36EV Search Results

Contextual Info: SEMICONDUCTOR KDZ2.0EV~36EV TECHNICAL DATA CONSTANT VOLTAGE REGULATION APPLICATION. REFERENCE VOLTAGE APPLICATION. FEATURES 2010. 9. 1 Revision No : 8 1/4

marking 20

Abstract: KDZ15EV-Y
Contextual Info: SEMICONDUCTOR KDZ2.0EV~36EV TECHNICAL DATA ZENER DIODE SILICON EPITAXIAL PLANAR DIODE CONSTANT VOLTAGE REGULATION APPLICATION. REFERENCE VOLTAGE APPLICATION. FEATURES ・Small Package : ESC ・Sharp Breakdown Characteristic. MAXIMUM RATING Ta=25℃ CHARACTERISTIC

KDZ10EV

Abstract: KDZ11EV KDZ12EV KDZ13EV KDZ15EV KDZ16EV KDZ18EV KDZ20EV KDZ22EV KDZ24EV
Contextual Info: SEMICONDUCTOR KDZ2.0EV~36EV TECHNICAL DATA ZENER DIODE SILICON EPITAXIAL PLANAR DIODE CONSTANT VOLTAGE REGULATION APPLICATION. REFERENCE VOLTAGE APPLICATION. CATHODE MARK C Sharp Breakdown Characteristic. 1 A Small Package : ESC B FEATURES E 2 MAXIMUM RATING Ta=25

Contextual Info: SEMICONDUCTOR KDZ2.0EV~36EV TECHNICAL DATA ZENER DIODE SILICON EPITAXIAL PLANAR DIODE CONSTANT VOLTAGE REGULATION APPLICATION. REFERENCE VOLTAGE APPLICATION. CATHODE MARK G ・Sharp Breakdown Characteristic. 1 A ・Small Package : ESC B FEATURES E C 2 D MAXIMUM RATING Ta=25℃

A2 9 zener diode

Abstract: diode yz zener DIODE marking kd zener 2D Z16E Marking a4 z a4 ZENER DIODE ZENER A4
Contextual Info: SEM ICONDUCTOR KDZ2.0EV-36EV TE CHNICAL DATA ZENER DIODE SILICON EPITAXIAL PLANAR DIODE CO N ST A N T V O L T A G E REG U LATIO N A PPLICATIO N. RE FE RE N CE V O L T A G E A PPLICATION. FEA T U RE S ! • Small Package : ESC • Sharp Breakdown Characteristic.

Contextual Info: SEMICONDUCTOR KDZ2.0EV~36EV TECHNICAL DATA ZENER DIODE SILICON EPITAXIAL PLANAR DIODE CONSTANT VOLTAGE REGULATION APPLICATION. REFERENCE VOLTAGE APPLICATION. G 1 G ・Sharp Breakdown Characteristic. E C A ・Small Package : ESC B CATHODE MARK FEATURES 2 MAXIMUM RATING Ta=25℃

Si4133W

Abstract: Si4133W-BM Si4133WM-EVB Wideband Synthesizer
Contextual Info: Si4133W RF Synthesizer for W-CDMA DUAL-BAND RF FREQUENCY SYNTHESIZER WITH INTEGRATED VCOS FOR W-CDMA WIRELESS COMMUNICATIONS FEATURES • Dual-Band RF Synthesizers RF1: 2.3 GHz to 2.5 GHz RF2: 750 MHz to 1.65 GHz • IF Synthesizer IF: 62.5 MHz to 1.0 GHz

gsm transceiver

Abstract: PROGRAMMABLE SYNTHESIZER voltage controlled oscillator synthesizer Si4113G Si4122G Si4123G Si4133G Si4133G-X2 Si4133GX2-DS GSM kit for silicon
Contextual Info: Si4133G RF Synthesizer for GSM/GPRS DUAL-BAND RF FREQUENCY SYNTHESIZER WITH INTEGRATED VCOs FOR WIRELESS COMMUNICATIONS FEATURES • Dual-Band RF Synthesizers RF1: 900 MHz to 1.8 GHz RF2: 750 MHz to 1.5 GHz • IF Synthesizer IF: 500 MHz to 1.0 GHz • Settling time 140 µsec for multi-slot data

NE5045

Abstract: NE5045N ME5045 circuit diagram for simple IR receiver NE5045D 500fis uaa automotive
Contextual Info: NE5045 Signetics Seven-Channel RC Decoder Product Specification L in e a r P ro d u c ts D E S C R IP T IO N The NE5045 is a serial input, parallel output, decoder intended for applica­ tions in pulse width or pulse position modulation systems. The serial input

bird bell mini project

Abstract: c2078 bird bell mini project cut diagram compass C2120 mini helicopter project STR 6653 smd transistor c2073 C2060 HT36RA1 C2068
Contextual Info: HT-MDS Development System User¢s Guide July, 2008 Copyright Ó 2008 by HOLTEK SEMICONDUCTOR INC. All rights reserved. Printed in Taiwan. No part of this publication may be reproduced, stored in a retrieval system, or transmitted in any form by any means,