3904 TRANSISTOR Search Results

3904

Abstract: transistor 3904 npn 3904 TRANSISTOR PNP 3904 Transistor B 3904 transistor 3904 npn datasheet 1N916 VPS05163 3906 PNP
Contextual Info: PZT 3904 NPN Silicon Switching Transistor • High DC current gain: 0.1mA to 100mA 4 • Low collector-emitter saturation voltage • Complementary type: PZT 3906 PNP 3 2 1 Type Marking PZT 3904 ZT 3904 Pin Configuration 1=B 2=C 3=E VPS05163 Package 4=C

Contextual Info: SIEMENS NPN Silicon Switching Transistor SXT 3904 • High current gain: 0.1 mA to 100 mA • Low collector-emitter saturation voltage Type Marking Ordering Code tape and reel Pin Configuration 1 2 3 Package1) SXT 3904 1A Q68000-A8396 B SOT-89 C E Maximum Ratings

3904 TRANSISTOR PNP

Abstract: 3904 transistor 3904 H12E 3904 NPN 3904 SOT tr 3904 3904 transistor transistor 3904 npn datasheet transistor marking s1a
Contextual Info: NPN Silicon Switching Transistor SMBT 3904 High DC current gain: 0.1 mA to 100 mA ● Low collector-emitter saturation voltage ● Complementary type: SMBT 3906 PNP ● Type Marking Ordering Code (tape and reel) Pin Configuration 1 2 3 Package1) SMBT 3904

Contextual Info: SIEMENS PZT 3904 NPN Silicon Switching Transistor • High DC current gain 0.1 mA to 100 mA • Low collector-emitter saturation voltage • Complementary type: PZT 3906 PNP Type Marking Ordering Code (tape and reel) Pin Configuration 1 2 3 4 Package1) PZT 3904

3904

Abstract: KST3903 1A marking FAIRCHILD SOT-23 MARK 30 KST3904 3904 SOT23 MARKING 1Y
Contextual Info: KST3903/3904 KST3903/3904 General Purpose Transistor 2 NPN Epitaxial Silicon Transistor 1 SOT-23 Absolute Maximum Ratings Ta=25°C unless otherwise noted 1. Base 2. Emitter 3. Collector Symbol VCBO Collector-Base Voltage Parameter Value 60 Units V VCEO Collector-Emitter Voltage

3904

Abstract: 3904 TRANSISTOR PNP Transistor 3904 transistor 3904 npn datasheet 3904 SOT 3904 Transistor H12E Transistor 3904 Datasheet Q62702-Z2029
Contextual Info: NPN Silicon Switching Transistor PZT 3904 High DC current gain 0.1 mA to 100 mA ● Low collector-emitter saturation voltage ● Complementary type: PZT 3906 PNP ● Type Marking Ordering Code (tape and reel) Pin Configuration 1 2 3 4 Package1) PZT 3904

3904

Abstract: "marking s1a" sot-23 transistor 3904 1N916 3906 PNP transistor 3906 3904 TRANSISTOR npn h12e 3904 SOT23
Contextual Info: SMBT 3904 NPN Silicon Switching Transistor 3 • High DC current gain: 0.1mA to 100mA • Low collector-emitter saturation voltage • Complementary type: SMBT 3906 PNP 2 1 Type Marking SMBT 3904 s1A Pin Configuration 1=B 2=E VPS05161 Package 3=C SOT-23

3904

Abstract: Transistor 3904 tr 3904 3904 NPN 3904 Transistor transistor 3904 npn datasheet 3904 TRANSISTOR npn
Contextual Info: NPN Silicon Switching Transistor SXT 3904 High current gain: 0.1 mA to 100 mA ● Low collector-emitter saturation voltage ● Type Marking Ordering Code tape and reel Pin Configuration 1 2 3 Package1) SXT 3904 1A Q68000-A8396 B SOT-89 C E Maximum Ratings

3904

Contextual Info: SIEMENS NPN Silicon Switching Transistor • High DC current gain-: 0.1 mA to 100 mA • Low collector-emitter saturation voltage SMBT 3904 • Complementary type: SMBT 3906 PNP Type Marking SMBT 3904 s1A Ordering Code (tape and reel) »Q68000-A4416 P in t tonfigu ration

2SC3133 cross reference

Abstract: Hitachi 2sc281 NEC D882 A564A D1163A 2sC1815 cross reference a628a krc1211 KRA2203 NEC D288
Contextual Info: CROSS REFERENCE GUIDE TRANSISTORS TYPE MAKER SAMSUNG TYPE MAKER SAMSUNG TYPE MAKER SAMSUNG 2N 3903 M O TO RO LA 2N 3903 2SA1052 KSA812 2SA1298 T O S H IB A KSA1298 2N 3904 M O TO RO LA 2N 3904 2SA1072A FUJITSU KSA1050 2SA1299 M ITS UB ISH I KSA1174 2N 3905

Contextual Info: SIEMENS NPN Silicon Switching Transistor SXT 3904 • High current gain: 0.1 mA to 100 mA • Low collector-emitter saturation voltage Type Marking Ordering Code tape and reel PinC^onfigu ration 1 2 3 Package1) SXT 3904 1A Q68000-A8396 B SOT-89 C E Maximum Ratings

501 mosfet transistor

Abstract: Transistor 3904 CDRH4D28-3R3 transistor 3904 npn BAT54 CDRH4D28 FDS6930A JMK325BJ226MM LMK316BJ475ML MAX1953
Contextual Info: 4.75V to 5.25V VIN D1 BAT54 C2 4.7uF 10V X5R 1 R1 68k 2 ILIM U1 MAX1953 C7 0.01uF DH 10 8 9 C3 0.1uF N1A 1/2 FDS 6930A R2 4.7 C4 22uF 6V L1 X5R 3.3uH CDRH4D28 -3R3 2.5V@1.5A VOUT LX Q2 R7 MMBT 100k 3904 1.8V BST COMP C1 390pF R6 470k 5 IN Q1 MMBT 3904 DL PGND

3904 TRANSISTOR npn

Abstract: 3904 transistor 3904 3904 dual MMBT3904 .47k capacitor 3904 SOT23 MMBT DO1813P JMK325BJ226MM
Contextual Info: 4.75V to 5.25V VIN D1 BAT54 C2 4.7uF 10V X5R 1 R1 47k 2 ILIM U1 MAX1953 C7 0.1uF DH 10 8 9 C3 0.1uF N1A 1/2 FDS 6930A R2 4.7 C4 22uF 6V X5R 2x L1 2.2uH DO1813P -222HC 3.3V@2.2A VOUT LX Q2 R7 MMBT 100k 3904 2.5V BST COMP C1 470pF R6 100k 5 IN Q1 MMBT 3904

transistor marking 1y

Abstract: HB573
Contextual Info: KST3903/3904 NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS TA-25t: Characteristic Symbol Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation Storage Temperature

Contextual Info: KST3903/3904 NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR ABSOLUTE MAXIMUM RATINGS TA=25°C C haracteristic Sym bol Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation Storage Temperature

Transistor 3904

Abstract: 3904 npn 3904 SOT-23 sot 23 mark kst
Contextual Info: KST3903/3904 NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Rating Symbol Unit J Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation

Contextual Info: KST3903/3904 NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS TA=25°C Characteristic Symbol Collector-Base Voltage Col lector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation Storage Temperature

Contextual Info: 2N3903/3904 NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR • Collector-Emitter Voltage: VCeo =40V • Collector Dissipation: Pc max =625mW T O -92 ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Characteristic Collector-Base Voltage Collector-Emitter Voltage

spice 3906

Abstract: 3904 NPN 3904
Contextual Info: SPICE MODEL: MMDT3946LP4 MMDT3946LP4 COMPLEMENTARY NPN / PNP SURFACE MOUNT TRANSISTORS NEW PRODUCT Features • • • • • Complementary Pair: One 3904 NPN and One 3906 (PNP) Epitaxial Planar Die Construction Ideally Suited for Automated Assembly Processes

2N3904

Abstract: 2N3903 transistor 2n3903 3904 NPN 2N3903 transistor 3904 TRANSISTOR 2N3904 2n3904 225 2n3904 npn LC 300-S
Contextual Info: 2N 3903/3904 NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR • Collector-Emitter Voltage: VCEO=40V • Collector Dissipation: Pc m ax =625m W ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Characteristic Collector-Base Voltage Collector-Emitter Voltage

SMD Transistor 070 R

Abstract: PZT3904 PZT3906 smd 3904 TRANSISTOR
Contextual Info: PZT3904 SMALL SIGNAL NPN TRANSISTOR PRELIMINARY DATA • ■ ■ ■ Type Marking PZT3904 3904 SILICON EPITAXIAL PLANAR NPN TRANSISTOR SOT-223 PLASTIC PACKAGE FOR SURFACE MOUNTING CIRCUITS TAPE AND REEL PACKING THE PNP COMPLEMENTARY TYPE IS PZT3906 APPLICATIONS

transistor pnp 3906

Abstract: CMKT3906 be marking pnp
Contextual Info: Central" CMKT3904 NPN/NPN CMKT3906 PNP/PNP CMKT3946 NPN/PNP Semiconductor Corp. SURFACE MOUNT ULTRAmini" DUAL SMALL SIGNAL SILICON SWITCHING TRANSISTORS FEATURES: • ULTRAmini SPACE SAVING PACKAGE • TWO NPN 3904 or TWO PNP (3906) TRANSISTORS IN A SINGLE PACKAGE

pnp3906

Abstract: 3906 npn3904 MMDT3946
Contextual Info: /RANSYS ELECTRONICS LIMITED MMDT3946 COMPLEMENTARY NPN / PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features Complementary Pair One 3904-Type NPN, One 3906-Type PNP Epitaxial Planar Die Construction Ideal for Low Power Amplification and Switching Ultra-Small Surface Mount Package

Contextual Info: NEW PRODUCT MMDT3946 COMPLEMENTARY NPN / PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR POWER SEMICONDUCTOR Features • • • • • Complementary Pair One 3904-Type NPN, One 3906-Type PNP Epitaxial Planar Die Construction Ideal for Low Power Amplification and