3900.0000 Search Results
3900.0000 Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
|---|---|---|---|---|---|
| CS-USBAB00000-000.5 |
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Amphenol CS-USBAB00000-000.5 Molded USB 2.0 Cable - Type A-B 0.5m | |||
| CS-USBAB00000-003 |
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Amphenol CS-USBAB00000-003 Molded USB 2.0 Cable - Type A-B 3m | |||
| CS-USBAB00000-002 |
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Amphenol CS-USBAB00000-002 Molded USB 2.0 Cable - Type A-B 2m | |||
| CS-USBAA00000-001 |
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Amphenol CS-USBAA00000-001 Molded USB 2.0 Cable - Type A-A 1m | |||
| CS-USBAA00000-002 |
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Amphenol CS-USBAA00000-002 Molded USB 2.0 Cable - Type A-A 2m |
3900.0000 Price and Stock
TSC International 7070 39-00-00-0000ETD Core |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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7070 39-00-00-0000 | Bulk | 10,368 | 1 |
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TSC International 7099 39-00-00-0000ETD Core |
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7099 39-00-00-0000 | Bulk | 10,368 | 1 |
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TSC International 50ALL 39-00-00-0000ETD Core |
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50ALL 39-00-00-0000 | Bulk | 10,368 | 1 |
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TSC International N001 39-00-00-0000ETD Core |
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N001 39-00-00-0000 | Bulk | 10,358 | 1 |
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TSC International 8040 39-00-00-0000ETD Core |
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8040 39-00-00-0000 | Bulk | 10,358 | 1 |
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3900.0000 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
NE850R5
Abstract: NE850R599
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Original |
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marking C3E
Abstract: Transistor C3E marking s22 PC2771T
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Original |
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Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid |
Original |
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marking C3E
Abstract: PC2771T Transistor C3E nH/Transistor C3E
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Original |
PC8181TB PC8181TB marking C3E PC2771T Transistor C3E nH/Transistor C3E | |
NE850R5Contextual Info: PRELIMINARY DATA SHEET GaAs MES FET NE850R5 SERIES 0.5 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET DESCRIPTION The NE850R599 pow er GaAs FET covers 2 GHz to 10 GHz frequency range for com m ercial am plifier, oscillator applications and so on. The device incorporates Ti-AI gate and silicon dioxide glassivation. To reduce the therm al resistance, the device |
OCR Scan |
NE850R5 NE850R599 CODE-99 | |
63000-000Contextual Info: PRELIMINARY DATA SHEET GaAs MES FET NE850R5 SERIES 0.5 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET DESCRIPTION The N E850R599 pow er GaAs FET covers 2 GHz to 10 GHz frequency range for com m ercial amplifier, oscillator applications and so on. The device incorporates Ti-AI gate and silicon dioxide glassivation. To reduce the therm al resistance, the device |
OCR Scan |
NE850R5 E850R599 CODE-99 63000-000 | |
3900.0000
Abstract: PC2771T p1511
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Original |
PC8181TB PC8181TBIC P15114JJ2V0DS 3900.0000 PC2771T p1511 |