3EZ160 Search Results

DO15

Abstract: 3EZ11 3EZ12 3EZ13 3EZ14 3EZ15 3EZ16 3EZ200 DO-15
Contextual Info: DATA SHEET 3EZ11~3EZ200 GLASS PASSIVATED JUNCTION SILICON ZENER DIODES VOLTAGE- 11 to 200 Volts Power - 3.0 Watts DO-15 Unit: inch mm FEATURES .034(.86) .028(.71) • Built-in strain relief • Glass passivated iunction • Low inductance 1.0(25.4) MIN.

3EZ11

Abstract: 3EZ12 3EZ13 3EZ14 3EZ15 3EZ16 3EZ200
Contextual Info: 3EZ11 THRU 3EZ200 GLASS PASSIVATED JUNCTION SILICON ZENER DIODE VOLTAGE - 11 TO 200 Volts Power - 3.0 Watts DO-15 FEATURES l Low profile package l Built-in strain relief l Glass passivated junction l Low inductance l Excellent clamping capability l Typical ID less than 1 A above 11V

transistor mosfet buv18a

Abstract: M143206EVK MMBF4856 lm358 IC 68hc05sc24 telephone line interface circuit bc517 MC68B54 XC68HC705P9 MPX100ap BUV18A
Contextual Info: Device Index and Subject Index In Brief . . . Page Device Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.1–1 General Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.2–1 Subject Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.2–9

BC548 TRANSISTOR REPLACEMENT

Abstract: TYN612 pin diagram 1n4007 smd, toshiba S0817MH TYN604 scr pin diagram kmz51 compass TRANSISTOR S1A 64 smd toshiba l 300 laptop motherboard circuit diagram JFET TRANSISTOR REPLACEMENT GUIDE j201 replacements for transistor NEC D 587
Contextual Info: 5.2 5.4 5.46 5.124 5.130 5.130 5.140 5.180 Introduction Diodes & Rectifiers Transistors Triacs,Thyristors and Diacs Sensors Cross Reference General Application discretes Cross Reference Power discretes Cross Reference RF discretes Discrete Components 5.1 Introduction

3EZ19D5

Abstract: 3EZ10D5 3EZ11D5 3EZ12D5 3EZ13D5 3EZ14D5 3EZ17D5 3EZ18D5 3EZ20D5 3EZ22D5
Contextual Info: JGD 3EZ3.9D5 O thru 3EZ200D5 3W SILICON ZENER DIODE VOLTAGE RANG 3.9 to 200 Volts FEATURES DO-41 * Zener voltage 3. 9V to 200V * High surge current rating * 3 Watts dissipation in a normally 1 watt package MECHANICAL CHARACTERISTICS * CASE:Molded encapsulation,axial lead package.

718 mx diode

Abstract: 3 Watt Zener Diode 3EZ10D5 3EZ11D5 3EZ12D5 3EZ13D5 3EZ14D5 3EZ15D5 3EZ17D5 3EZ18D5
Contextual Info: niCROSEMI CORP b i i s a b s o o o n m Mt,i • n s c STE D 3 E Z 3 .9 D 5 thru 3 EZ 2 0 0 D 5 Microsemi Corp. f r tm ih SA STA A SC O TTSD A LE. Á7. F o r m o re m fo rm a iio n imII: <6021941 6?<M SILICON 3 WATT ZENER DIODE FEATURES • ZENER VOLTAGE 3 .9V to 200 V

d002at

Abstract: 3ez6
Contextual Info: WILLAS FM120-M+ THRU FM1200-M+ 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V ZENER 3WSOD-123+ SERIES PACKAGE Pb Free Product Package outline Features 3EZ process design, excellent power dissipation offers • BatchSeries better reverse leakage current and thermal resistance.

Contextual Info: 3EZ3.3D5 – 3EZ200D5 3.0W ZENER DIODE WON-TOP ELECTRONICS Pb Features  Glass Passivated Die Construction       3.0W Power Dissipation 3.3V – 200V Nominal Zener Voltage 5% Standard Vz Tolerance Low Inductance For Use in Voltage Regulator or Reference

motorola ZENER diode marking code

Contextual Info: M O T OR OLA SC IME D | b3fc725S G o a o t m DI ODE S/ OP TO 5 I Order this data sheet by 3EZ3.9D5/D MOTOROLA SEM ICONDUCTOR T-ÍI-J5" TECHNICAL DATA 3EZ3.9D 5 thru Designer's Data Sheet 3EZ400D 5 3-Watt Surm etic 30 Silico n Zener Diodes 3-WATT ZENER REGULATOR

3W ZENER

Contextual Info: 3EZxxxD5 SERIES 3W Zener Diodes .034 0.9 DIA. .028 (0.7) 1.0 (25.4) MIN. .300 (7.6) .230 (5.8) .140 (3.6) DIA. .104 (2.6) PRIMARY CHARACTERISTICS 1.0 (25.4) MIN. VRRM 6.2~200V TJ max 150°C DO-15 Dimensions in inches and (millimeters) Features Mechanical Data

3EZ10

Abstract: 3EZ11 3EZ12 3EZ13 3EZ15 3EZ200 DO-204AC
Contextual Info: 3EZ1 . 3EZ200 3 W 3EZ1 . 3EZ200 (3 W) Silicon-Power-Zener Diodes (non-planar technology) Silizium-Leistungs-Zener-Dioden (flächendiffundierte Dioden) Version 2008-08-14 Maximum power dissipation Maximale Verlustleistung ±0.05 Nominal Z-voltage Nominale Z-Spannung

1D10

Abstract: 7D10 9D10
Contextual Info: Certificate TH97/10561QM 3EZ3.9D10 Series Certificate TW00/17276EM SILICON ZENER DIODES DO - 41 VZ : 3.9 - 400 Volts PD : 3 Watts FEATURES : * Complete Voltage Range 3.9 to 400 Volts * High peak reverse power dissipation * High reliability * Low leakage current

3EZ10D5

Abstract: 3EZ11D5 3EZ12D5 3EZ13D5 3EZ14D5
Contextual Info: Certificate TH97/10561QM 3EZ3.9D5 Series Certificate TW00/17276EM SILICON ZENER DIODES DO - 41 VZ : 3.9 - 400 Volts PD : 3 Watts FEATURES : * Complete Voltage Range 3.9 to 400 Volts * High peak reverse power dissipation * High reliability * Low leakage current

Contextual Info: 3EZ Series SILICON ZENER DIODES DO - 41 VZ : 3.9 - 400 Volts PD : 3 Watts FEATURES : * * * * Complete Voltage Range 3.9 to 400 Volts High peak reverse power dissipation High reliability Low leakage current 1.00 25.4 MIN. 0.107 (2.7) 0.080 (2.0) 0.205 (5.2)

3EZ10D5

Abstract: 3EZ11D5 3EZ12D5 3EZ13D5 3EZ14D5 3EZ15D5 3EZ16D5 3EZ17D5
Contextual Info: 3EZ Series SILICON ZENER DIODES VZ : 3.9 - 400 Volts PD : 3 Watts DO - 41 FEATURES : * Complete Voltage Range 3.9 to 400 Volts * High peak reverse power dissipation * High reliability * Low leakage current 1.00 25.4 MIN. 0.107 (2.7) 0.080 (2.0) 0.205 (5.2)

3EZ12D10

Abstract: 1D10 7D10 8D10 9D10
Contextual Info: 3EZ3.9D10 Series SILICON ZENER DIODES DO - 41 VZ : 3.9 - 400 Volts PD : 3 Watts FEATURES : * Complete Voltage Range 3.9 to 400 Volts * High peak reverse power dissipation * High reliability * Low leakage current * Pb / RoHS Free 1.00 25.4 MIN. 0.107 (2.7)

3ez160

Contextual Info: MCC 3EZ11 THRU 3EZ200
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features 3 W Glass Passivated l Low Profile Package l Built-in Strain Relief l Glass Passivated Junction l Low Inductance

3EZ4.3D10

Abstract: 1D10 7D10 9D10
Contextual Info: Certificate TH97/10561QM 3EZ3.9D10 Series Certificate TW00/17276EM SILICON ZENER DIODES DO - 41 VZ : 3.9 - 400 Volts PD : 3 Watts FEATURES : * Complete Voltage Range 3.9 to 400 Volts * High peak reverse power dissipation * High reliability * Low leakage current

3EZ10D5

Abstract: 3EZ11D5 3EZ12D5 3EZ13D5 3EZ14D5
Contextual Info: Certificate TH97/10561QM 3EZ3.9D5 Series Certificate TW00/17276EM SILICON ZENER DIODES DO - 41 VZ : 3.9 - 400 Volts PD : 3 Watts FEATURES : * Complete Voltage Range 3.9 to 400 Volts * High peak reverse power dissipation * High reliability * Low leakage current

3EZ10

Abstract: 3EZ11 3EZ12 3EZ13 3EZ15 3EZ16 3EZ18 3EZ20 3EZ200
Contextual Info: BL GALAXY ELECTRICAL 3EZ1 - 3EZ200 Vz RANGE: 1.0, 3.9 - 200V POWER DISSIPATION: 3.0 W ZENER DIODES FEATURES For us e in s tabilizing and clipping curcuits with high DO - 15 power rating. The zener voltages are graded according to the international E 12 s tandard. Sm aller voltage tolerances

Contextual Info: 3EZ3.9D5 thru 3EZ200D5 Microsemi Corp. The a<cae e*p¡?rr.s SCOTTSDALE, AZ F o r m o re in fo rm a tio n call: 602 941-6300 FEATURES . SILICON 3 WATT ZEN ER DIODE ZENER VOLTAGE 3 .9 V to 200V • HIGH SURGE CURRENT RATIN G • 3 W ATTS DISSIPATIO N IN A NORM ALLY 1 W A TT PACKAGE

TSP160C

Abstract: ER1602CT 727 thyristor uf1002ct PANJIT ER306 1N4004 SOD-123 272 zk thyristor mw 137 600g pg2010 D804C
Contextual Info: TABLE OF CONTENT THYRISTOR SURGE PROTECTION DEVICE • 50Amp 10/1000 µs Thyristor Surge Protection Device . Page 02 • 80Amp 10/1000 µs Thyristor Surge Protection Device . Page 04

Contextual Info: 3EZ1 … 3EZ200 3 W Silizium-Leistungs-Z-Dioden (flächendiffundierte Dioden) Silicon-Power-Z-Diodes (non-planar technology) Version 2004-10-01 Maximum power dissipation Maximale Verlustleistung ±0.05 Nominal Z-voltage Nominale Z-Spannung 1…200 V Plastic case

sz5515

Contextual Info: Zener Diodes 3W Type No. Axial Lead 3EZ3.9D5 3EZ4.3D5 3EZ4.7D5 3EZ5.1D5 3EZ5.6D5 3EZ6.2D5 3EZ6.8D5 3EZ7.5D5 3EZ8.2D5 3EZ9.1D5 3EZ10D5 3EZ11D5 3EZ12D5 3EZ13D5 3EZ14D5 3EZ15D5 3EZ16D5 3EZ17D5 3EZ18D5 3EZ19D5 3EZ20D5 3EZ22D5 3EZ24D5 3EZ27D5 3EZ28D5 3EZ30D5 3EZ33D5