3DK2222A Search Results
3DK2222A Datasheets (3)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| 3DK2222A | Jiangsu Changjiang Electronics Technology | TRANSISTOR(NPN ) | Original | 950.4KB | 3 | ||
| 3DK2222A-SOT-23 | Jiangsu Changjiang Electronics Technology | TRANSISTOR ( NPN ) | Original | 950.4KB | 3 | ||
| 3DK2222A-TO-92 | Jiangsu Changjiang Electronics Technology | TRANSISTOR(NPN ) | Original | 109.86KB | 2 |
3DK2222A Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors 3DK2222A SOT-23 TRANSISTOR NPN FEATURES y y 1. BASE Epitaxial planar die construction Complementary PNP Type available(MMBT2907A) 2.EMITTER 3.COLLECTOR MARKING: 1P1 |
Original |
OT-23 3DK2222A OT-23 MMBT2907A) -55to 150mA 500mA 100MHz | |
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Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors 3DK2222A SOT-23 TRANSISTOR NPN FEATURES y y 1. BASE Epitaxial planar die construction Complementary PNP Type available(MMBT2907A) 2.EMITTER 3.COLLECTOR MARKING: 1P1 |
Original |
OT-23 3DK2222A OT-23 MMBT2907A) -55to 150mA 500mA 100MHz | |
3DK2222AContextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 3DK2222A Plastic-Encapsulate Transistors TO-92 TRANSISTOR NPN 1. EMITTER FEATURES z Epitaxial planar die construction 2. BASE 3. COLLECTOR MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter |
Original |
3DK2222A voltag150mA 500mA 500mA, 150mA, 150mA 100MHz 3DK2222A | |
3DK2222AContextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 3DK2222A Plastic-Encapsulate Transistors TO-92 TRANSISTOR NPN 1. EMITTER FEATURE Power dissipation PCM : 2. BASE 0.625 W(Tamb=25℃) 3. COLLECTOR 1 2 3 MAXIMUM RATINGS* TA=25℃ unless otherwise noted |
Original |
3DK2222A 150mA 500mA 150mA, 100MHz 3DK2222A | |
1p1 transistorContextual Info: 3DK2222A SOT-23 Transistor NPN SOT-23 1. BASE 2.EMITTER 3.COLLECTOR Features Epitaxial planar die construction Complementary PNP Type available(MMBT2907A) MARKING: 1P1 Dimensions in inches and (millimeters) MAXIMUM RATINGS (TA=25℃ unless otherwise noted) |
Original |
3DK2222A OT-23 OT-23 MMBT2907A) -55to 150mA 500mA 100MHz 150mA 1p1 transistor | |
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Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors 3DK2222A SOT-23 TRANSISTOR NPN FEATURES y y 1. BASE Epitaxial planar die construction Complementary PNP Type available(MMBT2907A) 2.EMITTER 3.COLLECTOR MARKING: 1P1 |
Original |
OT-23 3DK2222A OT-23 MMBT2907A) -55to 150mA 500mA 100MHz | |
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Contextual Info: 3DK2222A NPN TO-92 Bipolar Transistors TO-92 1. EMITTER 4.45 5.21 2. BASE Features 2.92 MIN MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Parameter Value Units VCBO Collector-Base Voltage 75 V VCEO Collector-Emitter Voltage 40 V VEBO Emitter-Base Voltage |
Original |
3DK2222A 25MAX bre10 150mA 500mA 500mA, 150mA, | |
1p1 transistor
Abstract: 3DK2222A MMBT2907ALT1
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Original |
OT-23 3DK2222A OT-23 MMBT2907ALT1) -55to 150mA 500mA 100MHz 1p1 transistor 3DK2222A MMBT2907ALT1 | |
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Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 3DK2222A Plastic-Encapsulate Transistors TO-92 TRANSISTOR NPN 1. EMITTER FEATURES z Epitaxial planar die construction 2. BASE 3. COLLECTOR MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol |
Original |
3DK2222A 150mA 500mA 500mA, 150mA, 100MHz |