3CIA Search Results

Contextual Info: MOTOROLA Order this document by MTP71040L/D SEMICONDUCTOR TECHNICAL DATA Advance Information M TP71040L TMOS E-FET High Energy Pow er FET N-Channel Enhancement-Mode Silicon Gate TMOS POWER FET 60 AMPERES 100 VOLTS RDS on = 0-022 Q This advanced TM O S E -F E T is designed to w ithstand high

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Abstract: BOJH CMIC
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Contextual Info: MOTOROLA Order this document by MTB71040L/D SEMICONDUCTOR TECHNICAL DATA Advance Information TMOS E-FET High Energy Pow er FET D2PAK for S u rface Mount TMOS POWER FET 60 AMPERES 100 VOLTS RDS on = 0-022 Q N-Channel Enhancement-Mode Silicon Gate The D2 PAK package has the capability of housing a larger die

LW-LCD TV

Abstract: 69 lvb p38a CODE EFI .ASM rjz ah TI7C DSI LCD TFT fci hm1 FPI 3I 131cc 0297-f
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Contextual Info: 1881 1881-2* TERMINAL SHOWN 16-24 AWG SEE SHEET 2 FOR 1881-3* TERMINAL SEE SHEET 3 FOR 1881-4* TERMINAL S SECTIO N C-C 1 1881 c -«-1 •M2±.0O3 (3 .6 H 0 .0 8 ) OB SO LETE P / N U C R 2 0 0 2 -0 2 7 0 COMERCI 0 1 / 9 / 2 8 ADDED -1 1 0 5 ,-1 1 0 6

Contextual Info: MITSUBISHI Nch POWER MOSFET f FS30VSH-2 | HIGH-SPEED SWITCHING USE FS30VSH-2 OUTLINE DRAWING Dimensions in mm ,c 4.5 a -34- • 2.5V DRIVE • VD S S . •100V • rDS ON (MAX) . -