3G MARKING CODE Search Results

part MARKING k48

Abstract: marking bc p28 CMSD4448 W4W MARKING CM0Z15L CMZ5936B CM0Z11V CMZ5945B marking 6ca marking code ca2
Contextual Info: Marking Codes Continued Marking Code Part Number Marking Code 04 04D 04A 04C 04S 040 1A 1A8 1AC 1B 1B8 1C8 1D8 1E 1E8 1F 1F8 1FF 1G 1G8 1H8 1J 1J8 1K 1K8 1L 1L8 1M8 1P 1PC 1QC 1F)C 2AC 2B 2C 2CA 2F 2FC 2G 2PC 2QC 2P 3A 3B 3E 3F 3G 3J 3K 3L 3P 4A 4B 4C 4E

110CT00

Contextual Info: _ IO_I_ 9 _ I_ 8 _ NOTES« 96/06/12 Ü1 18.5 3G.5 48. 5 72. 5 NONE. UNLESS LEVEL * 1. MARKING^ LD 83422801G 834228007 834228013 834228017 834228018 <E PART NUMBER 4^. \ O THERW ISE SPECIFIED. 8 5 |

Contextual Info: 32E D • 023b3S0 001731e b H S I R NPN Silicon Switching Transistor _ SIE M E N S / SPCLi SEMICONDS -p. 3g- j| SXT 3904 _ • High current gain: 0.1 to 100 mA • Low collector-emitter saturation voltage Type Marking Ordering code for

sot-23 Marking 3D

Abstract: BC856 sot-23 MARKING CODE 3d 3D marking sot23 3H SOT23 BC856B SOT23 BC856A BC856B BC857 BC858
Contextual Info: PNP General Purpose Transistor: BC856/857/858 Features: t
Low current max.100mA t
Low voltage (max.65v) Applications: t
SOT-23 Ordering Information Type No. Marking: Package Code: BC856A/B 3D/3A/3B SOT-23 BC857A/B/C 3H/3E/3F/3G SOT-23 BC858A/B/C 3J/3K/3L

Contextual Info: TQM879026 0.7−4 GHz ¼W Digital Variable Gain Amplifier Applications • 3G / 4G Wireless Infrastructure  CDMA, WCDMA, LTE  Repeaters 4x4 mm 24 Pin leadless SMT Package General Description NC DSA Out NC NC Amp2 In NC 24 23 22 21 20 19 Pin 1 Marking

Contextual Info: TQM879026 0.7-4 GHz ¼W Digital Variable Gain Amplifier Applications • 3G / 4G Wireless Infrastructure • Repeaters • LTE / WCDMA / CDMA 24 Pin 4x4 mm leadless SMT Package General Description NC DSA Out NC NC Amp2 In NC 24 23 22 21 20 19 Pin 1 Marking

Contextual Info: TQM879026 0.7−4 GHz ¼W Digital Variable Gain Amplifier Applications • 3G / 4G Wireless Infrastructure  CDMA, WCDMA, LTE  Repeaters 4x4 mm 24 Pin leadless SMT Package General Description NC DSA Out NC NC Amp2 In NC 24 23 22 21 20 19 Pin 1 Marking

TQM879028-PCB2140

Contextual Info: TQM879028 0.7−4.0 GHz ½ W Digital Variable Gain Amplifier Applications • 3G / 4G Wireless Infrastructure  CDMA, WCDMA, LTE  Repeaters 24 Pin 4x4 mm Leadless SMT Package General Description NC DSA Out NC NC Amp2 In NC 23 22 21 20 19 Pin 1 Marking

Contextual Info: DB3J208K Silicon epitaxial planar type Unit: mm For high speed switching circuits • Features  Low forward voltage VF  Halogen-free / RoHS compliant EU RoHS / UL-94 V-0 / MSL: Level 1 compliant  Marking Symbol: 3G  Packaging DB3J208K0L Embossed type (Thermo-compression sealing): 3 000 pcs / reel (standard)

sps gf20

Abstract: gf20 connector EWCAP-15 GF20
Contextual Info: TABLE OF CONTENTS SHEET NO. SHEET DESCRIPTION 1 NOTES 2 KEY CONFIGURATIONS 3 BLADE SEALED ASSEMBLY i SYSTEM PACKAGING 5 BOM n u . a ITTI D © Í7TI ITO I BLADE S E A LE D ASSEM BLY OPTIONAL LASER MARKING THIS SURFACE SEE NOTE 3g. & ^ HD a 5 S 1 > KD Ò

BZX 48c 6v8

Abstract: PT2369 code Cj5 CMXZ11VTO 7006S
Contextual Info: M arking Codes Marking Code Part Number 04 04D 04A 04C 04S 040 1A 1A8 1AC 1B 1B8 1C8 1D8 1E 1E8 1F 1F8 1FF 1G 1G8 1H8 1J 1J8 1K 1K8 1L 1L8 1M8 1P 1PC 1QC 1RC 2AC 2B 2C 2C A 2F 2FC 2G 2 PC 2Q C 2P 3A 3AE 3B 3CE 3E 3F 3G 3J 3K 3L 3P 3SE 4A 4B 4C 4E 4F 4G 4P

SK6626

Abstract: S3C49RAA01 MARKING CODE 16G S3C49VCX03 movinand DECODER error free nand movinand NAND 32G 2g nand mcp 64G nand
Contextual Info: CTL_embedded NAND Code Information 1/3 Last Updated : November 2008 KLXXXXXXXX - XXXXXXX 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 1. Memory (K) 8. VCC & VCCQ 2. MOVI NAND/MCP : L CTL : Controller 3. NAND Function E : Error Free NAND S : eSSD C : Cartridge SIP

Contextual Info: BGA751N7 SiGe Bipolar 3G/3.5G/4G Single-Band LNA Data Sheet Revision 3.1, 2013-01-31 RF & Protection Devices Edition 2013-01-31 Published by Infineon Technologies AG 81726 Munich, Germany 2013 Infineon Technologies AG All Rights Reserved. Legal Disclaimer

Contextual Info: BGA711N7 SiGe Bipolar 3G/3.5G/4G Single-Band LNA Data Sheet Revision 3.1, 2013-01-31 RF & Protection Devices Edition 2013-01-31 Published by Infineon Technologies AG 81726 Munich, Germany 2013 Infineon Technologies AG All Rights Reserved. Legal Disclaimer

Contextual Info: Read/write head TB-EM30WD-H1147-Ex • ATEX category II 3 G, Ex-zone 2 ■ ATEX category II 3 D, Ex-zone 22 ■ Threaded barrel, M30 x 1 ■ Stainless steel 1.4404 ■ ■ ■ ■ ■ ■ Type code Ident no. TB-EM30WD-H1147-Ex 7030385 Mounting condition Ambient temperature

Contextual Info: Read/write head TN-EM30WD-H1147-Ex • ATEX category II 3 G, Ex-zone 2 ■ ATEX category II 3 D, Ex-zone 22 ■ Threaded barrel, M30 x 1 ■ Stainless steel 1.4404 ■ ■ ■ ■ ■ ■ Type code Ident no. TN-EM30WD-H1147-Ex 7030386 Mounting condition Ambient temperature

Contextual Info: Read/write head TN-EM18WD-H1147-Ex • ATEX category II 3 G, Ex-zone 2 ■ ATEX category II 3 D, Ex-zone 22 ■ Threaded barrel, M18 x 1 ■ Stainless steel 1.4404 ■ ■ ■ ■ ■ ■ Type code Ident no. TN-EM18WD-H1147-Ex 7030382 Mounting condition Ambient temperature

LM3291

Abstract: SNVSA12
Contextual Info: LM3291 www.ti.com SNVSA12 – SEPTEMBER 2013 LM3291 Product Brief FEATURES DESCRIPTION • The LM3291 is a high-speed linear amplifier that, with its companion IC LM3290, constitutes an RF Envelope Modulator EM for supplying 3G/4G Power Amplifiers (PA) in envelope tracking systems. The

Contextual Info: Thick Film Chip Resistors Thick Film Chip Resistors 0201, 0402, 0603, 0805, 1206, 1210, 1812, 2010, 2512 Type: ERJ 1G, 2G, 3G, 6G, 8G, 14, 12, 12Z, 1T • Features ● Small size and lightweight For PCB size reduction and lightweight products ● High reliability

recommended land pattern for 0201

Contextual Info: Thick Film Chip Resistors Thick Film Chip Resistors 0201, 0402, 0603, 0805, 1206, 1210, 1812, 2010, 2512 Type: ERJ 1G, 2G, 3G, 6G, 8G, 14, 12, 12Z, 1T n Features l Small size and lightweight For PCB size reduction and lightweight products l High reliability

0201 resistor

Abstract: resistors 0201
Contextual Info: Thick Film Chip Resistors Thick Film Chip Resistors 0201, 0402, 0603, 0805, 1206, 1210, 1812, 2010, 2512 Type: ERJ 1G, 2G, 3G, 6G, 8G, 14, 12, 12Z, 1T n Features l Small size and lightweight l High reliability Metal glaze thick film resistive element and three layers of electrodes

recommended land pattern for type 0201

Abstract: ERJ3G
Contextual Info: Thick Film Chip Resistors Thick Film Chip Resistors 0201, 0402, 0603, 0805, 1206, 1210, 1812, 2010, 2512 Type: ERJ 1G, 2G, 3G, 6G, 8G, 14, 12, 12Z, 1T n Features l Small size and lightweight l High reliability Metal glaze thick film resistive element and three layers of electrodes

Contextual Info: Thick Film Chip Resistors Thick Film Chip Resistors 0201, 0402, 0603, 0805, 1206, 1210, 1812, 2012, 2512 Type: ERJ 1G, 2G, 3G, 6G, 8G, 14, 12, 12Z, 1W, 1WZ n Features l Small size and lightweight For PCB size reduction and lightweight products l High reliability

c639

Abstract: C63716 C337 40 sot-23 MARKING 636 MARKING 68W SOT-23 C-639 F959 sot143 Marking code 5B B304A sot-89 MARKING CODE BN
Contextual Info: SIEMENS Marking Code Sorted by Type Type Package Marking Type Package Marking BA 582 BA 585 BA 592 BA 595 BA 597 BA 885 BAL 74 BAL 99 BAR 14-1 BAR 15-1 BAR 16-1 BAR 17 BAR 60 BAR 61 BAR 63 BAR 63-03W BAR 63-04 BAR 63-05 BAR 63-06 BAR 64 BAR 64-03W BAR 64-04