3F60 Search Results

Contextual Info: Page:62 PowerMOSFET •外観図 P4F60HP2 OUTLI NE Package：FTO220AG （3pi n） ロット記号 （例） Date code 600V4A t ：mm Uni 4.5 10.０ 品名略号 Type No. 0000 13.5 3F60H2 ３.45 煙高耐圧 煙低オン抵抗 煙高速スイッチング /

smd diode 2F

Abstract: smd 2f SMD diode color code Diode smd 2f smd rm 71
Contextual Info: Rectifier Diodes L o w fre q u e n c y re c tify in g 2F Single Diodes Electrical Characteristics Absolute Maximum Ratings Type No. Color Code V rm lo [V ] [A ] D IF 2 0 — 200 60 D 1N 20 60 — 600 — ZOO — 600 D 2F20 — 200 60 D 3F60 — — 600 600

Contextual Info: Page:60 PowerMOSFET OUTLI NE 3F60HP2 Uni t mm Package FTO220AG 3pi n ロット記号 （例） Date code 600V3A 4.5 10.０ 品名略号 Type No. 15.０ 管理番号 （例） Control No. ３.45 0000 3F60H2 13.5 di / dt Feat ur e Hi ghVol t age LowRON Fas

3F60H2

Contextual Info: Page:60 PowerMOSFET •外観図 3F60HP2 OUTLI NE Package：FTO220AG （3pi n） ロット記号 （例） Date code 600V3A t ：mm Uni 4.5 10.０ 品名略号 Type No. 0000 13.5 3F60H2 ３.45 煙高耐圧 煙低オン抵抗 煙高速スイッチング /

Contextual Info: Page:62 PowerMOSFET OUTLI NE P4F60HP2 Uni t mm Package FTO220AG 3pi n ロット記号 （例） Date code 600V4A 4.5 10.０ 品名略号 Type No. 15.０ 管理番号 （例） Control No. ３.45 0000 3F60H2 13.5 di / dt Feat ur e Hi ghVol t age LowRON Fas

3F60H2

Contextual Info: Page:60 PowerMOSFET •外観図 3F60HP2 OUTLI NE Package：FTO220AG （3pi n） ロット記号 （例） Date code 600V3A t ：mm Uni 4.5 10.０ 品名略号 Type No. 0000 13.5 3F60H2 ３.45 煙高耐圧 煙低オン抵抗 煙高速スイッチング /

Contextual Info: Page:62 PowerMOSFET •外観図 P4F60HP2 OUTLI NE Package：FTO220AG （3pi n） ロット記号 （例） Date code 600V4A t ：mm Uni 4.5 10.０ 品名略号 Type No. 0000 13.5 3F60H2 ３.45 煙高耐圧 煙低オン抵抗 煙高速スイッチング /

w19b320

Contextual Info: W19B320AT/B Data Sheet 4M x 8/2M × 16 BITS 3V FLEXIBLE BANK FLASH MEMORY Table of Contents1. GENERAL DESCRIPTION . 4 2. FEATURES . 4

Contextual Info: W28J320B/T 32M 2M x 16/4M × 8 BOOT BLOCK FLASH MEMORY Table of Contents1. GENERAL DESCRIPTION. 3 2. FEATURES . 3

L323C

Contextual Info: ADVANCE INFORMATION AMDZ1 Am29DL32xC 32 Megabit 4 M x 8 -Bit/2 M x 16-Bit CMOS 3.0 Volt-only, Sim ultaneous Operation Flash Mem ory DISTINCTIVE CHARACTERISTICS ARCHITECTURAL ADVANTAGES • Simultaneous Read/Write operations — Data can be continuously read from one bank w hile

3582B

Abstract: AT49BV322D AT49BV322DT AT49BV
Contextual Info: Features • Single Voltage Read/Write Operation: 2.65V to 3.6V • Access Time – 70 ns • Sector Erase Architecture • • • • • • • • • • • • • – Sixty-three 32K Word 64K Bytes Sectors with Individual Write Lockout – Eight 4K Word (8K Bytes) Sectors with Individual Write Lockout

MD-720-3

Abstract: srf 2417 cl-gd7543 HDE 3515 capacitor lsk 561 VGA 20 PIN LCD MONITOR CABLE CONNECTION DIAGRAM MD720-3 CL-PX4072 PC104 pinout LCOS svga
Contextual Info: CL-GD7548 * ’CIRRUS LOGIC9 A d v a n c e H a rd w a re Reference M a n u a l FEATURES • Single-chip XGA/Super VGA LCD controller — Pin-compatible superset of CL-GD7541/7543 SVGA LCD controllers G U I-A ccelerated X G A /S V G A LCD C on troller w ith Low -C ost M ultim edia

edi PB60

Abstract: mcl d01 display EEP12 mcl d01 6502 CPU EDI PB05 ptc x07 mcl d01 94 MARK f1e EEP15
Contextual Info: Suites 2202-7, 22/F, Tower 6, The Gateway, 9 Canton Road, Tsimshatsui, Kowloon, Hong Kong Tel 852 2123 3289 Fax (852) 2123 3393 E-mail: sales@jesstech.com HomePage: http://www.jesstech.com WT5082 V0.97 DESCRIPTION The WT5082 is a high-performance, low-cost, CMOS 8-bit single-chip micro-controller with POCSAG

FPT-48P-M19

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20904-2E FLASH MEMORY CMOS 32 M 4 M x 8/2 M × 16 BIT Dual Operation MBM29DL32TF/BF-70 • DESCRIPTION The MBM29DL32TF/BF are a 32 M-bit, 3.0 V-only Flash memory organized as 4 M bytes of 8 bits each or 2 M words of 16 bits each. These devices are designed to be programmed in-system with the standard system 3.0 V

Contextual Info: ESMT Preliminary F49L320UA/F49L320BA 32 Mbit 4M x 8/2M x 16 3V Only CMOS Flash Memory 1. FEATURES z z z z z z z z z z - Single supply voltage 2.7V-3.6V Fast access time: 70/90 ns 4,194,304x8 / 2,097,152x16 switchable by BYTE pin Compatible with JEDEC standard

mx29lv320ttc

Abstract: MX29LV320T Q0-Q15 SA10
Contextual Info: MX29LV320T/B 32M-BIT [4M x 8 / 2M x 16] SINGLE VOLTAGE 3V ONLY FLASH MEMORY FEATURES • Low Power Consumption - Low active read current: 10mA typical at 5MHz - Low standby current: 200nA (typical) • Minimum 100,000 erase/program cycle • 10-year data retention

Contextual Info: ESMT Preliminary F49L320UA/F49L320BA 32 Mbit 4M x 8/2M x 16 3V Only CMOS Flash Memory 1. FEATURES z z z z z z z z z z - Single supply voltage 2.7V-3.6V Fast access time: 70/90 ns 4,194,304x8 / 2,097,152x16 switchable by BYTE pin Compatible with JEDEC standard

SA70

Abstract: 18FFFFH
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-50204-2E Stacked MCP Multi-Chip Package FLASH MEMORY & SRAM CMOS 32M (x 8/×16) FLASH MEMORY & 4M (× 8/×16) STATIC RAM MB84VD2218XEC-90/MB84VD2219XEC-90 MB84VD2218XEE-90/MB84VD2219XEE-90 • FEATURES • Power supply voltage of 2.7 to 3.3 V

Contextual Info: ISSI IS71VPCF32XS04 3.0 Volt-Only Flash & SRAM COMBO with Stacked Multi-Chip Package MCP — 32 Mbit Simultaneous Operation Flash Memory and 4 Mbit Static RAM MCP FEATURES • Power supply voltage 2.7V to 3.3V • High performance: PRELIMINARY INFORMATION

DL322

Abstract: DL323 DL324
Contextual Info: PRELIMINARY Am41DL32x4G Stacked Multi-Chip Package MCP Flash Memory and SRAM 32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 4 Mbit (512 K x 8-Bit/256 K x 16-Bit) Static RAM DISTINCTIVE CHARACTERISTICS MCP Features

SA70

Abstract: 22a17
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-50207-4E Stacked MCP Multi-Chip Package FLASH MEMORY & SRAM CMOS 32M (x 8/×16) FLASH MEMORY & 8M (× 8/×16) STATIC RAM MB84VD2228XEA/EE-85 MB84VD2229XEA/EE-85 • FEATURES • Power Supply Voltage of 2.7 V to 3.3 V

324T

Abstract: 2MWx16bit
Contextual Info: ADVANCED INFORMATION MX69LW322/324T/B 32M-BIT [X8/X16] FLASH AND 2M-BIT/4M-BIT X8/X16 SRAM MIXED MULTI CHIP PACKAGE MEMORY FEATURES • Supply voltage range: 2.7V to 3.6V • Fast access time: Flash memory:70/90ns SRAM memory:70/85ns • Operation temperature range: -40 ~ 85°C

SAMSUNG MCP

Abstract: samsung K5 MCP BA35 BA4110 ba4410 BA651 Flash Memory SAMSUNG k5
Contextual Info: Preliminary MCP MEMORY K5A3x40YT B B Document Title Multi-Chip Package MEMORY 32M Bit (4Mx8/2Mx16) Dual Bank NOR Flash Memory / 4M(512Kx8/256Kx16) Full CMOS SRAM Revision History Revision No. History 0.0 Initial Draft Draft Date Remark February 22, 2002 Preliminary

MARKING SA70

Abstract: MBM29DL324
Contextual Info: TM SPANSION Flash Memory Data Sheet September 2003 TM This document specifies SPANSION memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification,