3B150 Search Results

3B150W-3F

Contextual Info: up to 4 GHz ATTENUATORS SMA 150 W atts CO RPORATION An MCE Company Sc X B 1 5 0 W - X X M 3 150W -X X F Custom Mtg. hole Config. may be Added to this SPECIFICATIONS: Electrical: Frequency Range _ DC - 4.0 GHz Standard Freq. Values _1.5, 3 & 4 GHz

3B149

Contextual Info: SSI 32R2532R ¿ m m M tm +5V, 8-Channel Thin Film Read/Write Device * A TDK Group/Company Advance Information January 1996 DESCRIPTION FEATURES The SSI 32R2532R is a BiCMOS monolithic integrated circuit designed for use with two-terminal recording heads. It provides a low noise read amplifier, write

Contextual Info: SSI 32R2532R mmsvsbns* +5V, 8-Channel Thin Film Read/Write Device A TDK Group/Company Advance Information January 1996 DESCRIPTION FEATURES The SSI 32R2532R is a BiCMOS monolithic integrated circuit designed for use with two-terminal recording heads. It provides a low noise read amplifier, write

3B27V

Abstract: 3B16V 3B-22 SMB3EZ150 3B91V 3B130V 3B11V ma121
Contextual Info: SMB3EZxx SERIES Surface Mount Device 0.086 2.20 0.077 (1.95) 0.155 (3.94) 0.130 (3.30) 0.180 (4.57) 0.160 (4.06) 0.012 (0.305) 0.006 (0.152) PRIMARY CHARACTERISTICS 0.096 (2.44) 0.084 (2.13) 0.060 (1.52) 0.030 (0.76) 6.2~200V VRRM 0.008 (0.203) Max. VF 1.5V

RCA SK CROSS-REFERENCE

Abstract: CD4003 2N2505 TF408 1N4465 250PA120 2N3017 pt 3570 trw rf pa189 Semicon volume 1
Contextual Info: 1969 o < 00 x ic e uo <r\ *—4 rO O CM u J 'r < o o o CO r aJ. rfrr.~> y -< z X— < P“ -J Sem iconductor Annual At .0008" Dia. . . . there is no second source phire orifice insert. Tempress also created and supplied the tungsten carbide ultrasonic bonding tool and pioneered