35SL Search Results

TIM5964-35SL

Contextual Info: TOSHIBA TIM5964-35SL MICROWAVE POWER GaAs FET PRELIMINARY Features • Low intermodulation distortion - IM3 = -45 dBc at Po = 35.0 dBm • High power - P1dB = 45.5 dBm at 5.9 to 6.4 GHz • High efficiency - ηadd = 37% at 5.9 to 6.4 GHz • High gain - G1dB = 8.0 dB at 5.9 to 6.4 GHz

TIM5359-35SL

Contextual Info: TIM5359-35SL FE A TU R E S : • HIGH EFFICIENCY ■ LOW INTERMODULATION DISTORTION rjadd = 38% at 5.3 to 5.9 GHz IM3 = -45dB c at Po = 35.0dBm ■ HIGH GAIN ■ HIGH POWER G ldB = 8.5 dB at 5.3 to 5 .9 GHz PldB = 45.5dBm at 5.3 to 5.9 GHz ■ BROAD BAND INTERNALLY MATCHED

Contextual Info: TO SHIBA MICROWAVE POWER GaAs FE" MICROWAVE SEMICONDUCTOR TIM5053-35SL TECHNICAL DATA FEATURES : • LOW INTERMODULATION DISTORTION ■ HIGH EFFICIENCY IMS » -45dBo at Po » 35.tídBm rjadd a 38« a t S. 0 to 5. 3GHz ■ HIGH POWER ■ HIGH GAIN GldB s 9. OdB at 5.0 to 5.3GHz

TIM5964-35SLA

Contextual Info: TOSHIBA MICROWAVE POWER G aAs FET M ICRO W AVE SEM IC O N D U C TO R TIM5964-35SLA TECHNICAL DATA a FEATURES : HIGH EFFICIENCY • LOW INTERMODULATION DISTORTION T add = 39% at 5.9 to 6.4GHz IM3 = -45dBc at Po = 35.0dBm ■ HIGH POWER HIGH GAIN GldB = 9.0 dB at 5.9 to 6.4GHz

Contextual Info: February 6, 1997 T1M5964-35SLA-151 1. RF PERFORMANCE SPECIFICATIONS CHARACTERISTICS SYMBOL Output Power at 1dB Ta= 25 °C CONDITION PidB MIN. TYP. MAX. UNIT 45.0 45.5 7.0 8.0 — dBm Com pression Point Pow er Gain at 1dB G id B Com pression Point V d S= 10V

TIM7785-35SL

Contextual Info: MICROWAVE POWER GaAs FET TIM7785-35SL MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES „ LOW INTERMODULATION DISTORTION IM3=-45 dBc at Po= 35.0dBm, Single Carrier Level „ HIGH POWER P1dB=45.5dBm at 7.7GHz to 8.5GHz „ HIGH GAIN G1dB=6.0dB at 7.7GHz to 8.5GHz

TIM7785-35SL

Contextual Info: MICROWAVE POWER GaAs FET TIM7785-35SL MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES n LOW INTERMODULATION DISTORTION IM3=-45 dBc at Po= 35.0dBm, Single Carrier Level n HIGH POWER P1dB=45.5dBm at 7.7GHz to 8.5GHz n HIGH GAIN G1dB=6.0dB at 7.7GHz to 8.5GHz

TIM6472-35SL

Contextual Info: MICROWAVE POWER GaAs FET TIM6472-35SL MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES n LOW INTERMODULATION DISTORTION IM3=-45 dBc at Pout= 35.0dBm Single Carrier Level n HIGH POWER P1dB=45.5dBm at 6.4GHz to 7.2GHz n HIGH GAIN G1dB=8.0dB at 6.4GHz to 7.2GHz

596435SL

Contextual Info: T O S H IB A MICROWAVE POWER GaAs F ET M IC R O W A V E S E M IC O N D U C T O R TIM 5964-35SLA TEC H N IC A L DATA PRELIMINARY FEATURES : • LO W IN T E R M O D U L A T IO N D IS T O R T IO N ■ HIGH E F F IC IE N C Y T]add = 39% at 5 .9 to 3 .4 G H z IM3 = - 45d 3 c at Po = 3 5 .0 d B m

Contextual Info: June 1997 PRELIMINARY TIM7785-35SL TIM 7785-35SL CHARACTERISTICS SYMBOL Output Power at 1dB CONDITION PidB MIN. TYP. MAX. UNIT 45.0 45.5 — dBm 5.0 6.0 — dB Compression Point Power Gain at 1dB GidB VDS= 10V f=7.7-8.5 GHz Compression Point Drain Current

596435SL

Abstract: 5964-35SLA
Contextual Info: TOSHIBA MICROWAVE POWER G aAs FET M ICRO W AVE SEM IC O N D U C TO R TIM5964-35SLA TECHNICAL DATA a FEATURES : • HIGH EFFICIENCY ■ LOW INTERMODULATION DISTORTION T add = 39% at 5.9 to 6.4GHz IM3 = -45d B c at Po = 35.0dBm ■ HIGH POWER ■ HIGH GAIN GldB = 9 .0 dB at 5.9 to 6.4GHz

tim5964-35sla-422

Contextual Info: MICROWAVE POWER GaAs FET TIM5964-35SLA-422 MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES n LOW INTERMODULATION DISTORTION IM3=-45 dBc at Po= 35.0dBm, Single Carrier Level n HIGH POWER P1dB=45.5dBm at 5.85GHz to 6.75GHz n HIGH GAIN G1dB=8.0dB min. at 5.85GHz to 6.75GHz

Contextual Info: TIM5359-35SL FEATURES : • LOW INTERMODULATION DISTORTION ■ HIGH EFFICIENCY Tjadd = 38% at 5.3 to 5.9GHz IM3 = -45dBc at Po = 35.0dBm ■ HIGH GAIN ■ HIGH POWER GldB =8.5 dB at 5.3 to 5.9GHz PldB = 45.5dBm at 5.3 to 5 9 GHz ■ BROAD BAND INTERNALLY MATCHED

Contextual Info: TOSHIBA MICROWAVE POWER GaAs MICROWAVE SEMICONDUCTOR TIM5359 — 35SL TECHNICAL DATA FEATURES : HIGH EFFICIENCY • LOW INTERMODULATION DISTORTION T]add = 3 8 % at IM3 = -45d B c at Po = 35.0dB m to 5.9 GHz 5.3 HIGH GAIN ■ HIGH POWER P 1 dB = 45.5dB m at

Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET MICROWAVE SEMICONDUCTOR TIM5964-35SL TECHNICAL DATA FEATURES : • HIGH EFFICIENCY ■ LOW INTERMODULATION DISTORTION T|add = 37% at 5.9 to 6.4GHz IM3 = -45dBc at Po = 35.0dBm ■ HIGH GAIN ■ HIGH POWER GldB = 8.0dB at 5.9 to 6.4GHz

TIM5964-35SLA

Contextual Info: MICROWAVE POWER GaAs FET TIM5964-35SLA MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES „ LOW INTERMODULATION DISTORTION IM3=-45 dBc at Po= 35.0dBm, Single Carrier Level „ HIGH POWER P1dB=45.5dBm at 5.9GHz to 6.4GHz „ HIGH GAIN G1dB=9.0dB at 5.9GHz to 6.4GHz

TIM5053-35SL

Contextual Info: MICROWAVE POWER GaAs FET TIM5053-35SL MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES n LOW INTERMODULATION DISTORTION IM3=-45 dBc at Pout= 35dBm Single Carrier Level n HIGH POWER P1dB=45.5dBm at 5.0GHz to 5.3GHz n HIGH GAIN G1dB=9.0dB at 5.0GHz to 5.3GHz

TIM5964-35SLA

Contextual Info: MICROWAVE POWER GaAs FET TIM5964-35SLA MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES n LOW INTERMODULATION DISTORTION IM3=-45 dBc at Po= 35.0dBm, Single Carrier Level n HIGH POWER P1dB=45.5dBm at 5.9GHz to 6.4GHz n HIGH GAIN G1dB=9.0dB at 5.9GHz to 6.4GHz

Contextual Info: TIM5359-35SL FEATURES : • HIGH EF F IC IEN C Y ■ LOW INTERMODULATION DISTORTION T|add = 38% at 5.3 to 5.9 GHz IM3 = -45dBc at Po = 35.0dBm ■ HIGH GAIN ■ HIGH PO W ER G ld B = 8.5 dB at 5.3 to 5.9GHz P ld B = 45.5dBm at 5.3 to 5.9 GHz ■ B R O A D B A N D IN T E R N A LLY M ATCH ED

Contextual Info: June PRELIMINARY TIM7785-35SL TIM7785-35SL CHARACTERISTICS SYMBOL Output Power at 1dB CONDITION PidB MIN. TYP. MAX. UNIT 45.0 45.5 — dBm 5.0 6.0 — dB Compression Point Power Gain at 1dB GidB Compression Point VDS= 10V f=7.7-8.5 GHz Drain Current IDS1 —

TIM4450-35SL

Contextual Info: MICROWAVE POWER GaAs FET TIM4450-35SL MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES „ LOW INTERMODULATION DISTORTION IM3=-45 dBc at Po= 35.0dBm, Single Carrier Level „ HIGH POWER P1dB=45.5dBm at 4.4GHz to 5.0GHz „ HIGH GAIN G1dB=9.5dB at 4.4GHz to 5.0GHz

TIM6472-35SL

Contextual Info: MICROWAVE POWER GaAs FET TIM6472-35SL MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES „ LOW INTERMODULATION DISTORTION „ HIGH GAIN IM3=-45 dBc at Pout= 35.0dBm G1dB=8.0dB at 6.4GHz to 7.2GHz „ BROADBAND INTERNALLY MATCHED „ HERMETICALLY SEALED PACKAGE

675g

Abstract: TIM5964-35SLA-422
Contextual Info: MICROWAVE POWER GaAs FET TIM5964-35SLA-422 MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES n LOW INTERMODULATION DISTORTION IM3=-45 dBc at Po= 35.0dBm, Single Carrier Level n HIGH POWER P1dB=45.5dBm at 5.85GHz to 6.75GHz n HIGH GAIN G1dB=8.0dB min. at 5.85GHz to 6.75GHz

TIM7785-35SL

Contextual Info: June 1997 PRELIMINARY TIM 7785-35SL T IM 7785-35S L CHARACTERISTICS SYMBOL Output Power at 1dB CONDITION PidB MIN. TYP. MAX. UNIT 45.0 45.5 — dBm 5.0 6.0 — dB — 8.0 Compression Point Power Gain at 1dB GidB Compression Point VDS= 10V f=7.7 -8 .5 GHz Drain Current