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    3B138 Search Results

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    Shenzhen Sctf Electronics Co Ltd SX3B13.824F0810F30

    CRYSTAL 13.8240MHz 8pF SMD
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    DigiKey SX3B13.824F0810F30 Tape & Reel 72,000 10
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    • 100 $0.16
    • 1000 $0.07
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    Abracon Corporation ABM3B-13.824MHZ-B2-T

    CRYSTAL 13.8240MHZ 18PF SMD
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    DigiKey () ABM3B-13.824MHZ-B2-T Digi-Reel 1,000 1
    • 1 $0.79
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    ABM3B-13.824MHZ-B2-T Tape & Reel 1,000 1,000
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    ABM3B-13.824MHZ-B2-T Cut Tape 1,000 1
    • 1 $0.79
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    Avnet Americas ABM3B-13.824MHZ-B2-T Tape & Reel 12 Weeks 1,000
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    Newark ABM3B-13.824MHZ-B2-T Cut Tape 1,000
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    Rochester Electronics ABM3B-13.824MHZ-B2-T 16,000 1
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    Avnet Abacus ABM3B-13.824MHZ-B2-T Tape & Reel 14 Weeks 1,000
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    Braemac Americas-Symmetry ABM3B-13.824MHZ-B2-T 1
    • 1 $0.35
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    Anatech Electronics Inc AM763B1389

    CER FILTER 763MHZ BAND PASS
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    DigiKey AM763B1389 Bulk 105 10
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    Anatech Electronics Inc AM793B1383

    CER FILTER 793MHZ BAND PASS
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    DigiKey AM793B1383 Bulk 100 10
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    Anatech Electronics Inc AM763B1384

    CER FILTER 763MHZ BAND PASS
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    DigiKey AM763B1384 Bulk 100 10
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    3B138 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    2531b

    Abstract: 32r2512r
    Contextual Info: SSI 32R2512R ¿¡tmsifskms' +5V, 4-Channel Thin Film Read/Write Device A TDK Group/Company Advance Information January 1996 DESCRIPTION FEATURES The SSI 32R2512R is a BiCMOS monolithic integrated circuit designed for use with two-terminal recording heads. It provides a low noise read amplifier, write


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    32R2512R 32R2512R 3B-145 02531b5 2531b PDF

    32R2512

    Abstract: 3B138
    Contextual Info: SSI 32R2512R cmmsiéans' +5V, 4-Channel Thin Film Read/Write Device A TD K G ro u p / [C C iom pany Advance Information January 1996 FEATURES DESCRIPTION The SSI 32R2512R is a BiCMOS monolithic integrated circuit designed for use with two-terminal recording


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    32R2512R 32R2512R 3B-145 32R2512 3B138 PDF

    Keithley s900

    Abstract: n4212 Keithley 7700 N4050 3B103 3B159 N 4212 transistor N4212 RT9602 BdP 285
    Contextual Info: DATE D’ORIGINE DATE ORIGINATED AUTEUR/ORIGINATOR: RT96-024 MARCH 22 1996 SEMICONDUCTOR OBJECT/SUBJECT: NUMÉRO DE RAPPORT REPORT NUMBER PAGE / SHEET 1 de/ of 80 Final Electrical Parameter Capability and Design Rule Evaluation of the 1.2 µm N-Well Single Poly Double Metal Process.


    Original
    RT96-024 enviro1995, Keithley s900 n4212 Keithley 7700 N4050 3B103 3B159 N 4212 transistor N4212 RT9602 BdP 285 PDF