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    Diodes Incorporated AP2138N-3.0TRG1

    IC REG LINEAR 3V 250MA SOT23-3
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    DigiKey () AP2138N-3.0TRG1 Digi-Reel 151,853 1
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    AP2138N-3.0TRG1 Cut Tape 151,853 1
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    AP2138N-3.0TRG1 Reel 147,000 3,000
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    Avnet Americas AP2138N-3.0TRG1 Reel 20 Weeks 3,000
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    Mouser Electronics AP2138N-3.0TRG1 7,534
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    TME AP2138N-3.0TRG1 1,472 1
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    Avnet Asia AP2138N-3.0TRG1 24 Weeks 3,000
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    Avnet Silica AP2138N-3.0TRG1 14 Weeks 3,000
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    Diodes Incorporated AP2138N-3.3TRG1

    IC REG LINEAR 3.3V 250MA SOT23-3
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    DigiKey () AP2138N-3.3TRG1 Cut Tape 51,597 1
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    AP2138N-3.3TRG1 Digi-Reel 51,597 1
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    AP2138N-3.3TRG1 Reel 51,000 3,000
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    Avnet Americas AP2138N-3.3TRG1 Reel 20 Weeks 3,000
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    Mouser Electronics AP2138N-3.3TRG1 13,615
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    Bristol Electronics AP2138N-3.3TRG1 56 14
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    TME AP2138N-3.3TRG1 1,382 1
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    Avnet Asia AP2138N-3.3TRG1 15,000 12 Weeks 3,000
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    Avnet Silica AP2138N-3.3TRG1 51,000 14 Weeks 3,000
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    Chip Stock AP2138N-3.3TRG1 99,500
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    New Advantage Corporation AP2138N-3.3TRG1 588,000 1
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    Win Source Electronics AP2138N-3.3TRG1 87,000
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    Diodes Incorporated AP2138N-3.6TRG1

    IC REG LINEAR 3.6V 250MA SOT23-3
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    DigiKey () AP2138N-3.6TRG1 Digi-Reel 10,342 1
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    AP2138N-3.6TRG1 Cut Tape 10,342 1
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    AP2138N-3.6TRG1 Reel 9,000 3,000
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    Avnet Americas AP2138N-3.6TRG1 Reel 20 Weeks 3,000
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    Mouser Electronics AP2138N-3.6TRG1 4,514
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    TME AP2138N-3.6TRG1 3,000
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    Avnet Silica AP2138N-3.6TRG1 22 Weeks 3,000
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    onsemi FDA38N30

    MOSFET N-CH 300V 38A TO3PN
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    DigiKey FDA38N30 Tube 9,535 1
    • 1 $4.79
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    Avnet Americas FDA38N30 Tube 8 Weeks 450
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    Mouser Electronics FDA38N30 175
    • 1 $4.70
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    Newark FDA38N30 Bulk 1,064 1
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    Rochester Electronics FDA38N30 180 1
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    TME FDA38N30 1
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    ComSIT USA FDA38N30 150
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    Richardson RFPD FDA38N30 450
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    Avnet Asia FDA38N30 8 Weeks 450
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    Avnet Silica FDA38N30 9 Weeks 30
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    Chip Stock FDA38N30 13,783
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    EBV Elektronik FDA38N30 10 Weeks 30
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    IXYS Corporation IXFP38N30X3M

    MOSFET N-CH 300V 38A TO220
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    DigiKey IXFP38N30X3M Tube 2,274 1
    • 1 $4.87
    • 10 $4.87
    • 100 $2.91
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    Mouser Electronics IXFP38N30X3M 290
    • 1 $4.77
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    Bristol Electronics IXFP38N30X3M 50 2
    • 1 -
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    TTI IXFP38N30X3M Tube 300
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    TME IXFP38N30X3M 295 1
    • 1 $4.62
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    New Advantage Corporation IXFP38N30X3M 255 1
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    38N3 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    RAS 0510 SUN HOLD

    Abstract: relay ras 1210 sun hold RAS 0510 relay RAS 0510 RAS 0510 SUN HOLD ras 0910 sun hold RAS 0610 ERF 2030 ras 0610 relay 45n03
    Contextual Info: Compiled by Herman Boel & James Niven EMWG homepage: www.emwg.info 1998-2005 Preface & Copyright Welcome to the Euro-African Medium Wave Guide What lies in front of you or what you see on your computer screen is the result of a lot of hard work and love.


    Original
    mid-1990s RAS 0510 SUN HOLD relay ras 1210 sun hold RAS 0510 relay RAS 0510 RAS 0510 SUN HOLD ras 0910 sun hold RAS 0610 ERF 2030 ras 0610 relay 45n03 PDF

    Contextual Info: VDSM ITAVM ITRMS ITSM VT0 rT = = = = = = 4200 V 3960 A 6230 A 60000 A 0.95 V 0.13 mΩ Ω Phase Control Thyristor 5STP 38N4200 Doc. No. 5SYA1012-03 Jan. 02 • Patented free-floating silicon technology • Low on-state and switching losses • Designed for traction, energy and industrial applications


    Original
    38N4200 5SYA1012-03 38N4200 38N4000 38N3600 CH-5600 PDF

    5STP38N4200

    Abstract: 38n3
    Contextual Info: VDSM = 4200 V ITAVM = 3960 A ITRMS = 6230 A ITSM = 60000 A VT0 = 0.95 V rT = 0.130 mΩ Phase Control Thyristor 5STP 38N4200 Doc. No. 5SYA1012-03 Aug.00 • Patented free-floating silicon technology • Low on-state and switching losses • Designed for traction, energy and industrial applications


    Original
    5SYA1012-03 38N4200 38N4200 38N4000 38N3600 67xVDRM CH-5600 5STP38N4200 38n3 PDF

    5STP38N4200

    Abstract: 38N4200 ABB thyristor 5 38n3 38n3600
    Contextual Info: VDSM ITAVM ITRMS ITSM VT0 rT = = = = = = 4200 V 3960 A 6230 A 60000 A 0.95 V 0.130 mΩ Ω Phase Control Thyristor 5STP 38N4200 Doc. No. 5SYA1012-03 Sep. 01 • Patented free-floating silicon technology • Low on-state and switching losses • Designed for traction, energy and industrial applications


    Original
    38N4200 5SYA1012-03 38N4200 38N4000 38N3600 CH-5600 5STP38N4200 ABB thyristor 5 38n3 PDF

    Contextual Info: 38N3LLH5 N-channel 30 V, 0.0017Ω, 38 A, PolarPAK STripFET V Power MOSFET Preliminary Data Features Type VDSS 38N3LLH5 30V RDS on <0.002Ω RDS(on)*Qg PTOT 72nC*mΩ 5.2W • Ultra low top and bottom junction to case thermal resistance ■ Extremely low on-resistance RDS(on)


    Original
    STK38N3LLH5 STK38N3LLH5 2002/95/EC PDF

    5stp38n4000

    Abstract: 38N4200 38n3
    Contextual Info: Key Parameters VDSM = 4200 ITAVM = 3750 ITRMS = 5880 ITSM = 60000 VT0 = 0.95 rT = 0.130 V A A A V mΩ Phase Control Thyristor 5STP 38N4200 Doc. No. 5SYA 1012-02 May, 98 Features • Patented free-floating silicon technology • Low on-state and switching losses


    Original
    38N4200 38N4200 38N4000 38N3600 67xVDRM CH-5600 5stp38n4000 38n3 PDF