388 TRANSISTOR Search Results

2.4 agc 130 watts power amplifier schematic

Abstract: balanced microphone inside schematic PBL3726 microphone priority circuit Sound Design hearing G7 mic BD132 PBL38813 PBL38814 Signal Path Designer
Contextual Info: PRELIMINARY May 1998 PBL 388 14 Voice - switched 2-channel Circuit with loudspeaker amplifier Key Features Description. The PBL 388 14 contains all the necessary circuitry, amplifiers, detectors, comparator and control functions to implement a high performance voice switched

PBL3853

Abstract: circuit diagram for simple IR receiver
Contextual Info: January 1998 PBL 388 13 Voice-switched Speakerphone Circuit with built in loudspeaker amplifier Description. Key Features The PBL 388 13 contains all the necessary circuitry, amplifiers, detectors, comparator and control functions to implement a high performance, voice-switched,

nrf 0

Abstract: Ericsson PBL
Contextual Info: ERICSSON ^ Preliminary August 1997 PBL388 11/1 Voice-switched Speakerphone Circuit Description The PBL 388 11/1 contains all the necessary circuitry, amplifiers, detectors, comparators and control functions to implement a high performance, voice-switched,

PBL38814

Contextual Info: ERICSSON ^ Preliminary July 1997 PBL388 14 Voice-switched Speakerphone Circuit Key Features Description The PBL 388 14 contains all the necessary circuitry, amplifiers, detectors, comparators and control functions to implement a high performance, voice-switched,

388 transistor

Abstract: transistor 388 transistor 388
Contextual Info: MISCELLANEOUS SOCKETS Transistor & Microphone Sockets Series 388, 917 • Series 917 TO package sockets are available in 3, 4, 8 and 10 positions. • Two 8 pin versions feature pin centers on .200” or .230” circle. • Series 917 uses MM #1705 receptacles

sysmac s6

Abstract: omron plc cs example program A20011 IR0103 OMRON C500 programming manual AWG16 AWG22 AWG28 IEC60947-1 IEC60947-3
Contextual Info: DIC182 BLACK Operating Procedures Communications User's Manual Industrial Devices and Components Division H.Q. Measuring Components Department OMRON EUROPE B.V. Wegalaan 67-69, NL-2132 JD Hoofddorp The Netherlands Tel: 31 2356-81-300/Fax: (31)2356-81-388

2SJ626

Abstract: 5M15A nec 556
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ626 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING PACKAGE DRAWING Unit: mm DESCRIPTION +0.1 0.65–0.15 0.16+0.1 –0.06 • 4.0 V drive available • Low on-state resistance RDS(on)1 = 388 mΩ MAX. (VGS = –10 V, ID = –1.0 A)

82558B

Abstract: c65 004 82555 623377-001 BD109 heartbeat sensor intel 82555 lan transistor intel desktop mother board service manual 82558-B
Contextual Info: Alert on LAN* Design Guide Application Note AP-388 Revision 1.1 July 1998 Document Number: 703222-002 Revision Date Revision Feb. 1998 1.0 July 1998 1.1 Description First release • Replaced Figure 3. "Overview of BIOS Support for Alert on LAN" with an

Hitachi DSA002759

Contextual Info: 3SK296 Silicon N-Channel Dual Gate MOS FET ADE-208-388 1st. Edition Application UHF RF amplifier Features • Low noise figure. NF = 2.0 dB Typ. at f = 900 MHz • Capable of low voltage operation Outline 3SK296 Absolute Maximum Ratings Ta = 25°C Item Symbol

2SB541

Abstract: 2SD388 C14A 2SD388 A 2sd388/2sb541 251C audio amplifier 50w 50v
Contextual Info: 2SD 388/2SB541 2SD388/2SB541 npn/ pnp E.nm * y =• > h 7 v * * * NPN/PNP SILICON TRIPLE DIFFUSED MESA TRANSISTOR ffl/A u d io Frequency Power Amplifier WttmZPACKAGE DIMENSIONS Unit:mm ft St/FEA T U R E • 40~ 50W H i-Fi 7 v ^2 y t v 9 ') '<V — \ 7 v v 7 9 7;

PBL3726

Abstract: talking energy meter circuit diagram
Contextual Info: ERICSSON ^ January 1998 P B L 38813 V o i c e - s w i t c h e d S p e a k e r p h o n e Ci rcui t with built in l o u d s p e a k e r a mp l i f i e r Description. Key Features The PBL 388 13 contains all the necessary circuitry, amplifiers, detectors, comparator and control functions to implement a high performance, voice-switched,

transistor 91 330

Abstract: 388-XX-102-11-740800
Contextual Info: MISCELLANEOUS SOCKETS Transistor & Microphone Sockets 0,38 0,64 0,25 0,46 2,18 2,79 3,68 0,51 4,19 3,18 ● Series 917 TO package sockets are available in 3,4,8 and 10 pins. ● Two 8 pin versions feature pin centers on 5,08 or 5,84 circle. ● Uses Mill-Max # 1705 pin, see

MA4T64400

Abstract: low noise transistors MA4T645 MA4T644
Contextual Info: Silicon Low Noise Transistors Silicon Bipolar High fT Low IVoise Microwave Transistors M A4T64400 Series Features MA4T64435 - fT to 11 G H z Micro-X L o w N o ise F igu re at Low B ias V o lta g e H igh A sso cia te d G ain • H e rm e tic and S u rfa c e M o u n t

bst ekr 1000 manual

Abstract: bst ekr 1000 H electrical manual EKR 1000 BST bst ekr 500 bst ekr 1000 ekr bst com 60 EKR 1000 H BST documentation EKR 1000 BST bst ekr 1000 operation manual bst ekr 500 plus
Contextual Info: REJ09B0142-0500Z The revision list can be viewed directly by clicking the title page. The revision list summarizes the locations of revisions and additions. Details should always be checked by referring to the relevant text. 16 H8/3664Group Hardware Manual

Contextual Info: To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003.

ADE-702-247

Abstract: Hitachi DSA00279
Contextual Info: Hitachi Single-Chip Microcomputer H8/3694 Series H8/3694 HD64F3694, HD64F3694G, HD6433694, HD6433694G H8/3693 HD6433693, HD6433693G H8/3692 HD6433692, HD6433692G H8/3691 HD6433691, HD6433691G H8/3690 HD6433690, HD6433690G Hardware Manual ADE-602-252A Rev. 2.0

2SD1071

Abstract: 2sd1071 equivalent r6e2 T151 T460 T760
Contextual Info: 2SD1071 N P N H M J É ifc T V — tM TRIPLE DIFFUSED PLANER TYPE ULTRA H IG H /; TRANSISTOR e n tr + « .e m HIGH VOLTAGE POWER AMPLIFIER S liE B T J t g it S f f l F e a tu re s • hFE*''S ^' High D .C . cu rre n t gain • Low saturation voltage •

FERRITE TRANSFORMER 500W

Abstract: RF Amplifier 500w 175 mhz arf450 500w class d amplifier
Contextual Info: ARF450 Common Source Push-Pull Pair ARF450 BeO RF POWER MOSFET N - CHANNEL ENHANCEMENT MODE 150V 500W 11405 120MHz The ARF450 is a matched pair of RF power transistors in a common source configuration. It is designed for push-pull or parallel operation in scientific, commercial, medical and industrial RF power amplifier applications up to 120 MHz.

characteristics of zener diode

Abstract: 1DI400MP-050 30S3 M114 T760 transilent
Contextual Info: 1DI400MP-050 400A POWER TRANSISTOR MODULE •W S ' F e a tu re s • h F E ^i^l' High DC Current Gain Krtjfc • 3a*&W *«ERTfll : Applications • SUffl-f >/< —£ General Purpose Inverter • JRtt T O i i l l V Uninterruptible Power Supply • N C X f f lf t t t Servo & Spindle Drive for NC Machine Tools

transistor B414

Abstract: transister 6DI15M-120
Contextual Info: 6DI15M-12005A -'1?r7 — I* È ± 'N ° 9 — — )l* POWER TRANSISTOR MODULE • fë d l: : Features • High Arm Short Circuit Capability • hFE A ^v,' High DC Current Gain • 7 l) — Including F reew heeling Diode Insulated Type : Applications • i/L E K > ' < — 9

C-388

Contextual Info: TPR 175 175 Watts, 50 Volts, Pulsed Avionics 1030 - 1090 MHz GENERAL DESCRIPTION The TPR 175 is a high power COMMON BASE bipolar transistor. It is designed for pulsed systems in the frequency band 1030-1090 MHz. The device has gold thin-film metallization for proven highest MTTF. The

Contextual Info: Dnc. J.£.ii£,u TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TPR175 175 Watts, 50 Volts, Pulsed Avionics 1030-1090 MHz GENERAL DESCRIPTION The TPR 175 is a high power COMMON BASE bipolar transistor. It is

Contextual Info: SOT89 NPN SILICON PLANAR MEDIUM POWER TRANSISTOR ISSU E 3 - NOVEM BER 1995 O_ C O M PLEM EN TA R Y T Y P E - FCX593 PA RTM A RKIN G D E T A IL - N93 ABSOLUTE MAXIMUM RATINGS. PARAMETER VALUE UNIT VCBO 120 V Collector-Emitter Voltage VCEO 100 V Emitter-Base Voltage

APT40M80DN

Abstract: APT801R2DN mos die APT-106 APT5020DN APT5025DN APT601R3DN APT5540DN APT5023 co257
Contextual Info: ADVANCTD POUJFR TECHNOLOGY MT E D • QSSV'IQ'l 0000343 SOT APT POWER MOS IV COMMERCIAL AND CUSTOM DIE WAVR T - 2Æ -IS ' INTRODUCTION: The purpose of this APT Note is to describe the Power MOS IV™ Transistor Die available from Advanced Power Technology.