3773 P Search Results

3773P

Abstract: 3773 P 8 pin ic 3773 ic 3773 LM 3771 8 pin 3773 3773 PBL3773N
Contextual Info: ERICSSON $ January 1995 PBL 3773 Dual Stepper M otor Driver Description Key Features The PBL 3773 is a switch-mode chopper , constant-current driver IC with two chan­ nels, one for each winding of a two-phase stepper motor. The circuit is similar to Ericsson's PBL 3771 and PBL 3772. While all Dual stepper motor drivers are

Transistor 3773

Abstract: 3773 2N3773 3773 P ic 3773 2N4348 N3773 2N 3773 3773 IC 4348
Contextual Info: *2N 3773 *2N 4348 NPN SILICON TRANSISTORS, HOMOBASES TR A N SISTO R S NPN SILIC IU M . H OM OBASES •fc Preferred device D is p o s itif re co m m a n d é • LF large signal power amplification - Amplification B F grands signaux de puissance V CEO High current switching

ZENER DIODE t2d

Abstract: 3 phase monitoring IC 8-pin DIP 3773 3773 transistor voltage diagram 8 pin ic 3773 8-pin 3773 ic 3773 3773 RLF7030T-2R2M5R4 Diode zener T2D
Contextual Info: LTC3773 Triple Output Synchronous 3-Phase DC/DC Controller with Up/Down Tracking FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ DESCRIPTION The LTC 3773 is a high performance, 3-phase, triple output synchronous step-down switching regulator controller

MB20100

Abstract: 3773 3810 S5835
Contextual Info: MB20100 SCHOTTKY DIE SPECIFICATION Revision 3 11/27/2000 General Description Low Ir 100V 20A Single Anode ELECTRICAL CHARACTERISTICS DC Blocking Voltage: Average Rectified Forward Current Ir = 0.2 mA Maximum Instantaneous Forward Voltage @ 20 Amperes, 25 0

BDX 241

Abstract: transistor 304 transistor bd 242 transistor 3055 2N3055 transistor BD 249 transistor BD 140 BD 140 transistor transistor 2N 3055 bd 3055
Contextual Info: TOP-3 general purpose transistor selector guide y guide de sélection transistors TOP-3 usage général THOMSON-CSF ^ \ \ C E O (sus 45V 60V 80V 100V BD 249 BD 249A BD 249B BD 249C BD 250 BD 250A BD 250B BD 250C Case 25 A T0-220AB general purpose transistor selector guide

T879N

Abstract: T718N T1189N T1509N T1989N T358N T508N T588N diode 47-16 47-16 diode
Contextual Info: W1C - Schaltung ~ Anschlußspannung Bemessungs-Gleichspannung Sperrspannung Bauelement n. VDE 0558 VDRM/RRM 400 Veff 500 Veff 1400 V 1600 V ~ Kühlblöcke für Wasserkühlung Temp. tA Satzstrom Id Verlustl. P d Schaltung [°C] [A] [W] 25 537 764 857 1109

Contextual Info: i, Una. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 USA NPN 2N3773*, PNP 2N6609 TELEPHONE: 973 376-2922 (212) 227-6005 FAX: (973) 376-8960 Complementary Silicon Power Transistors The 2N3773 and 2N6609 are PowerBase power transistors designed for high power audio, disk head positioners and other linear

transistor bd 202

Abstract: transistor BD 249 BDX 241 B0707 BD transistor transistor bd 911 transistor 2N 3055 5294 power transistor transistor BD 139 transistor bd 711
Contextual Info: TOP-3 general purpose transistor selector guide guide de sélection transistors TOP-3 usage général y TH O M SO N -CSF ^ \ \ C E O (sus 45V 60V 80V 100V BD 249 BD 249A BD 249B BD 249C BD 250 BD 250A BD 250B BD 250C Case 25 A T0-220AB general purpose transistor selector guide

BDX 241

Abstract: BD 35 transistor 3055 transistor TRANSISTOR BDX transistor 3055 transistor BUx 49 transistor BD 140 TRANSISTOR BDX 14 transistor 2N 3055 transistor bd 905
Contextual Info: TOP-3 general purpose transistor selector guide y guide de sélection transistors TO P-3 usage général THOMSON-CSF ^ \ \ C E O (sus 45V 60V 80V 100V BD 249 BD 249A BD 249B BD 249C BD 250 BD 250A BD 250B BD 250C Case 25 A T0-220AB general purpose transistor selector guide

Ultrasonic amplifier 50w

Abstract: 2n377 2n3773 power Amplifier BDY29 BDY37 2N1482 2N3054 2N344 2N5298 2N5786
Contextual Info: Ic to 80 A . . . Pt to 300 W . . . VcE to 170 V HOMETAXIAL-BASE N-P-N POWER TYPES le - 1 6 A m a x . • 26 0 W m ax. <e “ 1 .6 A m a x. le a 1 . S A m ax . l c » 3.S A m ax . lc * 4 A m a x . lc a 4 A m ax. le • 3 A m ax. le “ 3 A m ax. le - 7 A m ax.

2N3055

Abstract: 2N1482 2N3054 2N344 2N5298 2N5786 2N6478 ITO-220
Contextual Info: Ic to 80 A . . . Pt to 300 W . . . V cE to 170 V HOMETAXIAL-BASE N-P-N POWER TYPES le a 1 .S A max. <e “ 1.6 A max. P T " 8.76 W max. ITO-39J* PT - 8.7S W m u . TO-391* lc » 3.S A max. P y « 10 W max. (TO-391* lc * 4 A max. Pt - GO W max. < T 0 6 6 *

2N3055

Abstract: 40327 40412 BDY71 2N1482 2N3054 2N344 2N5298 2N5786 2N6478
Contextual Info: Ic to 80 A . . . Pt to 300 W . . . VcE to 170 V HOMETAXIAL-BASE N-P-N POWER TYPES le - 1 6 A m a x . • 26 0 W m ax. <e “ 1 .6 A m a x. le a 1 . S A m ax . l c » 3.S A m ax . lc * 4 A m a x . lc a 4 A m ax. le • 3 A m ax. le “ 3 A m ax. le - 7 A m ax.

OV7649

Abstract: omnivision OmniVision CMOS Camera omnivision OV76 Beijing automatic room power control applications OV7149 camerachips
Contextual Info: Advanced Information Product Brief OV7649 Color CMOS VGA 640 x 480 CAMERACHIPTM OV7149 B&W CMOS VGA (640 x 480) CAMERACHIPTM General Description Applications The OV7649 (color) and OV7149 (black and white) CAMERACHIPSTM are low voltage CMOS image sensors

Contextual Info: Russellstoll Electrical Interconnection Systems FS/FD Metallic Connections Overview The FS/FD™ general-purpose interconnection system is designed for lower-amperage marine and rough service applications with rugged die-cast aluminum housings and epoxy powder-coated

f455a

Abstract: 455a filter itf455a CDMA450
Contextual Info: SAW Bandpass Filter F455A z RF bandpass filter for CDMA450 A-Band Tx. Part z Usable bandwidth 5MHz 452.5 MHz ~ 457.5 MHz z High attenuation z No matching 50Ω single-ended operation z Ceramic Surface Mounted Device Package ( 3.8 mm x 3.8 mm ) z RoHS Compliant

Contextual Info: OLE D • bfc.53^31 001420b £ D 'T ~ 3 '3 ~ " N AMER PHILIPS/DISCRETE 86D 01968 BLY93A A V.H.F. POWER TRANSISTOR N-P-N epitaxial planar transistor intended for use in class-A, B and C operated mobile, industrial and m ilitary transmitters w ith a supply voltage o f 28 V . The transistor is resistance stabilized. Every tran­

2N6477

Abstract: BD278 2N1482 2N3054 2N344 2N5298 2N5786 2N6478 ITO-220
Contextual Info: Ic to 80 A . . . Pt to 300 W . . . VcE to 170 V HOMETAXIAL-BASE N-P-N POWER TYPES le a 1 .S A max. <e “ 1.6 A max. P T " 8.76 W max. ITO-39J* PT - 8.7S W m u . TO-391* lc » 3.S A max. Py « 10 W max. (TO-391* lc * 4 A max. Pt - GO W max. < T 0 6 6 *

JE 800 transistor

Abstract: UPA76ha upa76 PA76HA KJE transistor pa76h JE 33 KJE 17 transistor B0188 361-s
Contextual Info: NEC W T / \ M À f 7 'S ' h =7 Com pound Transistor ¿¿PA76HA t: ^ n p n x >; □ h^ * N PN Silicon Epitaxial Compound Transistor Differentia! Amplifier ^ f^ H l/PA C K A G E DIMENSIONS if t * / F E A T U R E S O l c h i p m iÊT ibètztb , -< 714 / V b e = 2 m V T Y P . )

2N6259

Abstract: 2n3773 2N3773A 2N4348 2N 6259 2n3773m
Contextual Info: Power Transistors File Number 526 2N3773, 2N4348, 2N6259 HARRIS SEMICOND SECTOR 27E D High-Voltage, High-Current Power Transistors Broadly Applicable Devices for Industrial and Commercial Use 43Ü5571 ÜGnaSM 3 « H A S T-33-I5 TERMINAL DESIGNATIONS T " I- 3

D1911

Abstract: B36D
Contextual Info: 12345623782348239AB1C12D4E654FF52 1 1 DEFFE6 83D7D46 66 1 11 /!31%'  &()11 %'()(E146931 11 %4!871168814773&34361 11 8!657158751BC1884361 11 8!65715374618348718843611

2SA1608

Abstract: 2SC4173
Contextual Info: NEC j m^Tfvrx A Silicon T ran sisto r _ 2SC4173 N P N ih N PN Silicon Epitaxial T ra n sisto r Audio Frequency A m p lifie r and Switching # i t O ftg | mii i t i 1 , X 't -y - f > 7", • &)§ iSigipM Ù ¿1a S t t c f if f l- C 'è 4" 11] i t o

Contextual Info: NEC » f / 7s— 9 • 2 /— h C o m l i- r z T r a n s is t o r GN1L3M M « p o u n d p n p i 'J □ tt > A V =7 M T O O / N '^ ! mm 2.1 ±0.1 1.25 ±0.1 (R i =4.7 kQ, R 2= 4.7 k£2) O— W V R. O GA1L3M t =i > 7° U / > ? i) zl&Fìì T * & t „ ( T a = 25 °C

2n5578

Abstract: 2N210 2N5298 2N1482 2N3054 2N344 2N5786 2N6478 ITO-220
Contextual Info: Ic to 80 A . . . Pt to 300 W . . . VcE to 170 V HOMETAXIAL-BASE N-P-N POWER TYPES le - 1 6 A m ax. • 2 6 0 W m ax. <e “ 1 .6 A m ax. le a 1 . S A m ax. lc » 3.S A m ax. lc * 4 A m a x. lc a 4 A m ax. le • 3 A m ax. le “ 3 A m a x. le - 7 A m ax. lc a 1 S A m ax.

Infrared-Sensor

Abstract: Thermopile Sensor Circuit OTC-239-A thermopile microwave oven Thermistor
Contextual Info: Thermopile Infrared Sensor OTC-239
Features The thermopile sensor consists of a series of 44 thermoelements, forming a sensitive area of 0.5*0.5 mm2. The sensor is hermetically sealed into a TO-18 metal housing, with optical filter. This standard filter allows measurements to be made in the spectral range above 5m wavelength.