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3CA8772 Datasheets (1)

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Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
3CA8772		Unknown	TO-126 Plastic-Encapsulate Transistors	Original	PDF	515.81KB	3

3CA8772 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126 Plastic-Encapsulate Transistors 3CA8772 TRANSISTOR PNP TO – 126 FEATURES z High Current z Low Voltage 1. EMITTER 2. COLLECTOR 3. BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter	Original	o-126 3ca8772 -10ma 10mhz	PDF
transistor TO-126 Outline Dimensions Abstract: to-126 transistor 3CA8772 Plastic-Encapsulate Transistors TO-126 Contextual Info: TO-126 Plastic-Encapsulate Transistors 3CA8772 TRANSISTOR（ PNP ） TO—126 FEATURES Power dissipation PCM : 1.25 W（Tamb=25℃） Collector current ICM : -3 A Collector-base voltage V BR CBO : -40 V Operating and storage junction temperature range T J ，T stg: -55℃ to +150℃	Original	o-126 3ca8772 o--126 -100a +6290typ 090typ transistor to-126 outline dimensions to-126 transistor plastic-encapsulate transistors to-126	PDF
3CA8772 Abstract: TO126 package t 0433 transistor Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126 Plastic-Encapsulate Transistors 3CA8772 TRANSISTOR（ PNP ） TO—126 FEATURES Power dissipation PCM : 1.25 W（Tamb=25℃） Collector current ICM : -3 A Collector-base voltage V BR CBO : -40 V Operating and storage junction temperature range	Original	o-126 3ca8772 o--126 -100a +4290typ 090typ to126 package t 0433 transistor	PDF
3CA8772 Contextual Info: 3CA8772 3CA8772 TO-126 TRANSISTOR PNP FEATURES Power dissipation 1. EMITTER PCM: 1.25 W (Tamb=25℃) 2. COLLECTOR Collector current ICM: -3 A Collector-base voltage -40 V V(BR)CBO: Operating and storage junction temperature range 3. BASE 123 TJ, Tstg: -55℃ to +150℃	Original	3ca8772 o-126 -10kdown 10mhz	PDF
3CA8772 Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126 Plastic-Encapsulate Transistors 3CA8772 TRANSISTOR PNP TO-126 FEATURES Power dissipation 1. EMITTER 1.25 PCM: W (Tamb=25℃) 2. COLLECTOR Collector current -3 A ICM: Collector-base voltage -40 V V(BR)CBO:	Original	o-126 3ca8772 10mhz	PDF
Transistor S8550 2TY Abstract: Schottky barrier sot-23 Marking s4 sk 8050s KL4 SOT-23 d882 to-92 BR S8050 bq d882 transistor D882 datasheet S8050 equivalent PCR100-6 Contextual Info: DIODES IN SOD-123 1N4148W 1N4448W 1N5711W* 1N6263W* B0520LW B0530W B0540W B5817W B5818W B5819W BAT42W BAT43W BAT46W* BAV16W BAV19W BAV20W BAV21W SD101AW* SD101BW* SD101CW* SD103AW SD103BW SD103CW PD VR V IFM(mA) IR( A) (mW) 350 75 350 75 250	Original	od-123 1n4148w 1n4448w 1n5711w +161n6263w b0520lw b0530w b0540w b5817w b5818w transistor s8550 2ty schottky barrier sot-23 marking s4 sk 8050s kl4 sot-23 d882 to-92 br s8050 bq d882 transistor d882 datasheet s8050 equivalent pcr100-6	PDF
Y2 transistor Abstract: Transistor S8550 2TY bq d882 transistor bc547 bk 045 transistor D882 datasheet Z1 Transistor TRANSISTOR MARK AQY S8050 equivalent K596-B sot 89 D882 Contextual Info: >>JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD. >>Tel: 86-510-6852812*12 >>Fax: 86-510-6858792 >>http://www.cj-elec.com >>http://www.globalsources.com/cjet.co >>Email:huaxing20@hotmail.com huaxing20@sohu.com >> Huaxing Lee DIODES IN SOD-123	Original	huaxing20 od-123 1n4148w 1n4448w +151n5711w 1n6263w b0520lw b0530w b0540w y2 transistor transistor s8550 2ty bq d882 transistor bc547 bk 045 transistor d882 datasheet z1 transistor transistor mark aqy s8050 equivalent k596-b sot 89 d882	PDF