3N163 Search Results

3N163

Abstract: TO72 package
Contextual Info: 3N163 P-CHANNEL MOSFET The 3N163 is an enhancement mode P-Channel Mosfet The 3N163 is an enhancement mode P-Channel Mosfet designed for use as a General Purpose amplifier or switch The hermetically sealed TO-72 package is well suited for high reliability and harsh environment applications.

Contextual Info: jre s ft 3N163 SERIES P-Channel Enhancement-Mode MOS Transistors PRODUCT SUMMARY B O T T O M VIEW TO -7 2 TO-206AF PART NUM BER V (BR|DSS 3N163 -40 250 -50 3N164 -30 300 -50 "W 1 • d (A) 1 2 3 4 Performance Curves: MRA DRAIN G ATE SUBSTR ATE, C A S E SO URCE

3N163

Abstract: 3N164 3N170
Contextual Info: G E SOLI» STATE DE|3fl7S0fil D Gli DIS 1 | DI 3875081 G E SOLID STATE 01E 11015 3N163, 3N164 3N163, 3N164 P-Channel Enhancement Mode MOSFET General Purpose Amplifier Switch FEATURES • • • • T - 3 7 - 3 5 ABSOLUTE MAXIMUMRATINGS Notei (Ta = 25°C unless otherwise noted)

electrometer

Abstract: 3N163 3N164
Contextual Info: 3N163/3N164 P-Channel Enhancement-Mode MOSFET Transistors Product Summary Part Number V BR DSS Min (V) VGS(th) (V) rDS(on) Max (W) ID(on) Min (mA) Crss Max (pF) tON Typ (ns) 3N163 –40 –2 to –5 250 –5 0.7 18 3N164 –30 –2 to –5 300 –3 0.7 18

3N164

Abstract: 3N163
Contextual Info: 3N163/3N164 P-Channel Enhancement-Mode MOSFET Transistors Product Summary Part Number V BR DSS Min (V) VGS(th) (V) rDS(on) Max (W) ID(on) Min (mA) Crss Max (pF) tON Typ (ns) 3N163 –40 –2 to –5 250 –5 0.7 18 3N164 –30 –2 to –5 300 –3 0.7 18

3N163

Abstract: 3N164
Contextual Info: 3N163/3N164 P-Channel Enhancement-Mode MOSFET Transistors Product Summary Part Number V BR DSS Min (V) VGS(th) (V) rDS(on) Max (W) ID(on) Min (mA) Crss Max (pF) tON Typ (ns) 3N163 –40 –2 to –5 250 –5 0.7 18 3N164 –30 –2 to –5 300 –3 0.7 18

3n163

Abstract: P-Channel MOSFETs
Contextual Info: Part No. 3N163-E3 P-Channel MOSFETs Single Configuration Package: TO-72 VDS (Max)(V): -70 ID (Max)(A): -30 RDS(on) Max (Ω) @ VGS=10V: 250 @ 20V PD (Max) (W): 0.375

3N163

Abstract: 3N164
Contextual Info: 3N163/164 Siliconix PĆChannel EnhancementĆMode MOS Transistors Product Summary Part Number V BR DSS Min (V) VGS(th) (V) rDS(on) Max (W) ID(on) Min (mA) Crss Max (pF) tON Typ (ns) 3N163 -40 -2 to -5 250 -5 0.7 18 3N164 -30 -2 to -5 300 -3 0.7 18 Features

3N163

Abstract: 3N164 3N170
Contextual Info: D M üm 3N163, 3N164 P-Channel Enhancem ent Mode MOS FIET FEATURES • V ery High Input Impedance • High Gate Breakdown • Fast Switching • Low Capacitance PIN CONFIGURATION CHIP TOPOGRAPHY 1503- 2! MAXIMUM RATINGS @ 2 5 °C ambient unless noted} 3 N 163

Contextual Info: 3N163. 3N164. LINEAR SYSTEMS P-CHANNEL ENHANCEMENT MODE MOSFET Linear Integrated Systems FEATURES VERY HIGH INPUT IMPEDANCE HIGH GATE BREAKDOWN ULTRA LOW LEAKAGE FAST SWITCHING LOW CAPACITANCE ABSOLUTE MAXIMUM RATINGS NOTE 1 @ 25°C (unless otherwise noted)

3N163-3N164

Contextual Info: 3N163. 3N164 LINEAR SYSTEMS P-CHANNEL ENHANCEMENT MODE MOSFET Linear Integrated Systems ABSOLUTE MAXIMUM RATINGS NOTE 1 @ 25°C (unless otherwise noted) Drain-Source or Drain-Gate Voltage 3N163 3N164 Transient G-S Voltaae (NOTE 1) Drain Current Storage Temperature

ultra low igss pA

Abstract: electrometer ultra low igss High Conductance Low Leakage Diode To-206AF 3N163 3N164
Contextual Info: 3N163/3N164 P-Channel Enhancement-Mode MOS Transistors Product Summary Part Number V BR DSS Min (V) VGS(th) (V) rDS(on) Max (W) ID(on) Min (mA) Crss Max (pF) tON Typ (ns) 3N163 –40 –2 to –5 250 –5 0.7 18 3N164 –30 –2 to –5 300 –3 0.7 18 Features

3n164

Contextual Info: TY P ES 3N163, 3N164 P-C H A N N EL EN H A N C EM EN T-T YP E IN S U L A T E D -G A T E F IE L D -E F F E C T T R A N S IS T O R S B U L L E T I N N O . D L -S 7 2 1 1 7 5 0 , J U L Y 1 9 7 2 - R E V 1 S E D N O V E M B E R 1 9 7 2 ENHANCEMENT-TYPE"!" MOS SILIC O N TRAN SISTO RS

Contextual Info: CT"Silicoriix MRA P-Channel Enhancement-Mode MOSFET in c o r p o r a te d lw l • TYPE PACKAGE DEVICE Single TO-72 T0206AF • 3N163,3N164 Single Chip • Available as MRA1CHP TYPICAL CHARACTERISTICS Output Characteristics Transfer Characteristics VDS (V)

3N163

Abstract: 3N163-64 3N164
Contextual Info: P-Channel Enhancement Mode MOSFET General Purpose Amplifier Switch 3N163/3N164 ABSOLUTE MAXIMUM RATINGS Note 1 (Ta = 25°C unless otherwise specified) FEATURES • • • • Very High Input Impedance High Gate Breakdown Fast Switching Low Capacitance Drain-Source or Drain-Gate Voltage

Contextual Info: 3N163. 3N164 LINEAR SYSTEMS P-CHANNEL ENHANCEMENT MODE MOSFET Linear Integrated Systems FEATURES VERY HIGH INPUT IMPEDANCE HIGH GATE BREAKDOWN ULTRA LOW LEAKAGE FAST SWITCHING LOW CAPACITANCE ABSOLUTE MAXIMUM RATINGS NOTE 1 @ 25°C (unless otherwise noted)

3N163

Abstract: 3N164
Contextual Info: 3N163, 3N164 P-CHANNEL ENHANCEMENT MODE MOSFET Linear Integrated Systems FEATURES VERY HIGH INPUT IMPEDANCE HIGH GATE BREAKDOWN ULTRA LOW LEAKAGE FAST SWITCHING LOW CAPACITANCE ABSOLUTE MAXIMUM RATINGS NOTE 1 @ 25°C (unless otherwise noted) Drain-Source or Drain-Gate Voltage

Contextual Info: 3N163, 3N164 P-CHANNEL ENHANCEMENT MODE MOSFET FEATURES VERY HIGH INPUT IMPEDANCE HIGH GATE BREAKDOWN ULTRA LOW LEAKAGE FAST SWITCHING LOW CAPACITANCE ABSOLUTE MAXIMUM RATINGS @ 25°C unless otherwise stated Drain-Source or Drain-Gate Voltage 3N163 -40V

3N163

Abstract: 3N164
Contextual Info: 3N163/3N164 P-Channel Enhancement-Mode MOSFET Transistors Product Summary Part Number V BR DSS Min (V) VGS(th) (V) rDS(on) Max (W) ID(on) Min (mA) Crss Max (pF) tON Typ (ns) 3N163 –40 –2 to –5 250 –5 0.7 18 3N164 –30 –2 to –5 300 –3 0.7 18

3n164 equivalent

Abstract: 3N163 3N163-64 3N164
Contextual Info: P-Channel Enhancement Mode MOSFET General Purpose Amplifier Switch CORPORATION 3N163 / 3N164 ABSOLUTE MAXIMUM RATINGS Note 1 (TA = 25oC unless otherwise specified) FEATURES • Very High Input Impedance • High Gate Breakdown Switching • Fast • Low Capacitance

3n163

Contextual Info: 3N163 Spec Sheets Details Diodes, Transistors, Thyristors, Triacs, Diod. 1 of 2 HOME | CATALOG | CART |EXPRESS CHECKOUT | PARTS WATCH | NEW ITEMS |RFQ| Home 3N163 Availability Online Store Diodes

3N163

Abstract: 3N164 3N165 3N166 3N169 3N172 3N173 3N188 3N189 3N190
Contextual Info: » M © Ï F ©Ä¥Ä[L© LOW P O W E R FIELD E FFE C T T R A N S IS T O R S Typ« Number Case Style (TO - 3N163 3N164 3N172 3N173 72 72 72 72 Igss Max (PA) Min Geometry V(Br)da* Min (V) FMP1.1 FMP1.1 FMPZ1.1 FMPZ1.1 40 30 40 30 10 10 200 200 2.0 2.0

Contextual Info: 3N163/3N164 P-Channel Enhancement-Mode MOSFET Transistors Product Summary Part Number V BR DSS Min (V) VGS(th) (V) rDS(on) Max (W) ID(on) Min (mA) Crss Max (pF) tON Typ (ns) 3N163 –40 –2 to –5 250 –5 0.7 18 3N164 –30 –2 to –5 300 –3 0.7 18

M116 CALOGIC

Contextual Info: Calogic, LLC 237 Whitney Place Fremont, CA 94539 Tel: 510-656-2900 Fax: 510-651-1076 M OSFET'S lgss V gs t h r ds( on ) cr ss P/ N ( pA( m a x ) ) ( V( m ax) ( oh m ( m a x ) ) ( pf( m a x ) ) 3N163 - 10 -5 250 .7 3N164 - 10 -5 300 .7 3N165 - 10 -5 300