3F20 Search Results

Contextual Info: SKN 3F20 THYRISTOR BRIDGE,SCR,BRIDGE Stud Diode Fast Recovery Rectifier Diode SKN 3F20 SKR 3F20 Features # $%&'' *+,)()- *.&(/) # $+01 ()*+,)(2 # 34 1+ 5677 8 (),)(9) ,+'1&/) # :)(%)1;* %)1&' *&9) <;1. /'&99 # # ;=9>'&1+( ?.()&-)- 91>- @$A BC +( 57DE6 3FG

Contextual Info: SKN 3F20 THYRISTOR BRIDGE,SCR,BRIDGE Stud Diode Fast Recovery Rectifier Diode ,# ,#  8 8     8 8    ! 3 1  3 47 89 $ :9  ' &(=8 ), &(=8 )' &(=8'( ), &(=8'( )' &(= ), &(= )' &(='(

Crydom solid state relay

Abstract: 1F25 3F20 D2450 D53TP25D EN50081-1 EN50081-2
Contextual Info: C R YD O M Solid State Relay Filters EUROPE Type 1F25 and 3F20 Typically the level may fall between that required by the domestic EN50081-1 and industrial (EN50081-2) standards, i.e failing the requirements of the one whilst meeting those of the other. The failure

button

Contextual Info: LP150-3F20V00, P/N 509-048 REV 1.2 Belegung und Funktion der Anschlüsse Ansicht Anschlussleiste, Kontaktseite Front PIN O O O O O O O O O O 10 9 8 7 6 5 4 3 2 1 PIN-Nr. Funktion Kabel-Farbe (Original-Typ) PS/2 connection 10 9 8 4 0V CK (Clock) DTA (Daten)

TSM-3F20

Contextual Info: Preliminary TSM-3F20 VCSEL for general purpose FEATURES: • Surface mount package with round emission surface. • Miniature, epoxy molded. • Driving current between 8 to 15 mA. • Nominal 8° emission angle. • Ideal for applications of high resolution sensing.

3F20

Contextual Info: SKN 3F20 THYRISTOR BRIDGE,SCR,BRIDGE Stud Diode Fast Recovery Rectifier Diode ,# ,#  8 8     8 8    ! 3 1  3 47 89 $ :9  ' &(=8 ), &(=8 )' &(=8'( ), &(=8'( )' &(= ), &(= )' &(='(

Contextual Info: SKN 3F20 Stud Diode Fast Recovery Rectifier Diode ,# ,#  8 8     8 8    ! 3 1  3 47 89 $ :9  ' &(=8 ), &(=8 )' &(=8'( ), &(=8'( )' &(= ), &(= )' &(='( ), &(='( )' &(=

Contextual Info: C R Y J O M EUROPE Solid State Relay Filters Type 1F25 and 3F20 Typically the level may fall between that required by the dom estic EN50081-1 and industrial (EN50081-2) standards, i.e failing the requirements of the one whilst meeting those of the other. The failure

Contextual Info: SKN 3F20 power semiconductor power electronics igbt bridge rectifier diode thyristor cib rectifier ipm driver inverter converter thyristor module gleichrichter brückengleichrichter leistungselektronik Stud Diode Fast Recovery Rectifier Diode ,# ,#  8

3F20

Abstract: diode BY 028 3f-20
Contextual Info: SKN 3F20 Stud Diode Fast Recovery Rectifier Diode ,# ,#  8 8     8 8    ! 3 1  3 47 89 $ :9  ' &(=8 ), &(=8 )' &(=8'( ), &(=8'( )' &(= ), &(= )' &(='( ), &(='( )' &(=

w19b320

Contextual Info: W19B320AT/B Data Sheet 4M x 8/2M × 16 BITS 3V FLEXIBLE BANK FLASH MEMORY Table of Contents1. GENERAL DESCRIPTION . 4 2. FEATURES . 4

Contextual Info: W28J320B/T 32M 2M x 16/4M × 8 BOOT BLOCK FLASH MEMORY Table of Contents1. GENERAL DESCRIPTION. 3 2. FEATURES . 3

L323C

Contextual Info: ADVANCE INFORMATION AMDZ1 Am29DL32xC 32 Megabit 4 M x 8 -Bit/2 M x 16-Bit CMOS 3.0 Volt-only, Sim ultaneous Operation Flash Mem ory DISTINCTIVE CHARACTERISTICS ARCHITECTURAL ADVANTAGES • Simultaneous Read/Write operations — Data can be continuously read from one bank w hile

3582B

Abstract: AT49BV322D AT49BV322DT AT49BV
Contextual Info: Features • Single Voltage Read/Write Operation: 2.65V to 3.6V • Access Time – 70 ns • Sector Erase Architecture • • • • • • • • • • • • • – Sixty-three 32K Word 64K Bytes Sectors with Individual Write Lockout – Eight 4K Word (8K Bytes) Sectors with Individual Write Lockout

edi PB60

Abstract: mcl d01 display EEP12 mcl d01 6502 CPU EDI PB05 ptc x07 mcl d01 94 MARK f1e EEP15
Contextual Info: Suites 2202-7, 22/F, Tower 6, The Gateway, 9 Canton Road, Tsimshatsui, Kowloon, Hong Kong Tel 852 2123 3289 Fax (852) 2123 3393 E-mail: sales@jesstech.com HomePage: http://www.jesstech.com WT5082 V0.97 DESCRIPTION The WT5082 is a high-performance, low-cost, CMOS 8-bit single-chip micro-controller with POCSAG

F. S. TSAI

Abstract: GQ2163 3F292
Contextual Info: ISSUED DATE :2004/11/12 REVISED DATE : GQ2163 C M O S P o s i t i v e Vo l t a g e R e g u l a t o r Description The GQ2163 series of positive, linear regulators feature low quiescent current 30 A typ. with low dropout voltage, making them ideal for battery applications.

diode SKN

Abstract: SKR 50 Semikron SKR 12 semikron skn 50 Semikron SKR 20 diode skn 17/ 12 Semikron SKR 40 /12 k526 SKR+50/12 3F20
Contextual Info: VRSM VRRM Fast Recovery Rectifier Diodes IFRMS maximum values for continuous operation 41 A IFAV (sin. 180; Tcase = 85 °C) 26 A trr = 150 ns SKN 2 F 17 SKN 3 F 20 trr = 250 ns SKR 2 F 17 SKR 3 F 20 V 400 SKN 2F17/04 SKR 2F17/04 SKN 2F17/04UNF SKR 2F17/04UNF

FPT-48P-M19

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20904-2E FLASH MEMORY CMOS 32 M 4 M x 8/2 M × 16 BIT Dual Operation MBM29DL32TF/BF-70 • DESCRIPTION The MBM29DL32TF/BF are a 32 M-bit, 3.0 V-only Flash memory organized as 4 M bytes of 8 bits each or 2 M words of 16 bits each. These devices are designed to be programmed in-system with the standard system 3.0 V

M29DW323D

Abstract: TSOP48 outline M29DW323DB M29DW323DT M29DW324D M29DW324DB M29DW324DT
Contextual Info: M29DW324DT M29DW324DB 32 Mbit 4Mb x8 or 2Mb x16, Dual Bank, Boot Block 3V Supply Flash Memory PRELIMINARY DATA FEATURES SUMMARY • SUPPLY VOLTAGE – VCC = 2.7V to 3.6V for Program, Erase and Read ■ – VPP =12V for Fast Program (optional) ACCESS TIME: 70, 90ns

Contextual Info: ESMT Preliminary F49L320UA/F49L320BA 32 Mbit 4M x 8/2M x 16 3V Only CMOS Flash Memory 1. FEATURES z z z z z z z z z z - Single supply voltage 2.7V-3.6V Fast access time: 70/90 ns 4,194,304x8 / 2,097,152x16 switchable by BYTE pin Compatible with JEDEC standard

mx29lv320ttc

Abstract: MX29LV320T Q0-Q15 SA10
Contextual Info: MX29LV320T/B 32M-BIT [4M x 8 / 2M x 16] SINGLE VOLTAGE 3V ONLY FLASH MEMORY FEATURES • Low Power Consumption - Low active read current: 10mA typical at 5MHz - Low standby current: 200nA (typical) • Minimum 100,000 erase/program cycle • 10-year data retention

Contextual Info: ESMT Preliminary F49L320UA/F49L320BA 32 Mbit 4M x 8/2M x 16 3V Only CMOS Flash Memory 1. FEATURES z z z z z z z z z z - Single supply voltage 2.7V-3.6V Fast access time: 70/90 ns 4,194,304x8 / 2,097,152x16 switchable by BYTE pin Compatible with JEDEC standard

SA70

Abstract: 18FFFFH
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-50204-2E Stacked MCP Multi-Chip Package FLASH MEMORY & SRAM CMOS 32M (x 8/×16) FLASH MEMORY & 4M (× 8/×16) STATIC RAM MB84VD2218XEC-90/MB84VD2219XEC-90 MB84VD2218XEE-90/MB84VD2219XEE-90 • FEATURES • Power supply voltage of 2.7 to 3.3 V

Contextual Info: ISSI IS71VPCF32XS04 3.0 Volt-Only Flash & SRAM COMBO with Stacked Multi-Chip Package MCP — 32 Mbit Simultaneous Operation Flash Memory and 4 Mbit Static RAM MCP FEATURES • Power supply voltage 2.7V to 3.3V • High performance: PRELIMINARY INFORMATION