362-0 TRANSISTOR Search Results

SD1229-1

Abstract: RF NPN POWER TRANSISTOR 1000 WATT 2 watt carbon resistor THOMSON-CSF, RF TRANSISTOR
Contextual Info: S G S-THOMSON G4C 0 I 7=12=1237 0 0 0 0 0 4 1 T 1~ ' D T ^S3 - / / SOLID STATE MICRUWAVE SD1229-1 THOMSON-CSF COMPONENTS CORPORATION î Montgorrieryville, P A 18936 * Ï215 362-8500 • TWX 510-661-7299 VHF COMMUNICATIONS TRANSISTOR .230 .320 DESCRIPTION

transistor j304

Abstract: thomson microwave transistor
Contextual Info: S G S— THOMSON OSC D | 7 = ^ 2 3 ? OüGQlt.0 7 | ~ 0 T ~ ? 3 ' ûj SOLID STATE MICROWAVE SD1012-3 RF 2128 THOMSON-CSF COMPONENTS CORPORATiON Montgomeryville, P A 18936 • ¡215) 362-8500 ■ TWX 510-661-7299 6 W, 12.5 V VHF POWER TRANSISTOR DESCRIPTION

TACAN transistor

Abstract: transistor Common Base amplifier
Contextual Info: S G S-THOMSON _ T 'Ji d 04C D | T'ìETEB? 0 0 0 0 1 3 3 M -o r SOLID STATE MICROWAVE SD1524 . THOMSON-CSF COMPONENTS CORPORATION | Montgomeryville, PA 18936 • 215 362-8500 » TWX 510-661-7299 MICROWAVE POWER TRANSISTOR IFF, DME, TACAN DESCRIPTION The SSM SD1524 is a gold metalized, silicon NPN power transistor. The

Contextual Info: Ordering num ber:EN 572D SA\YO No.572D 2SA1016,1016K/2SC2362,2362K PNP/ NPN Epitaxial Planar Silicon Transistors High-Voltage Low-Noise Amp _Applications : 2 S A 1 0 1 6 ,1 0 1 6 K 2 S A 1 0 1 6 ,2 S C 2 362 2 S A 1 0 1 6 K ,2 S C 2 3 6 2 K u n i t

2n6080

Abstract: 2N6083 2N6081 2N6084 2N6082 Thomson-CSF
Contextual Info: SOLID STATE MICROWAVE 2N 6 08 0 2N6081 2N 6082 2N 6083 2N 6 08 4 THOMSON-CSF COMPONENTS CORPORATION MontgomeryyiUe, PA 18936 • 215 362-8500 ■ TWX 510-661-7299 VHF COMMUNICATIONS TRANSISTOR DESCRIPTION: This line o f epitaxial silicon NPN-planar transistor is designed primarily

VK200 inductance

Abstract: vk200 vk200 rfc with 6 turns SD1136 inductor vk200 VK200 4B inductor Voltronics Corp. ATC100B uhf transistor amplifier MATERIAL-3M-K-6098
Contextual Info: S G □ 5C d | S —THOMSON 7^237 0GQD17Q T .0 T~ 1? -// SOLID STATE MICROWAVE SD1136 THOMSON-CSF COMPONENTS CORPORATION Montgomeryvilie; PA 18936 * (215 362-8500 • TW X 510-661-7299 10 W, 12.5 V UHF POWER TRANSISTOR DESCRIPTION SSM device type SD1136 is a 12.5 volt epitaxial silicon NPN planar

BF363

Contextual Info: ESC D • ÖSBSbOS Q0Q4M7? ô H S I E 6 T- 3 NPN Silicon RF Transistors - SIEMENS AKTIENGESELLSCHAF - BF 362 BF 363 fo r U H F T V tuners BF 3 6 2 and BF 3 6 3 are NPN silicon planar RF transistors in a plastic package similarto T 0 119

thomson rf transistor

Abstract: thomson microwave transistor sd1013
Contextual Info: 1 S G S-¡-THOMSON DSC D | TTETEB? Q O D Q ltiE r T- 5 ? ' 0 . 7 SOLID STATE MICROWAVE SD1013 THOMSON-CSF COMPONENTS CORPORATION Montgomery ville, PA 18936 • 215 362-8500 ■ TW X 510-661-7299 10 W, 28 V VHF POWER TRANSISTOR DESCRIPTION SSM device type SD1013 is an epitaxial silicon NPN-planar transistor

Contextual Info: TE X AS I NS TRUM E NTS - P RO DUCTION D ATA Tiva TM4C1237H6PZ Microcontroller identical to LM4F132H5QC D ATA SHE E T D S -T M 4C 1237 H6 P Z - 1 4 6 0 2 . 2 6 4 8 S P M S 362 C o p yri g h t 2 0 07-2013 Te xa s In stru me n ts In co rporated Copyright

Contextual Info: S G S— THOMSON OMC 0 | 715^237 aGGGÜS3 b j S O L ID ST A T E M IC R O W A V E S D 1 410 :THOMSON-CSF COMPONENTS CORPORATION L Montgomeryville, PA 18936« 215 362-8500 • TWX 510-661-7299 800 M H z C O M M U N IC A T IO N S T R A N S IS T O R DESCRIPTION

BF362

Abstract: TFK S 741 gain bandwidth product TFK 03 BF363
Contextual Info: BF 362 * BF 363 Silízium-NPN-HF-Planar-Transistoren Silicon NPN RF Planar Transistors Anwendungen: BF 362: Regelbare UHF/VHF-Eingangsstufen BF 363: Selbstschw ingende M ischerstufen Applications: BF 362: Gain co ntrolled UHF/VHF input stages BF 363: S elf oscillating m ixer stages

RAYTHEON

Abstract: Raytheon Company RMPA61810 2 watt rf transistor
Contextual Info: RMPA61810 Single Channel 6-18 GHz 1 Watt Power Amplifier MMIC PRELIMINARY INFORMATION Description Features The Raytheon RMPA61810 is a fully monolithic power amplifier operating over the 6.0 to 18.0 GHz frequency band. The amplifier uses a .25 micron Pseudomorphic High Electron Mobility Transistor PHEMT process to maximize

smd transistor 2f

Abstract: 330 smd transistor 2sk 168 K2663 smd TRANSISTOR code 2F 2SJ 162 m 147 smd transistor s4vb 10 73 SMD CODE TRANSISTOR 2SK smd transistor 1Z
Contextual Info: Basic Ordering and Packing Form Explanation of Packing Lists I.Type No. Exam ple 1 D 1N □ Exam ple 2 2 S K 2663 - Reverse voltage X l/1 0 . I -JEITA No. -JEITA Classification. 2SA, 2SB, 2SC, 2SD: Transistor 2SJ, 2SK: M OSFFT 2.C ode No. The code specify each packing form.

25 uF capacitor

Abstract: RAYTHEON RMPA61800
Contextual Info: RMPA61800 Dual-Channel 6-18 GHz 2 Watt Power Amplifier MMIC PRELIMINARY INFORMATION Description Features The Raytheon RMPA61800 is a fully monolithic dual channel power amplifier operating over the 6.0 to 18.0 GHz frequency band. The amplifier uses a .25 micron Pseudomorphic High Electron Mobility Transistor PHEMT

RAYTHEON

Abstract: RMPA61810 25 uF capacitor
Contextual Info: RMPA61810 Single Channel 6-18 GHz 1 Watt Power Amplifier MMIC PRODUCT INFORMATION Description Features The Raytheon RMPA61810 is a fully monolithic power amplifier operating over the 6.0 to 18.0 GHz frequency band. The amplifier uses a 0.25 micron Pseudomorphic High Electron Mobility Transistor PHEMT process to maximize

9452

Abstract: RAYTHEON RMPA61800 amplifier TRANSISTOR 12 GHZ
Contextual Info: RMPA61800 Dual-Channel 6-18 GHz 2W MMIC Power Amplifier The Raytheon RMPA61800 is a fully monolithic power amplifier operating over the 6.0 to 18.0 GHz frequency band. The amplifier uses a .25 micron Pseudomorphic High Electron Mobility Transistor PHEMT process to

Contextual Info: PACKAGE OUTLINES Page SOTIOO 348 SOT122A 349 SOT422A 350 SOT423A 351 SOT437A 352 SOT439A 353 SOT440A 354 SOT441A 355 SOT442A 356 SOT443A 357 SOT445A 358 SOT445B 359 SOT446A 360 SOT447A 361 SOT448A 362 SOT469A 363 Philips Semiconductors Microwave transistors

ZETEX T1049

Abstract: T1049 ZDT1049 DSA003723
Contextual Info: SM-8 DUAL NPN MEDIUM POWER HIGH GAIN TRANSISTORS ZDT1049 ISSUE 1 – JANUARY 1996 C1 B1 C1 E1 C2 B2 C2 E2 SM-8 8 LEAD SOT223 PARTMARKING DETAIL – T1049 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage VCBO 80 V Collector-Emitter Voltage

ADE-602-025

Abstract: ADE-702-186 Hitachi DSA00276 ade 3800 capacitive proximity sensor ADE-702-246 ADE-602-238
Contextual Info: Hitachi Single-Chip Microcomputer H8/3597 F-ZTATTM Hardware Manual ADE-602-238 Rev 1.0 03/16/01 Hitachi, Ltd. Rev. 3.0, 03/01, page ii of xxvi Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent, copyright, trademark, or other intellectual property rights for information contained in

PCB Rogers RO4003

Abstract: RAYTHEON RMPA1951-102 RO4003 23ACPR
Contextual Info: RMPA1951-102 3V PCS CDMA Power Amplifier Module Description Features The RMPA1951-102 is a small-outline, power amplifier module PAM for CDMA Personal Communication System (PCS) and Wireless Local Loop (WLL) applications. Advanced DC power management provides an effective

RAYTHEON

Abstract: RMPA2550-252 54Mbps IC155
Contextual Info: Raytheon RMPA2550-252 RF Components 2.4-2.5 GHz and 5.15-5.35 GHz Dual Band InGaP HBT Linear Power Amplifier ADVANCED INFORMATION Description Features Absolute Ratings1 The RMPA2550-252 is a dual frequency band power amplifier designed for high performance WLAN

LLV1005FB10NJ

Abstract: RAYTHEON GRM21BR60J106K LLV1005FB15NJ RMPA5251 RMPA5251-251 grm39
Contextual Info: RMPA5251-251 Raytheon RF Components 4.90 - 5.85 GHz InGaP HBT Linear Power Amplifier ADVANCED INFORMATION Description Features Electrical Characteristics1 The RMPA5251-251 power amplifier is designed for high performance WLAN applications in the 4.9 to 5.35 and 5.15 to 5.85 GHz frequency bands. The low profile 16 pin 3 x 3 x 0.9 mm package with

Rogers RO4003

Abstract: RAYTHEON RMPA1951-102 RO4003 ktc 1950
Contextual Info: RMPA1951-102 3V PCS CDMA Power Amplifier Module Description Features The RMPA1951-102 is a small-outline, power amplifier module PAM for CDMA Personal Communication System (PCS) and Wireless Local Loop (WLL) applications. Advanced DC power management provides an effective

RAYTHEON

Abstract: CDMA2000-1X RMPA0953-103 transistor 2001 hi
Contextual Info: RMPA0953-103 3V Cellular AMPS and CDMA Power Amplifier Module with Digital Bias Control ADVANCED INFORMATION Description Features The RMPA0953-103 power amplifier module PAM for AMPS, CDMA and CDMA2000-1X Cellular applications. The PAM is internally matched to 50 ohms to minimize the use of external components. Advanced DC power