362-0 TRANSISTOR Search Results

2N5591

Abstract: 2N5590 2N5589 transistor 2N5589 2n5591_
Contextual Info: S G S-"THOMSON Q5C Q | ?cia clS 3 7 T-JS'-u 0 0 0 0 jb fl2 SOLID STATE MICROWAVE 2N 5589 2N 5590 2N5591 THOMSON-CSF COMPONENTS CORPORATION Montgomeryviile, PA 18936 • 215 362-8500 ■ T W X 510-661-7299 3 W /1 0 W /2 4 W, 12.5 V VHF POWER TRANSISTOR DESCRIPTION:

Contextual Info: 2SA1362 T O SH IB A 2 S A 1 362 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm LOW FREQUENCY POWER AMPLIFIER APPLICATIONS. POWER SWITCHING APPLICATIONS. • • + 0 .5 2 . 5 - 0 .3 High DC Current Gain : hpE —120~400 Low Saturation Voltage

Contextual Info: Ordering num ber:EN 572D SA\YO No.572D 2SA1016,1016K/2SC2362,2362K PNP/ NPN Epitaxial Planar Silicon Transistors High-Voltage Low-Noise Amp _Applications : 2 S A 1 0 1 6 ,1 0 1 6 K 2 S A 1 0 1 6 ,2 S C 2 362 2 S A 1 0 1 6 K ,2 S C 2 3 6 2 K u n i t

BF363

Contextual Info: ESC D • ÖSBSbOS Q0Q4M7? ô H S I E 6 T- 3 NPN Silicon RF Transistors - SIEMENS AKTIENGESELLSCHAF - BF 362 BF 363 fo r U H F T V tuners BF 3 6 2 and BF 3 6 3 are NPN silicon planar RF transistors in a plastic package similarto T 0 119

Contextual Info: TE X AS I NS TRUM E NTS - P RO DUCTION D ATA Tiva TM4C1237H6PZ Microcontroller identical to LM4F132H5QC D ATA SHE E T D S -T M 4C 1237 H6 P Z - 1 4 6 0 2 . 2 6 4 8 S P M S 362 C o p yri g h t 2 0 07-2013 Te xa s In stru me n ts In co rporated Copyright

ferroxcube ferrite beads

Abstract: N15W N25W thomson microwave transistor 2N5946 N5946 TWX510 THOMSON-CSF electrolytic vk 200 N30W
Contextual Info: □4C D I 7 ^ 5 3 7 ' S G S-THOMSON T- ss - t t 00000^5 0 l > SSM S O L ID ST A T E M IC R O W A V E 2 N 5 9 4 6 ; !r THQMSON-CSF COMPONENTS CORPORATION I;Montgomeryvilie, PA 18936• 215 362-8500■ TWX510-661-7299 UHF C O M M U N IC A T IO N S T RA N SISTO R

BF362

Abstract: TFK S 741 gain bandwidth product TFK 03 BF363
Contextual Info: BF 362 * BF 363 Silízium-NPN-HF-Planar-Transistoren Silicon NPN RF Planar Transistors Anwendungen: BF 362: Regelbare UHF/VHF-Eingangsstufen BF 363: Selbstschw ingende M ischerstufen Applications: BF 362: Gain co ntrolled UHF/VHF input stages BF 363: S elf oscillating m ixer stages

RAYTHEON

Abstract: Raytheon Company RMPA61810 2 watt rf transistor
Contextual Info: RMPA61810 Single Channel 6-18 GHz 1 Watt Power Amplifier MMIC PRELIMINARY INFORMATION Description Features The Raytheon RMPA61810 is a fully monolithic power amplifier operating over the 6.0 to 18.0 GHz frequency band. The amplifier uses a .25 micron Pseudomorphic High Electron Mobility Transistor PHEMT process to maximize

25 uF capacitor

Abstract: RAYTHEON RMPA61800
Contextual Info: RMPA61800 Dual-Channel 6-18 GHz 2 Watt Power Amplifier MMIC PRELIMINARY INFORMATION Description Features The Raytheon RMPA61800 is a fully monolithic dual channel power amplifier operating over the 6.0 to 18.0 GHz frequency band. The amplifier uses a .25 micron Pseudomorphic High Electron Mobility Transistor PHEMT

GSM9004

Abstract: gsm module micro DCS1800 GSM900 RMPA1955-99
Contextual Info: RMPA1955-99 3V Dual-Band GSM Power Amplifier Module ADVANCED INFORMATION Description Features The RMPA1955-99 is a Dual-band GSM Power Amplifier PA Module which uses Raytheon’s Heterojunction Bipolar Transistor (HBT) PA MMICs and a CMOS control circuit. The fully integrated lead-less chip carrier module

gsm signal amplifier circuit diagram

Abstract: GSM module circuit diagram MAX 8778 Power Amplifier Module for GSM RAYTHEON GSM module DCS1800 GSM900 RMPA1955-99 BW-100
Contextual Info:
 Raytheon Commercial Electronics RMPA1955-99 3V Dual-Band GSM Power Amplifier Module Description The RMPA1955-99 is a Dual-band GSM Power Amplifier PA Module which uses Raytheon’s Heterojunction Bipolar Transistor (HBT) PA MMICs and a CMOS control circuit. The fully integrated lead-less chip carrier module

ZETEX T1049

Abstract: T1049 ZDT1049 DSA003723
Contextual Info: SM-8 DUAL NPN MEDIUM POWER HIGH GAIN TRANSISTORS ZDT1049 ISSUE 1 – JANUARY 1996 C1 B1 C1 E1 C2 B2 C2 E2 SM-8 8 LEAD SOT223 PARTMARKING DETAIL – T1049 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage VCBO 80 V Collector-Emitter Voltage

ADE-602-025

Abstract: ADE-702-186 Hitachi DSA00276 ade 3800 capacitive proximity sensor ADE-702-246 ADE-602-238
Contextual Info: Hitachi Single-Chip Microcomputer H8/3597 F-ZTATTM Hardware Manual ADE-602-238 Rev 1.0 03/16/01 Hitachi, Ltd. Rev. 3.0, 03/01, page ii of xxvi Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent, copyright, trademark, or other intellectual property rights for information contained in

NEC D 553 C

Abstract: TRANSISTOR MAC 223 NEC IC D 553 C
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC4957 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS MINI MOLD FEATURES • Low Noise, High Gain PACKAGE DIMENSIONS • Low Voltage Operation in millimeters • Low Feedback Capacitance C re = 0.3 pF TYP.

CDMA2000-1X

Abstract: RAYTHEON RMPA1956-103
Contextual Info: RMPA1956-103 - 3.5 V Dual Band Tri-Mode AMPS, CDMA & CDMA2000-1X Power Amplifier Module RF Components PRODUCT INFORMATION Description Features The RMPA1956-103 is a power amplifier for AMPS, CDMA and CDMA2000-1X personal communications system PCS applications. The PA operates over both the Cellular and PCS bands.

PCB Rogers RO4003

Abstract: RAYTHEON RMPA1951-102 RO4003 23ACPR
Contextual Info: RMPA1951-102 3V PCS CDMA Power Amplifier Module Description Features The RMPA1951-102 is a small-outline, power amplifier module PAM for CDMA Personal Communication System (PCS) and Wireless Local Loop (WLL) applications. Advanced DC power management provides an effective

RAYTHEON

Abstract: RMPA2550-252 54Mbps IC155
Contextual Info: Raytheon RMPA2550-252 RF Components 2.4-2.5 GHz and 5.15-5.35 GHz Dual Band InGaP HBT Linear Power Amplifier ADVANCED INFORMATION Description Features Absolute Ratings1 The RMPA2550-252 is a dual frequency band power amplifier designed for high performance WLAN

RAYTHEON

Abstract: RMPA1751-102 RO4003
Contextual Info: RMPA1751-102 3V PCS CDMA Power Amplifier Module Description Features The RMPA1751-102 is a small-outline, power amplifier module PAM for Korean-band CDMA Personal Communication System (PCS) and Wireless Local Loop (WLL) applications. Advanced DC power management

LLV1005FB10NJ

Abstract: RAYTHEON GRM21BR60J106K LLV1005FB15NJ RMPA5251 RMPA5251-251 grm39
Contextual Info: RMPA5251-251 Raytheon RF Components 4.90 - 5.85 GHz InGaP HBT Linear Power Amplifier ADVANCED INFORMATION Description Features Electrical Characteristics1 The RMPA5251-251 power amplifier is designed for high performance WLAN applications in the 4.9 to 5.35 and 5.15 to 5.85 GHz frequency bands. The low profile 16 pin 3 x 3 x 0.9 mm package with

Rogers RO4003

Abstract: RAYTHEON RMPA1951-102 RO4003 ktc 1950
Contextual Info: RMPA1951-102 3V PCS CDMA Power Amplifier Module Description Features The RMPA1951-102 is a small-outline, power amplifier module PAM for CDMA Personal Communication System (PCS) and Wireless Local Loop (WLL) applications. Advanced DC power management provides an effective

RMPA1951-102

Abstract: RO4003
Contextual Info: RMPA1951-102 RF Components 3V PCS CDMA Power Amplifier Module PRODUCT INFORMATION Description Features The RMPA1951-102 is a small-outline, power amplifier module PAM for CDMA Personal Communication System (PCS) and Wireless Local Loop (WLL) applications. Advanced DC power

RAYTHEON

Abstract: RMPA0951-102 RO4003 PA0951
Contextual Info: Raytheon Raytheon Commercial Electronics RMPA0951-102 3V Cellular CDMA Power Amplifier Module The RMPA0951-102 is a dual mode, small outline power amplifier module for Cellular CDMA personal communication system applications. The Power Amplifier Module is internally-matched to 50 ohms and DC blocked which

RAYTHEON

Abstract: RMPA0951-102 RO4003 CMDA
Contextual Info: RMPA0951-102 3V Cellular CDMA Power Amplifier Module ADVANCED INFORMATION Description Features The RMPA0951-102 is a dual mode, small-outline power amplifier module PAM for Cellular CDMA personal communication system applications. The PA is internally-matched to 50 ohms and DC blocked which minimizes the

2SC1953

Abstract: 2SA914 2SG1953
Contextual Info: Power Transistors 2SG1953 2SC1953 Silicon N P N Epitaxial P lan ar Type A F Pow er Pre-A m plifier C om plem entary Pair with 2 S A 9 1 4 P ackage Dim ensions . • F eatures • High cdllector-emitter voltage V ceo • Small collector output capacitance (C„b)