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TE Connectivity CLWG-360-NC4 LINEAR POT 5K M12 4M
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	CLWG-360-NC4	Bulk			1	1 $939.61 10 $939.61 100 $939.61 1000 $939.61 10000 $939.61	Buy Now
Avnet Americas	CLWG-360-NC4	Bag		6 Weeks	1	1 $844.57 10 $737.62 100 $726.38 1000 $726.38 10000 $726.38	Buy Now
Mouser Electronics	CLWG-360-NC4					1 $939.61 10 $939.61 100 $939.61 1000 $939.61 10000 $939.61	Get Quote
Master Electronics	CLWG-360-NC4					1 $821.11 10 $748.85 100 $748.85 1000 $748.85 10000 $748.85	Buy Now
ABB Low Voltage Products and Systems EHDBCK360-NC CONTACT KIT
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
RS	EHDBCK360-NC	Bulk			1	1 $2478.70 10 $2354.77 100 $2354.77 1000 $2354.77 10000 $2354.77	Get Quote

360NC Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
HFA140MD60D Abstract: IRFP250 Contextual Info: PD-40010 01/99 HFA140MD60D HEXFRED Ultrafast, Soft Recovery Diode TM Features Reduced RFI and EMI Reduced Snubbing Extensive Characterization of Recovery Parameters Anode 1 AC Cathode 2 Isolated Base VR = 600V VF typ. = 1.2V IF(AV) = 140A Qrr(typ.) = 360nC	Original	PD-40010 HFA140MD60D 360nC HFA140MD60D IRFP250	PDF
52N50C3 Abstract: s4615 SPW52N50C3 Contextual Info: SPW52N50C3 Final data Cool MOS Power Transistor Feature VDS @ Tjmax 560 V RDS on 0.07 Ω ID 52 A • New revolutionary high voltage technology • Worldwide best RDS(on) in TO 247 • Ultra low gate charge P-TO247 • Periodic avalanche rated • Extreme dv/dt rated	Original	SPW52N50C3 P-TO247 Q67040-S4615 52N50C3 52N50C3 s4615 SPW52N50C3	PDF
Contextual Info: SPW52N50C3 CoolMOS Power Transistor Feature • New revolutionary high voltage technology VDS @ Tjmax 560 V RDS on 0.07 Ω ID 52 A • Worldwide best RDS(on) in TO-247 PG-TO247 • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated	Original	SPW52N50C3 O-247 PG-TO247 52N50C3 009-134-A	PDF
HFA140MD60D Abstract: IRFP250 Contextual Info: PD - HFA140MD60D HEXFRED Ultrafast, Soft Recovery Diode TM Features Reduced RFI and EMI Reduced Snubbing Extensive Characterization of Recovery Parameters LUG LUG LUG Anode AC Cathode TERMINAL TERMINAL TERMINAL 1 1 CATHODE ANODE 2 2 ANODE BASE ISOLATED	Original	HFA140MD60D 360nC HFA140MD60D IRFP250	PDF
52n50c3 Abstract: SPW52N50C3 Contextual Info: SPW52N50C3 CoolMOS Power Transistor Feature • New revolutionary high voltage technology • Worldwide best RDS on in TO-247 VDS @ Tjmax 560 V RDS(on) 0.07 Ω ID 52 A • Ultra low gate charge PG-TO247 • Periodic avalanche rated • Extreme dv/dt rated	Original	SPW52N50C3 O-247 PG-TO247 52N50C3 009-134-A 52n50c3 SPW52N50C3	PDF
52N50C3 Abstract: SPW52N50C3 Contextual Info: SPW52N50C3 Cool MOS Power Transistor Feature VDS @ Tjmax 560 V RDS on 0.07 Ω ID 52 A • New revolutionary high voltage technology • Worldwide best RDS(on) in TO 247 PG-TO247 • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated	Original	SPW52N50C3 PG-TO247 Q67040-S4615 52N50C3 52N50C3 SPW52N50C3	PDF
52n50c3 Abstract: SPW52N50 Contextual Info: SPW52N50C3 Final data Cool MOS Power Transistor Feature VDS @ Tjmax 560 V RDS on 0.07 Ω ID 52 A • New revolutionary high voltage technology • Worldwide best R DS(on) in TO 247 • Ultra low gate charge P-TO247 • Periodic avalanche rated • Extreme dv/dt rated	Original	SPW52N50C3 P-TO247 Q67040-S4615 52N50C3 52n50c3 SPW52N50	PDF
s4615 Abstract: 52N50C3 SPW52N50C3 Contextual Info: SPW52N50C3 Cool MOS Power Transistor Feature VDS @ Tjmax 560 V RDS on 0.07 Ω ID 52 A • New revolutionary high voltage technology • Worldwide best RDS(on) in TO 247 PG-TO247 • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated	Original	SPW52N50C3 PG-TO247 Q67040-S4615 52N50C3 009-134-A O-247 s4615 52N50C3 SPW52N50C3	PDF
1100nC Abstract: HFA140MD60C IRFP250 Contextual Info: PD - 40009 rev. A 01/99 HFA140MD60C HEXFRED TM Ultrafast, Soft Recovery Diode Features Reduced RFI and EMI Reduced Snubbing Extensive Characterization of Recovery Parameters LUG LUG LUG TERMINAL TERMINAL TERMINAL ANODE 1 CATHODE ANODE 2 Isolated Base	Original	HFA140MD60C 360nC 1100nC HFA140MD60C IRFP250	PDF
52n50c3 Abstract: s4615 SPW52N50C3 Contextual Info: SPW52N50C3 Cool MOS Power Transistor Feature VDS @ Tjmax 560 V RDS on 0.07 Ω ID 52 A • New revolutionary high voltage technology • Worldwide best RDS(on) in TO 247 P-TO247 • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated	Original	SPW52N50C3 P-TO247 Q67040-S4615 52N50C3 52n50c3 s4615 SPW52N50C3	PDF
Contextual Info: SPW52N50C3 Cool MOS Power Transistor Feature VDS @ Tjmax 560 V RDS on 0.07 Ω ID 52 A • New revolutionary high voltage technology • Worldwide best RDS(on) in TO 247 PG-TO247 • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated	Original	SPW52N50C3 PG-TO247 SPW52N50C3 Q67040-S4615 52N50C3	PDF
Contextual Info: SPW52N50C3 Cool MOS Power Transistor Feature VDS @ Tjmax 560 V RDS on 0.07 Ω ID 52 A • New revolutionary high voltage technology • Worldwide best RDS(on) in TO 247 PG-TO247 • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated	Original	SPW52N50C3 PG-TO247 SPW52N50C3 Q67040-S4615 52N50C3	PDF
HFA140MD60C Abstract: IRFP250 Contextual Info: PD - 4.009 HFA140MD60C HEXFRED Ultrafast, Soft Recovery Diode TM Features Reduced RFI and EMI Reduced Snubbing Extensive Characterization of Recovery Parameters LUG LUG LUG TERMINAL TERMINAL TERMINAL ANODE 1 CATHODE ANODE 2 BASE ISOLATED VR = 600V	Original	HFA140MD60C 360nC HFA140MD60C IRFP250	PDF