366M Search Results

FDMC2674

Contextual Info: FDMC2674 N-Channel UltraFET Trench MOSFET 220V, 7.0A, 366mΩ Features tm General Description „ Max rDS on = 366mΩ at VGS = 10V, ID = 1.0A UltraFET device combines characteristics that enable benchmark efficiency in power conversion applications. Optimized for rDS(on), low ESR, low total and Miller gate charge,

Contextual Info: W986416DH 1M x 4 BANKS × 16 BITS SDRAM GENERAL DESCRIPTION W986416DH is a high-speed synchronous dynamic random access memory SDRAM , organized as 1M words × 4 banks × 16 bits. Using pipelined architecture and 0.175 µm process technology, W986416DH delivers a data bandwidth of up to 366M bytes per second (-55). For different

Contextual Info: 366M Diodes Silicon Rectifier Military/High-RelN I O Max.(A) Output Current5.0 @Temp (øC) (Test Condition)145# V(RRM)(V) Rep.Pk.Rev. Voltage600 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.100 V(FM) Max.(V) Forward Voltage1.1 @I(FM) (A) (Test Condition)5.0 @Temp. (øC) (Test Condition)25#

21071AA

Abstract: 21A04-B0 21a04 Alpha 21064-BB 21164-P6
Contextual Info: Alpha 64-bit Microprocessor Fact Sheet: Alpha 21164 Microprocessor NEW NEW 300MHz 8.7 8.7 20-100MHz 366MHz 11.3 14.5 25-122MHz 433MHz 13.3 18.3 29-144MHz 500MHz 15.4 21.1 33166MHz Off Chip Cache Manuf. Process 8KB 8KB 96K 1 MB 0.35 micron 8KB 8KB 96K 1 MB

2N3501 JANTX

Abstract: JANKCB2N3501 2N3501 diagram 2n3501ub 366n JANKCC2N3501 2N3498 2N3501 2N3499 2N3499L
Contextual Info: INCH-POUND The documentation and process conversion measures necessary to comply with this document shall be completed by 5 November 2010. MIL-PRF-19500/366N 5 August 2010 SUPERSEDING MIL-PRF-19500/366M 22 October 2007 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, AMPLIFIER,

Contextual Info: FDMC2674 N-Channel UltraFET Trench MOSFET 220V, 1A, 366mΩ Features tm General Description UltraFET® device combine characteristics that enable benchmark efficiency in power conversion applications. Optimized for rDS on , low ESR, low total and Miller gate

Contextual Info: FDMC2674 N-Channel UltraFET Trench MOSFET 220V, 1A, 366m: Features tm General Description UltraFET® device combines characteristics that enable benchmark efficiency in power conversion applications. Optimized for rDS on , low ESR, low total and Miller gate

Contextual Info: LTC2232/LTC2233 10-Bit,105Msps/ 80Msps ADCs U FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ DESCRIPTIO Sample Rate: 105Msps/80Msps 61dB SNR up to 140MHz Input 75dB SFDR up to 200MHz Input 775MHz Full Power Bandwidth S/H Single 3.3V Supply Low Power Dissipation: 475mW/366mW

Contextual Info: LTC2222/LTC2223 12-Bit,105Msps/ 80Msps ADCs FEATURES n n n n n n n n n n n n n DESCRIPTION Sample Rate: 105Msps/80Msps 68dB SNR up to 140MHz Input 80dB SFDR up to 170MHz Input 775MHz Full Power Bandwidth S/H Single 3.3V Supply Low Power Dissipation: 475mW/366mW

FDMC2674

Contextual Info: FDMC2674 N-Channel UltraFET Trench MOSFET 220V, 1A, 366mΩ Features tm General Description UltraFET® device combines characteristics that enable benchmark efficiency in power conversion applications. Optimized for rDS on , low ESR, low total and Miller gate

Contextual Info: MOULDED HELICAL ANTENNA 132-366MHZ TECHNICAL SPECIFICATIONS PART NO. MFX-BNC-JRC MFX-BNC-H3 MFX-BNC-H4 MFX-BNC-H5 MFX-BNC-H6 MFX-BNC-H7 MFX-BNC-K5 MFX-BNC-K6 MFX-BNC-K7 MFX-BNC-L MFX-BNC-M MFX-BNC-N MFX-BNC-P MFX-BNC-R Frequency in MHz 139-157 132-143 141-151

TL 2223 pc

Abstract: DAC IC 0804 ac voltage stablizer LTC6600-20 ETC1-1-13 V4 center tapped transformer 1K215
Contextual Info: LTC2222/LTC2223 12-Bit,105Msps/ 80Msps ADCs U FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ DESCRIPTIO Sample Rate: 105Msps/80Msps 68dB SNR up to 140MHz Input 80dB SFDR up to 170MHz Input 775MHz Full Power Bandwidth S/H Single 3.3V Supply Low Power Dissipation: 475mW/366mW

Contextual Info: FDMC2674 N-Channel UltraFET Trench MOSFET 220V, 7.0A, 366mΩ Features tm General Description „ Max rDS on = 366mΩ at VGS = 10V, ID = 1.0A UltraFET device combines characteristics that enable benchmark efficiency in power conversion applications. Optimized for rDS(on), low ESR, low total and Miller gate charge,

lucent 1646t00

Abstract: CPU 414-2 Processor Module 1646T00 BIOS 29EE020 39 PIN TFT MOBILE DISPLAY S8501 8254 TIMER PCI1251B ES1978s 37 PIN TFT MOBILE DISPLAY
Contextual Info: 1 Specifications 1-2 System Specifications FEATURE SPECIFICATION REMARKS PROCESSOR INTEL MOBILE PENTIUM-II DIXON, CELERON CLOCK FREQ.: 266/300/333/366MHz PACKAGE TYPE: MMC-2 TYPE L2 CACHE IN DIXON PROCESSOR INTEL i82443BX+i82371EB i82443BX in MMC-2 Module

w986416dh-6

Abstract: 366M W986416DH W986416DH-55 W986416DH-7 W986416DH-7L
Contextual Info: W986416DH 1M x 4 BANKS × 16 BITS SDRAM GENERAL DESCRIPTION W986416DH is a high-speed synchronous dynamic random access memory SDRAM , organized as 1M words × 4 banks × 16 bits. Using pipelined architecture and 0.175 µm process technology, W986416DH delivers a data bandwidth of up to 366M bytes per second (-55). For different application,

22323

Abstract: 201d6 LTC2222 LTC2223 LTC2224 LTC2232 LTC2233 LTC2234 DC751
Contextual Info: LTC2232/LTC2233 10-Bit,105Msps/ 80Msps ADCs U FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ DESCRIPTIO Sample Rate: 105Msps/80Msps 61dB SNR up to 140MHz Input 75dB SFDR up to 200MHz Input 775MHz Full Power Bandwidth S/H Single 3.3V Supply Low Power Dissipation: 475mW/366mW

Contextual Info: FDMC2674 N-Channel UltraFET Trench MOSFET 220V, 7.0A, 366mΩ Features tm General Description ̈ Max rDS on = 366mΩ at VGS = 10V, ID = 1.0A UltraFET device combines characteristics that enable benchmark efficiency in power conversion applications. Optimized for rDS(on), low ESR, low total and Miller gate charge,

LTC2233

Abstract: LTC2234 LTC2222 LTC2223 LTC2224 LTC2232 TL 2223 pc
Contextual Info: LTC2222/LTC2223 12-Bit,105Msps/ 80Msps ADCs U FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ DESCRIPTIO Sample Rate: 105Msps/80Msps 68dB SNR up to 140MHz Input 80dB SFDR up to 170MHz Input 775MHz Full Power Bandwidth S/H Single 3.3V Supply Low Power Dissipation: 475mW/366mW

ADS5237

Abstract: ADS5237IPAG ADS5237IPAGT TQFP-64
Contextual Info: BurrĆBrown Products from Texas Instruments ADS5237 SBAS420A – AUGUST 2007 – REVISED OCTOBER 2007 Dual, 10-Bit, 65MSPS, +3.3V Analog-to-Digital Converter FEATURES 1 DESCRIPTION • Single +3.3V Supply • High SNR: 61.7dBFS at fIN = 5MHz • Total Power Dissipation:

250 mhz IBM PowerPC Processor

Abstract: EMPPC740 interface 740 IBM PowerPC 740 reference manual emppc750 IBM PowerPC 250 EMPPC750L
Contextual Info: PowerPC 740TM and PowerPC 750TM Embedded Microprocessor Datasheet IBM CMOS 0.20 µm Copper Technology EMPPC740L and EMPPC750L Version 1.51 7/15/99 IBM Microelectronics Division Notices Before using this information and the product it supports, be sure to read the general information on the

K8D3216UBC-pi07

Abstract: K5E5658HCM KAD070J00M KBH10PD00M K5D1257ACM-D090000 samsung ddr2 ram MTBF KBB05A500A K801716UBC k5d1g13acm k5a3281ctm
Contextual Info: Product Selection Guide Memory and Storage April 2005 MEMORY AND STORAGE SECTION A DRAM DDR2 SDRAM DDR SDRAM SDRAM RDRAM NETWORK DRAM MOBILE SDRAM GRAPHICS DDR SDRAM DRAM ORDERING INFORMATION FLASH NAND, OneNAND, NOR FLASH NAND FLASH ORDERING INFORMATION SRAM

Contextual Info: PowerPC 750 SCM RISC Microprocessor PID8p-750 Preface The Pow erPC PID 8p-750 m icroprocessor is an im plem entation of the P o w erP C fam ily of reduced instruc­ tion set com puter RISC m icroprocessors. In this docum ent, the term “ P ID 8p-750” is used as an abbreviation

Contextual Info: IBM PowerPC 750 SCM RISC Microprocessor PID8P-750 Preface The PowerPC PID8p-750 microprocessor is an implementation of the PowerPC family of reduced instruc­ tion set computer RISC microprocessors. In this document, the term “PID8p-750” is used as an abbreviation

LTC3417A

Abstract: LTC3417AEDHC LTC3417AEFE LTC3417AIFE
Contextual Info: LTC3417A Dual Synchronous 1.5A/1A 4MHz Step-Down DC/DC Regulator Description Features High Efficiency: Up to 95% 1.5A/1A Guaranteed Minimum Output Current Synchronizable to External Clock No Schottky Diodes Required Programmable Frequency Operation: 1.5MHz or