3B SOT23 Search Results

FMMT918

Abstract: "vhf,uhf transistor" DSA003702
Contextual Info: SOT23 NPN SILICON PLANAR VHF/UHF TRANSISTOR FMMT918 ISSUE 2 – JANUARY 1996 PARTMARKING DETAILS – 3B E C B SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage VCBO 30 V Collector-Emitter Voltage VCEO 15 V Emitter-Base Voltage

Contextual Info: SOT23 NPN SILICON PLANAR VHF/UHF TRANSISTOR ISSUE 2 - JANUARY 1996_ PARTMARKING D E T A ILS - 3B SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Collector-Base Voltage V VALUE UNIT cbo 30 V Collector-Emitter Voltage V CEO 15 V Emitter-Base Voltage

Marking Code 2X

Contextual Info: MMBT4401 NPN General Purpose Transistor FEATURES • For switching and amplifier applications. • Complementary PNP Type Available MMBT4403 • ESD Capability: Machine Model, C (> 400 V) Human Body Model, 3B ( > 8 kV ) MECHANICAL DATA • Case: SOT-23 Plastic

SMD TRANSISTOR MARKING 3B

Abstract: cmbt918
Contextual Info: Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company SOT-23 Formed SMD Package CMBT918 VHF/UHF TRANSISTOR N–P–N transistor Marking CMBT918 = 3B PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm Pin configuration 1 = BASE 2 = EMITTER

SMD TRANSISTOR MARKING 3B

Abstract: cmbt918 transistor smd marking JT
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package CMBT918 VHF/UHF TRANSISTOR N–P–N transistor Marking CMBT918 = 3B PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm Pin configuration 1 = BASE

BC856

Abstract: BC856A BC856B BC857 BC857A BC857B BC857C BC858 BC858A BC858B
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package BC856 BC857 BC858 SILICON PLANAR EPITAXIAL TRANSISTORS P–N–P transistors Marking BC856 = 3D BC856A = 3A BC856B = 3B BC857 = 3H BC857A = 3E

Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package BC856 BC857 BC858 SILICON PLANAR EPITAXIAL TRANSISTORS P–N–P transisto rs Marking BC856 = 3D BC856A = 3A BC856B = 3B BC857 = 3H BC857A = 3E

ts 4141 TRANSISTOR smd

Abstract: CMBT918 transistor marking SA p sot-23 c120 equivalent SMD TRANSISTOR MARKING 3B
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package CMBT918 VHF/UHF TRANSISTOR N–P–N transistor Marking CMBT918 = 3B Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 3 1 2 ABSOLUTE MAXIMUM RATINGS

Contextual Info: DB3X201K Silicon epitaxial planar type Unit: mm For high frequency rectification • Features  Small reverse current IR  Low forward voltage VF  Halogen-free / RoHS compliant EU RoHS / UL-94 V-0 / MSL: Level 1 compliant  Marking Symbol: 3B  Packaging

Contextual Info: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited IS / IECQC 700000 IS / IECQC 750100 An IS/ISO 9002 and IECQ Certified Manufacturer SOT-23 Formed SMD Package CMBT918 VHF/UHF TRANSISTOR N–P–N transistor Marking CMBT918 = 3B PACKAGE OUTLINE DETAILS

Contextual Info: SOT23 NPN SILICON PLANAR VHF/UHF TRANSISTOR ISSU E 2 - JANUARY 1996_ P A R T M A R K IN G D E T A IL S - 3B ABSOLUTE M A X IM U M RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage SY M B O L VALUE UNIT V CBO 30 V V CEO 15 V

Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package CMBT918 VHF/ UHF TRANSISTOR N–P–N transisto r Marking CMBT918 = 3B Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 3 1 2 ABSOLUTE MAXIMUM RATINGS

Contextual Info: PN918 / MMBT918 MMBT918 PN918 C E C B TO-92 B SOT-23 E Mark: 3B NPN RF Transistor This device is designed for use as RF amplifiers, oscillators and multipliers with collector currents in the 1.0 mA to 30 mA range. Sourced from Process 43. Absolute Maximum Ratings*

PN918

Abstract: MMBT918 mark 3b RF TRANSISTOR SOT23 5 P431 PN918 transistor
Contextual Info: MMBT918 PN918 C E C B TO-92 SOT-23 E B Mark: 3B NPN RF Transistor This device is designed for use as RF amplifiers, oscillators and multipliers with collector currents in the 1.0 mA to 30 mA range. Sourced from Process 43. Absolute Maximum Ratings* Symbol

marking B2

Abstract: top marking B4 sot23
Contextual Info: MOTORO LA SC -CDIODES/OPTO} :f 6367255 M O TO RO LA SC 34 CE |b 3b ?5 SS 003flSfl0 1 |~~ 34 C D IO D E S / O P T O 38280 D T -ir - 0? SOT23 (continued) MMBC1621 B2,3,4 DEVICE NO. SMALL-SIGNAL NPN TRANSISTORS TOP VIEW C I I nr • Designed for high-speed switching applications.

Contextual Info: PN918 / MMBT918 MMBT918 PN918 C E C B TO-92 B SOT-23 E Mark: 3B NPN RF Transistor This device is designed for use as RF amplifiers, oscillators and multipliers with collector currents in the 1.0 mA to 30 mA range. Sourced from Process 43. Absolute Maximum Ratings*

CBVK741B019

Abstract: F63TNR MMBT918 PN2222N PN918 RF 107 transistor tc 144
Contextual Info: PN918 / MMBT918 MMBT918 PN918 C E C B TO-92 B SOT-23 E Mark: 3B NPN RF Transistor This device is designed for use as RF amplifiers, oscillators and multipliers with collector currents in the 1.0 mA to 30 mA range. Sourced from Process 43. Absolute Maximum Ratings*

mmbt918

Abstract: PN918 Intermediate frequency Semiconductor RF CBVK741B019 F63TNR PN2222N npn transistor wc 14inch
Contextual Info: PN918 / MMBT918 MMBT918 PN918 C E C B TO-92 B SOT-23 E Mark: 3B NPN RF Transistor This device is designed for use as RF amplifiers, oscillators and multipliers with collector currents in the 1.0 mA to 30 mA range. Sourced from Process 43. Absolute Maximum Ratings*

Vishay diodes code marking

Abstract: marking code vishay label VISHAY MARKING CODE Vishay SOT23 MARKING F5 Vishay DaTE CODE marking code vishay MARKING CODE f5 SOD-523 DO-219AB marking CODE n5 marking l4 sot-23
Contextual Info: VISHAY Vishay Semiconductors Marking of Diodes View from top View from top R9 F5 Date code: R = Year 9 = Month Type code Cathode band Type code Pin 1 18919 18904 Figure 4. SOD-323 Figure 1. LLP75-3A, LLP75-3B FC View from top N5 H3 Cathode Date code: N = Year

sot-23 Marking 3D

Abstract: BC856 sot-23 MARKING CODE 3d 3D marking sot23 3H SOT23 BC856B SOT23 BC856A BC856B BC857 BC858
Contextual Info: PNP General Purpose Transistor: BC856/857/858 Features: t
Low current max.100mA t
Low voltage (max.65v) Applications: t
SOT-23 Ordering Information Type No. Marking: Package Code: BC856A/B 3D/3A/3B SOT-23 BC857A/B/C 3H/3E/3F/3G SOT-23 BC858A/B/C 3J/3K/3L

F5 marking code

Abstract: MARKING CODE f5 marking code vishay label SMF DO-219AB Vishay diodes code marking Vishay DaTE CODE DO-219AB marking L4 SOD123 SOD-523 DO-219AB SOD-80 sod123
Contextual Info: Vishay Semiconductors Marking of Diodes View from top View from top R9 F5 Date code: R = Year 9 = Month Type code Cathode band Type code Pin 1 18919 Figure 4. SOD-323 18904 Figure 1. LLP75-3A, LLP75-3B FC View from top N5 H3 Cathode Date code: N = Year 5 = Month

Contextual Info: Discrete POWER & Signal Technologies S iM IC D N P U C T O B MMBT918 PN918 C < \' TO-92 SOT-23 BE B Mark: 3B NPN RF Transistor This device is designed for use as RF amplifiers, oscillators and multipliers with collector currents in the 1.0 mA to 30 mA range.

U92 QUANTA

Abstract: South Bridge ALI M1535 varta D45 R1019 FM ic B201212K800 DL521 quanta quanta computer quanta u92 U92 QUANTA REV:D
Contextual Info: 5 4 3 2 1 Model MODEL REV PM1 M/B BOARD 1A 2A D 3A CHANGE LIST Page First Release reference ECN E200210-0300 reference ECN E200211-0666 reference ECN E200211-1777 3B 3C reference ECN E200212-1903 reference ECN E200301-0426 C B PM1 M/B BOARD FM 1 1A 2 1A 3

MMBT918

Contextual Info: i, Una. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 PN918 MMBT918 TO-92 SOT-23 Mark: 3B NPN RF Transistor This device is designed for use as RF amplifiers, oscillators and multipliers with collector currents in the 1.0 mA to 30 mA range.