388 TRANSISTOR Search Results

a113z

Abstract: 94S-811-C113Z UMG10N FMA10A IMB17A UMA10N 96-388-A113Z
Contextual Info: Transistors UMA10N / FMA10A / IMB17A UMG10N 96-388-A113Z (94S-811-C113Z) 590

2.4 agc 130 watts power amplifier schematic

Abstract: balanced microphone inside schematic PBL3726 microphone priority circuit Sound Design hearing G7 mic BD132 PBL38813 PBL38814 Signal Path Designer
Contextual Info: PRELIMINARY May 1998 PBL 388 14 Voice - switched 2-channel Circuit with loudspeaker amplifier Key Features Description. The PBL 388 14 contains all the necessary circuitry, amplifiers, detectors, comparator and control functions to implement a high performance voice switched

PBL3853

Abstract: circuit diagram for simple IR receiver
Contextual Info: January 1998 PBL 388 13 Voice-switched Speakerphone Circuit with built in loudspeaker amplifier Description. Key Features The PBL 388 13 contains all the necessary circuitry, amplifiers, detectors, comparator and control functions to implement a high performance, voice-switched,

LB 11911

Abstract: 1SS99 TA8709 ta8710 C984 Z-636 2N6467 2N6468 T0-213AA TO213AA
Contextual Info: _ QÎ 3875081 G E SOLID STATE dT 01E , • File N um b er |3 ö 7S0 ö 1 17441 D 0017441 1 ~ S '? General-Purpose Power Transistors 388 2N6467, 2N6468 Silicon P-N-P « Medium-Power Transistors

nrf 0

Abstract: Ericsson PBL
Contextual Info: ERICSSON ^ Preliminary August 1997 PBL388 11/1 Voice-switched Speakerphone Circuit Description The PBL 388 11/1 contains all the necessary circuitry, amplifiers, detectors, comparators and control functions to implement a high performance, voice-switched,

fmg5a

Abstract: A143E C124E A124e a124* transistor c123* transistor transistor PNP A124e C123J a144* transistor TRANSISTOR a41
Contextual Info: Transistors FMS3 / FMS4 / IMT4 FMW3 / FMW4 / IMX8 94S-389-A41 (94S-398-C41) 578 Transistors UMA10N / FMA10A / IMB17A UMG10N (96-388-A113Z) (94S-811-C113Z) 590 Transistors Emitter common (dual digital transistors) UMA11N / FMA11A FFeatures 1) Two DTA143Z chips in a UMT or

PBL38814

Contextual Info: ERICSSON ^ Preliminary July 1997 PBL388 14 Voice-switched Speakerphone Circuit Key Features Description The PBL 388 14 contains all the necessary circuitry, amplifiers, detectors, comparators and control functions to implement a high performance, voice-switched,

388 transistor

Abstract: transistor 388 transistor 388
Contextual Info: MISCELLANEOUS SOCKETS Transistor & Microphone Sockets Series 388, 917 • Series 917 TO package sockets are available in 3, 4, 8 and 10 positions. • Two 8 pin versions feature pin centers on .200” or .230” circle. • Series 917 uses MM #1705 receptacles

sysmac s6

Abstract: omron plc cs example program A20011 IR0103 OMRON C500 programming manual AWG16 AWG22 AWG28 IEC60947-1 IEC60947-3
Contextual Info: DIC182 BLACK Operating Procedures Communications User's Manual Industrial Devices and Components Division H.Q. Measuring Components Department OMRON EUROPE B.V. Wegalaan 67-69, NL-2132 JD Hoofddorp The Netherlands Tel: 31 2356-81-300/Fax: (31)2356-81-388

388 transistor

Abstract: transistor 388 transistor sockets 104410
Contextual Info: MISCELLANEOUS SOCKETS Transistor & Microphone Sockets Series 388, 917 • Series 917 TO package sockets are available in 3,4,8 and 10 pins. • Two 8 pin versions feature pin centers on .200” or .230” circle. • Uses Mill-Max # 1705 pin, see page 137 for details.

2SJ626

Abstract: 5M15A nec 556
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ626 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING PACKAGE DRAWING Unit: mm DESCRIPTION +0.1 0.65–0.15 0.16+0.1 –0.06 • 4.0 V drive available • Low on-state resistance RDS(on)1 = 388 mΩ MAX. (VGS = –10 V, ID = –1.0 A)

marking XN

Abstract: nec 556
Contextual Info: PRELIMINARY PRODUCT INFORMATION MOS FIELD EFFECT TRANSISTOR 2SJ626 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING PACKAGE DRAWING Unit: mm DESCRIPTION +0.1 0.65–0.15 0.16+0.1 –0.06 • 4.0 V drive available • Low on-state resistance RDS(on)1 = 388 mΩ MAX. (VGS = –10 V, ID = –1.0 A)

82558B

Abstract: c65 004 82555 623377-001 BD109 heartbeat sensor intel 82555 lan transistor intel desktop mother board service manual 82558-B
Contextual Info: Alert on LAN* Design Guide Application Note AP-388 Revision 1.1 July 1998 Document Number: 703222-002 Revision Date Revision Feb. 1998 1.0 July 1998 1.1 Description First release • Replaced Figure 3. "Overview of BIOS Support for Alert on LAN" with an

Contextual Info: DU28200M Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)65 V(BR)GSS (V)20 I(D) Max. (A)20 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)388# Minimum Operating Temp (øC)

2SB541

Abstract: 2SD388 C14A 2SD388 A 2sd388/2sb541 251C audio amplifier 50w 50v
Contextual Info: 2SD 388/2SB541 2SD388/2SB541 npn/ pnp E.nm * y =• > h 7 v * * * NPN/PNP SILICON TRIPLE DIFFUSED MESA TRANSISTOR ffl/A u d io Frequency Power Amplifier WttmZPACKAGE DIMENSIONS Unit:mm ft St/FEA T U R E • 40~ 50W H i-Fi 7 v ^2 y t v 9 ') '<V — \ 7 v v 7 9 7;

3SK296

Abstract: Hitachi DSA00397 transistor ECG 152
Contextual Info: 3SK296 Silicon N-Channel Dual Gate MOS FET ADE-208-388 1st. Edition Application UHF RF amplifier Features • Low noise figure. NF = 2.0 dB Typ. at f = 900 MHz • Capable of low voltage operation Outline CMPAK–4 2 3 1 4 1. Source 2. Gate1 3. Gate2 4. Drain

transistor 388

Abstract: LM388 hi bass ic LM388N-1 LM 388 1.5 W audio power amplifier am/LM+1612
Contextual Info: LM388 9 National Semiconductor LM388 1.5W Audio Power Amplifier Variable voltage gain General Description Low distortion The LM 388 is an audio am plifier designed fo r use in medium pow er consum er applications. The gain is internally set to 20 to Keep external part count low, but the addition o f an

Contextual Info: Figure 9. IRMS6100/IRM T6100 Detail Drawings W ith Optional Side V iew or Top V iew Mounting TOP VIEW Front pick and place L Pin 1 •030_ J 0.75 L .014 (.36) .388 (9.86) ""Max. 61 0 0 R Y Y W W Infineon Technologies, Corp., O ptoelectronic Division (form erly Siem ens M icroelectronics, Inc.)

3SK296

Contextual Info: 3SK296 Silicon N-Channei Dual Gate MOS FET HITACHI ADE-208-388 1st. Edition Application U H F R F am plifier Features • L o w noise figure. N F = 2.0 d B Typ. at f = 900 M H z • Capable o f lo w voltage operation Outline C M P A K -4 1. 2. 3. 4. Source

PBL3726

Abstract: talking energy meter circuit diagram
Contextual Info: ERICSSON ^ January 1998 P B L 38813 V o i c e - s w i t c h e d S p e a k e r p h o n e Ci rcui t with built in l o u d s p e a k e r a mp l i f i e r Description. Key Features The PBL 388 13 contains all the necessary circuitry, amplifiers, detectors, comparator and control functions to implement a high performance, voice-switched,

transistor 91 330

Abstract: 388-XX-102-11-740800
Contextual Info: MISCELLANEOUS SOCKETS Transistor & Microphone Sockets 0,38 0,64 0,25 0,46 2,18 2,79 3,68 0,51 4,19 3,18 ● Series 917 TO package sockets are available in 3,4,8 and 10 pins. ● Two 8 pin versions feature pin centers on 5,08 or 5,84 circle. ● Uses Mill-Max # 1705 pin, see

2n4401 331

Abstract: 2n4403 331 2n3904 409 2n3904 331 k 2715 2n3906 331 1352s MPSA06 346 2N584 C847B
Contextual Info: Transistors Product List Product List 2N3904 . 614 2S B 2N3906 . 598

2N4922

Abstract: BU108 2SB655 BD390 MJ11021 2sb557 BDX54 2n6107 MOTOROLA 2SC1943 MJE2482
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BUV23 SWITCHMODE Series NPN Silicon Power Transistor 30 AMPERES NPN SILICON POWER METAL TRANSISTOR 325 VOLTS 250 WATTS . . . designed for high current, high speed, high power applications. • High DC current gain: HFE min. = 15 at IC = 8 A

MJ3001 equivalent

Abstract: MJ3000 equivalent 2sc1096 equivalent BU108 MJ3000 circuit MJ2955 2n3055 200 watts amplifier BDX54 MJ2501 MJ2955 replacement 2n3055 replacement
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJ2955 See 2N3055 MJ2955A (See 2N3055A) Medium-Power Complementary Silicon Transistors MJ2500 . . . for use as output devices in complementary general purpose amplifier applications. MJ2501* • High DC Current Gain — hFE = 4000 (Typ) @ IC = 5.0 Adc