38W TRANSISTOR Search Results

LM3886

Abstract: datasheet LM3886T LM3886 circuit diagram LM3886T LM3886T IC 200 watts audio power amp transistors LM3886TF lm3886 output circuit LM388 lm3886 Data sheet
Contextual Info: LM3886 Overture Audio Power Amplifier Series High-Performance 68W Audio Power Amplifier w/Mute General Description The LM3886 is a high-performance audio power amplifier capable of delivering 68W of continuous average power to a 4Ω load and 38W into 8Ω with 0.1% THD+N from

LM3886 circuit diagram

Abstract: LM3886 LM3886TF lm3886 output circuit lm3886 application note LM3886TF circuits 68w transistor lm3886 amp pcb LM3886T IC woofer amp circuit diagram
Contextual Info: LM3886 Overture Audio Power Amplifier Series High-Performance 68W Audio Power Amplifier w/Mute General Description The LM3886 is a high-performance audio power amplifier capable of delivering 68W of continuous average power to a 4Ω load and 38W into 8Ω with 0.1% THD+N from

Contextual Info: DATA SHEET SSQE48T25015 DC-DC CONVERTER 36-75VDC Input; 1.5VDC, 25A, 38W Output FEATURES APPLICATIONS • RoHS lead-free solder and lead-solder-exempted products are available • Industry-standard DOSA pinout  Output: 1.5V at 25A  On-board input differential LC-filter

transistor 68W

Abstract: LM3886 68w transistor LM3886 circuit diagram LM3886 Overture Audio Power Amplifier Series
Contextual Info: LM3886 Overture Audio Power Amplifier Series High-Performance 68W Audio Power Amplifier w/Mute General Description The LM3886 is a high-performance audio power amplifier capable of delivering 68W of continuous average power to a 4Ω load and 38W into 8Ω with 0.1% THD + N from

LM3886

Abstract: datasheet lm3886 LM3886 circuit diagram LM3886TF lm3886t lm3886 an lm3886 output circuit LM3886TF circuits LM3886T IC 0118
Contextual Info: LM3886 Overture Audio Power Amplifier Series High-Performance 68W Audio Power Amplifier w/Mute General Description The LM3886 is a high-performance audio power amplifier capable of delivering 68W of continuous average power to a 4Ω load and 38W into 8Ω with 0.1% THD+N from

68w transistor

Abstract: transistor 68W LM3886 Overture Audio Power Amplifier Series trouble shorting top switch 249 LM3886 circuit diagram lm3886 lm3886 output circuit LM388
Contextual Info: LM3886 Overture Audio Power Amplifier Series High-Performance 68W Audio Power Amplifier w/Mute General Description The LM3886 is a high-performance audio power amplifier capable of delivering 68W of continuous average power to a 4Ω load and 38W into 8Ω with 0.1% THD+N from

datasheet lm3886

Abstract: LM3886 lm3886tf LM3886 circuit diagram LM3886T datasheet LM3886T operational amplifier discrete schematic 12v class d amplifier 40W LM3886TF circuits lm3886t with application notes
Contextual Info: LM3886 Audio Power Amplifier Series High-Performance 68W Audio Power Amplifier w Mute General Description Features The LM3886 is a high-performance audio power amplifier capable of delivering 68W of continuous average power to a 4X load and 38W into 8X with 0 1% THD a N from

LM3886

Abstract: LM3886T LM3886T IC lm3886 output circuit datasheet lm3886 LM3886TF TA11B TF11B DS011833 lm3886 application note
Contextual Info: LM3886 Overture Audio Power Amplifier Series High-Performance 68W Audio Power Amplifier w/Mute General Description The LM3886 is a high-performance audio power amplifier capable of delivering 68W of continuous average power to a 4Ω load and 38W into 8Ω with 0.1% THD + N from

38w smd transistor

Abstract: 38w transistor
Contextual Info: User’s Manual 16 R8C/38W Group, R8C/38X Group, R8C/38Y Group, R8C/38Z Group User’s Manual: Hardware RENESAS MCU R8C Family / R8C/3x Series All information contained in these materials, including products and product specifications, represents information on the product at the time of publication and is subject to change by

D38W7

Abstract: 70MM D32W8 D38W10 D38W12 D38W8 D38W9 D38W7-D38W14
Contextual Info: Silicon r " - j i f= 11— & Transistors i D38W7-14 The General Electric D38W7-D38W14 are NPN, silicon, planar, epitaxial transistors designed for low noise, high gain amplifier applications. FEATURES • • Low noise figure < 2db High voltage rating, 80V

SOT123 Package

Abstract: SOT123 BLF244 International Power Sources SOT-123
Contextual Info: Philips Semiconductors Product specification VHF power MOS transistor BLF244 FEATURES • • • • • • 7110ÖEb 0Ü437T5 SMS • PHIN SbE D PHILIPS INTERNATIONAL T-J *?-11 PIN CONFIGURATION High power gain Low noise figure Easy power control Good thermal stability

NTE480

Abstract: transistor 38W
Contextual Info: NTE480 Silicon NPN Transistor RF Power Output for Broadband Amp, PO = 40W @ 512MHz Description: The NTE480 is a 12.5 Volt epitaxial silicon NPN common emitter transistor designed for broadband applications in the 450 to 512MHz land mobile radio band. This device utilizes diffused emitter resistors to withstand infinite VSWR under operating conditions.

Contextual Info: EIC4450-8 4.40-5.00 GHz 8W Internally Matched Power FET UPDATED 11/15/2006 FEATURES • • • • • • • • 4.4 – 5.0 GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +39.5 dBm Output Power at 1dB Compression 10.5 dB Power Gain at 1dB Compression

2N7081

Contextual Info: 2N7081 Siliconix NĆChannel EnhancementĆMode Transistor Product Summary V BR DSS (V) rDS(on) (W) ID (A) 100 0.15 13 TOĆ257AB Hermetic Package D G Case Isolated S G D S NĆChannel MOSFET Top View Absolute Maximum Ratings (TC = 25_C Unless Otherwise Noted)

Contextual Info: Ordering number : EN2136B _ Thick Film Hybrid IC _ STK4171V AF Power Amplifier Split Power Supply (40W + 40W min, THD = 0.08%) Features Package Dimensions • Pin-compatible with the STK4102II series. The

A 1469 mosfet

Abstract: RD30HVF1 transistor 38W 1599 transistor 100OHM MITSUBISHI RF POWER MOS FET TRANSISTOR D 1785 transistor D 1666 transistor 38W 3 pin
Contextual Info: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD30HVF1 OBSERVE HANDLING PRECAUTIONS Silicon MOSFET Power Transistor,175MHz,30W DESCRIPTION OUTLINE DRAWING RD30HVF1 is a MOS FET type transistor specifically designed for VHF RF power amplifiers applications.

STK4152

Abstract: STK4152II transistor 38W en220 STK4152 II 30Wmin
Contextual Info: Ordering number: EN2202B Thick Film Hybrid IC STK4152II AF Power Amplifier Split Power Supply (30W + 30W min, THD = 0.4%) Features Package Dimensions • The STK4102II series (STK4152II) and STK4101V series (high-grade type) are pin-compatible in the output range of 6W to 50W and enable easy design.

stk4171

Abstract: resistor fix value transistor 38W
Contextual Info: Ordering number: 2136B Thick Film Hybrid IC STK4171V AF Power Amplifier Split Power Supply (40W + 40W min, THD = 0.08%) Features Package Dimensions • Pin-compatible with the STK4102II series. The STK4101V series use the same package and are available for output 15W to 50W.

STK4152II

Abstract: en220 STK4152 STK4152 II transistor 38W 4040 pin-compatible 50Hz sine wave filter circuit SAMPLE TRANSISTOR stk4152-ii AN 22022
Contextual Info: Ordering number: EN2202B Thick Film Hybrid IC STK4152II AF Power Amplifier Split Power Supply (30W + 30W min, THD = 0.4%) Features Package Dimensions • The STK4102II series (STK4152II) and STK4101V series (high-grade type) are pin-compatible in the output range of 6W to 50W and enable easy design.

STK4171V 18 PIN

Abstract: STK4171 STK4171V 2136B STK4171-V STK4101 STK4101V stk4171 voltage rating resistor fix value MG-200
Contextual Info: Ordering number: 2136B Thick Film Hybrid IC STK4171V AF Power Amplifier Split Power Supply (40W + 40W min, THD = 0.08%) Features Package Dimensions • Pin-compatible with the STK4102II series. The STK4101V series use the same package and are available for output 15W to 50W.

transistor 636 mitsubishi

Abstract: rd30 100OHM RD30HUF1 RD30HUF1-101 742 mosfet 636 MOSFET TRANSISTOR transistor 1734
Contextual Info: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD30HUF1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor,520MHz,30W OUTLINE DESCRIPTION DRAWING 22.0+/-0.3 RD30HUF1 is a MOS FET type transistor specifically designed for UHF RF power amplifiers applications.

100OHM

Abstract: RD30HUF1 IDQ10
Contextual Info: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD30HUF1 OBSERVE HANDLING PRECAUTIONS Silicon MOSFET Power Transistor,520MHz,30W OUTLINE DESCRIPTION DRAWING 22.0+/-0.3 RD30HUF1 is a MOS FET type transistor specifically designed for UHF RF power amplifiers applications.

A 1469 mosfet

Abstract: Pch MOS FET S 170 MOSFET TRANSISTOR 100OHM RD30HVF1 mosfet 800 v MITSUBISHI RF POWER MOS FET
Contextual Info: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD30HVF1 OBSERVE HANDLING PRECAUTIONS Silicon MOSFET Power Transistor,175MHz,30W DESCRIPTION OUTLINE DRAWING RD30HVF1 is a MOS FET type transistor specifically designed for VHF RF power amplifiers applications.

transistor D 1666

Abstract: MITSUBISHI RF POWER MOS FET RD30HVF1 RD30HVF1-101 mos 1718 transistor A 564 rf power transistor rd30hvf1 A 1469 mosfet transistor D 1762 1633 MOSFET
Contextual Info: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD30HVF1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,30W DESCRIPTION OUTLINE RD30HVF1 is a MOS FET type transistor specifically designed for VHF RF power amplifiers applications.