3A DIODE GREEN Search Results

AN1149

Abstract: P N Junction diode
Contextual Info: application brief AB20 3A replaces AN1149 3A Advanced Electrical Design Models Table of Contents Diode Equation Forward Voltage Model 2 Derivation of Diode Model 2 Calculation of Diode Model Parameters 2 “Worst case” Diode Models 3 Advanced Thermal Modeling Equations

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD SB3U40 Preliminary DIODE 3A SCHOTTKY BARRIER RECTIFIER  DESCRIPTION + The UTC SB3U40 is a 3.0A schottky barrier rectifier, it uses UTC’s advanced technology to provide the customers with sort, fast switching capability and low forward voltage

Contextual Info: A Product Line of Diodes Incorporated ZXTPS720MC 40V PNP LOW SATURATION TRANSISTOR AND 40V, 1A SCHOTTKY DIODE COMBINATION Features and Benefits Mechanical Data PNP Transistor • BVCEO > -40V • IC = -3A Continuous Collector Current • Low Saturation Voltage -220mV max @ -1A

Schottky Diode 50V 3A

Abstract: AO3701L AO3701
Contextual Info: AO3701 P-Channel Enhancement Mode Field Effect Transistor with Schottky Diode General Description Features VDS V = -20V ID = -3A (VGS = -10V) RDS(ON) < 80mΩ (VGS = -10V) RDS(ON) < 100mΩ (VGS = -4.5V) RDS(ON) < 145mΩ (VGS = -2.5V) ESD Rating: 2000V HBM

FDFS2P753Z

Contextual Info: FDFS2P753Z tm Integrated P-Channel PowerTrench MOSFET and Schottky Diode -30V, -3A, 115mΩ Features General Description „ Max rDS on = 115mΩ at VGS = -10V, ID = -3.0A The FDFS2P753Z combines the exceptional performance of Fairchild's PowerTrench MOSFET technology with a very low

Contextual Info: FDFS2P753Z tm Integrated P-Channel PowerTrench MOSFET and Schottky Diode -30V, -3A, 115mΩ Features General Description ̈ Max rDS on = 115mΩ at VGS = -10V, ID = -3.0A The FDFS2P753Z combines the exceptional performance of Fairchild's PowerTrench MOSFET technology with a very low

FDFS2P753AZ

Abstract: 3a ultra fast diode
Contextual Info: FDFS2P753AZ tm Integrated P-Channel PowerTrench MOSFET and Schottky Diode -30V, -3A, 115mΩ Features General Description „ Max rDS on = 115mΩ at VGS = -10V, ID = -3.0A The FDFS2P753AZ offers a single package solution for DC/DC conversion. It combines an excellent Fairchild’s PowerTrench

FDFS2P753AZ

Contextual Info: FDFS2P753AZ tm Integrated P-Channel PowerTrench MOSFET and Schottky Diode -30V, -3A, 115mΩ Features General Description „ Max rDS on = 115mΩ at VGS = -10V, ID = -3.0A The FDFS2P753AZ offers a single package solution for DC/DC conversion. It combines an excellent Fairchild’s PowerTrench

LTspice

Abstract: Acbel schematic diagram switching power supply NTC 15K LT8582 LT3786 XAL6060-472ML High Current Battery Charger adapter battery hp 19V Sanyo supercapacitors LTC3115-1
Contextual Info: April 2012 I N T H I S I S S U E 2.5MHz, dual monolithic supply with integrated 3A power switches 12 digital power manager sequences any number of supplies 28 dual monolithic ideal diode extends battery life 34 supercapacitor-based power supply backup 36 µModule DC/DC converter

APM2802CG

Abstract: APM2802
Contextual Info: APM2802CG N-Channel Enhancement Mode MOSFET with Schottky Diode Features Pin Description MOSFET D NC • C 20V/3A, G RDS ON =50mΩ(typ.) @ VGS=4.5V S RDS(ON)=80mΩ(typ.) @ VGS=2.5V • • • A Super High Dense Cell Design Top View of JSOT-6 Reliable and Rugged

ND30

Abstract: ND3000 ND3048 ND3049 ND3050 power varactor varactor diode high frequency GHz
Contextual Info: NEC/ CALIFORNIA 1SE D SEC b427414 Q00n02 / - 07-/9 T ND3000 SERIES S TO K-BAND G aAs VARACTOR DIODE OUTLINE DIMENSIONS FEATURES • HIGH C U T O F F FR EQ U EN CY; fc-6 = 250 G Hz ND3048 fc-6 = 270 GHz ND3138 1 (Units In mm) OUTLINE 3A «- 4.0 MIN.

ND3000

Abstract: ND3138 3A ND3048 ND3049 ND3050 3A diode green T 3D 24 DIODE varactor diode high frequency GHz
Contextual Info: NEC/ CALIFORNIA 1SE D NEC b427414 Q00n02 T ND3000 SERIES S TO K-BAND G aAs VARACTOR DIODE OUTLINE DIMENSIONS FEATURES • H IG H C U T O F F F R E Q U E N C Y ; fc -6 = 250 G H z ND3048 fc -6 = 270 G H z ND3138 1 (Units In mm) OUTLINE 3A «- 4.0 MIN.

1S1948

Abstract: 1S2063 V03J
Contextual Info: 4496205 H I T A C H I / OPTOELECTRONICS V03 • —iSSaiEffl U3 > 5' -f % 6 8C 0 9 7 9 4 o T - ö l - 1 3 — K (General-Use Rectifier Diode) bñ VRRM : 2 0 0 V -8 0 0 V DE I ^ M T L S D S OOOTTTM 0 O ' f (AV) : 1 -3A 62M IN -(2 .4 4 )5 .0M A X "2 9 M IN -+ ^ o .2 H ^ 2 9 M I N - <1-1 4 >

STS6308

Contextual Info: STS6308 Green Product S a mHop Microelectronics C orp. Ver 1.0 N-Channel Enhancement Mode Field Effect Transistor FEATURES Super high dense cell design for low R DS ON . PRODUCT SUMMARY V DSS ID R DS(ON) (m Ω) Max Rugged and reliable. 83 @ VGS= 10V 60V Suface Mount Package.

TS-3401

Abstract: 3401ag
Contextual Info: S T S 3401 Green Product S amHop Microelectronics C orp. J un.15 2004 P -C hannel E nhancement Mode MOS FE T P R ODUC T S UMMAR Y V DS S ID -30V -3A F E AT UR E S S uper high dense cell design for low R DS ON . ( m Ω ) Max R DS (ON) R ugged and reliable.

Contextual Info: 3.5x2.8mm SURFACE MOUNT LED LAMP Part Number: AAA3528SURKZGQBDS ATTENTION Hyper Red Green Blue OBSERVE PRECAUTIONS FOR HANDLING ELECTROSTATIC DISCHARGE SENSITIVE DEVICES Features Description z Suitable for all SMT assembly and solder process. The Hyper Red source color devices are made with AlGaInP

STS3405

Contextual Info: STS3405 Green Product S a mHop Microelectronics C orp. Ver 1.1 P-Channel Enhancement Mode Field Effect Transistor PRODUCT SUMMARY V DSS ID R DS ON (m Ω) Max FEATURES Super high dense cell design for low R DS(ON). Rugged and reliable. 100 @ VGS=-10V -30V

100-10L

Contextual Info: Green Product SDP/F06N60A S a mHop Microelectronics C orp. Preliminary 600V N-Channel Planar MOSFET FEATURES PRODUCT SUMMARY V DSS ID Fast Switching. R DS ON (m Ω) Max 100% Avalanche Rated. 600V 6A G D S 1.2 @ VGS=10V,ID=3A TO-220 TO-220F G D S ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted )

td 3404

Abstract: 3404A
Contextual Info: S T S 3404 Green Product S amHop Microelectronics C orp. S ep 15 2005 N-C hannel E nhancement Mode Field E ffect Trans is tor F E AT UR E S P R ODUC T S UMMAR Y V DS S ID R DS ON S uper high dense cell design for low R DS (ON ). ( m Ω ) Max R ugged and reliable.

Contextual Info: 30mm 1.2 INCH 5x7 DOT MATRIX DISPLAY Part Number: TBC12-12SURKCGKWA Hyper Red Green Features Description z 1.2 inch matrix height. The Hyper Red source color devices are made with Al- z Dot size 3mm. GaInP on GaAs substrate Light Emitting Diode. z Low current operation.

APB3227

Contextual Info: 3.2x2.7mm SURFACE MOUNT LED LAMP Part Number: APB3227SURKCGKC Hyper Red Green Features Description z 3.2mmx2.7mm SMT LED, 1.1mm thickness. The Hyper Red source color devices are made with Al- z Bi -color, low power consumption. GaInP on GaAs substrate Light Emitting Diode.

k1507

Abstract: K1507 MOSFET transistor k1507 transistor cs 9013 Transistor 9013 AP3843GM k-1507 k1507 TRANSISTOR AZ3843 transformer ei28
Contextual Info: Application Note 1017 The Introduction to Green Mode PWM Controller AP384XG Prepared by Lv Shuzhuang System Engineering Department 1. Introduction CS pin 3 In normal operation mode, the input pin receives a voltage proportional to inductor current, and the PWM uses this information to terminate the output

Contextual Info: 1.6X1.25mm BI-COLOR SMD CHIP LED LAMP Part Number: APTB1612SURKSGC-F01 Hyper Red Super Bright Green Features Description z 1.6mmx1.25mm SMT LED, 0.65mm thickness. The Hyper Red source color devices are made with Al- z Bi-color,low power consumption. GaInP on GaAs substrate Light Emitting Diode.

Contextual Info: 3.2x2.7mm SURFACE MOUNT LED LAMP Part Number: APB3227ZGQBDC ATTENTION Green Blue OBSERVE PRECAUTIONS FOR HANDLING ELECTROSTATIC DISCHARGE SENSITIVE DEVICES Features Description z 3.2mmx2.7mm SMT LED, 1.1mm thickness. The Green source color devices are made with InGaN