3D227 Search Results

Contextual Info: HCS157MS H A R R IS æ S E M I C O N D U C T O R Radiation Hardened Quad 2-Input Multiplexers September 1995 Features • Pinouts 3 Micron Radiation Hardened CMOS SOS 16 LEAD CERAMIC DUAL-IN-LINE METAL SEAL PACKAGE SBDIP MIL-STD-1835 CDIP2-T16, LEAD FINISH C

Contextual Info: f f i H A R R I S H S E M I C O N D U C T O R - 1 8 4 R H Rad-Hard 16 Channel CMOS Analog Multiplexer with High-Z Analog Input Protection March 1995 Features • S Pinouts Radiation Environment - Gamma Rate Y 1 x 10s RAD(Si)/s - Gamma Dose (y) 2 x 10s RAD(Si)

3D227

Abstract: 750E3
Contextual Info: M302271 0D55S3U 34H « H A S H IP 5060 HARRIS S E M I C O N D U C T O R M M Ê Ë Power Control 1C Single Chip Power Supply April 1994 Features Description • Single Chip Current Mode Control 1C The HIP5060 is a complete power control IC, incorporating both the high

ED 260

Abstract: "ed 260" A4811 595D154X0050T2T E&C 15mF 535BAAC-A 115 ped st 1000 3D226 3d104
Contextual Info: TYPE 29 3D So lid Ta nt a lu m ChipCa p a c it o r s TANTAM O U NT¨ , Co m m er c ia l, Su r fa c e M o u nt FEATURES ¥ M o ld ed c a se a va ila b le in five c a se c o d es. ¥ Co m pa t ib le w it h "H ig h Vo lu m e" a u t o m a t ic pic k a nd pla c e eq u ipm ent .

CD54HCT4543

Abstract: CD54HC4543
Contextual Info: 3 7E . . 4302271 Q 0 2 b □ S b A M H A S _ High-Rellabillty High-Speed CM OS LogicICs CD54HC4538/3A HARRIS SEMICOND SECTOR CD54HCT4538/3A S w i t c h i n g S p 6 d Limits with black dots W a re tested 100%. SWITCHING CHARACTERISTICS (CL = 50 pF, Input t„ t, = 6 ns)

Contextual Info: HFA3624 HARRIS S E M I C O N D U C T O R 2.4GHz Up/Down Converter August 1996 Features • Description Complete Receive/Transmit Front End The Harris 2.4GHz PRISM chip set is a highly integrated fivechip solution for RF modems employing Direct Sequence

090Q

Abstract: AN9321 HUF76407DK8 HUF76407DK8T MS-012AA TB334 BCW25
Contextual Info: in ter« ! HUF76407DK8 D ata S h e e t O c t o b e r 199 9 F ile N u m b e r 4 7 1 2 .4 3.5A, 60V, 0.105 Ohm, Dual N-Channel, Logic Level UltraFET Power MOSFET Packaging Features JEDEC MS-012AA • Ultra Low On-Resistance - rDS ON = 0.0900, VGS = 10V BRANDING DASH

TI-392

Abstract: BD231 BD227 BD231-10
Contextual Info: BD227 BD229 BD231 SILICON PLANAR EPITAXIAL POWER TRANSISTORS G eneral p u rp o s e p n p tra n s is to rs in a S O T -3 2 p la s tic pa cka g e e sp e cia lly re co m m e n d e d fo r te le v is io n c irc u its . T h e ir c o m p le m e n ts are B D 2 2 6 , B D 2 2 8 and B D 2 3 0 .

Contextual Info: HARRIS SEMICOND SECTOR f f i H V IV S E M I C O N D U C T O R A R R I S M bE D C D • M 3 0 5 E7 1 □D3fl3Qb T ■ HAS P 1 8 0 2 A , C D P 1 8 0 2 A C , 7 _ C January 1992 D P 1 8 0 2 B C C M O S 8 B it M ic r o p r o c e s s o r s Features Description • Input Clock Maximum Frequency Options:

15n05

Abstract: RFP15N06
Contextual Info: 4302H71 £ j H a 0054307 r r i • s HAS R F R F M 1 5 N 0 5 / 1 5 N 0 6 P 1 5 N 0 5 / 1 5 N 0 6 N-Channel Enhancement Mode Power Field Effect Transistors May 1992 Packages Features T O -20 4 A A BOTTOM VIEW • 15A , 5 0 V and 6 0 V • rD S o n = 0 . 1 4 n