | January 2011