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    35CTC Search Results

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    Taiwan Semiconductor MBRF2035CT C0

    Diode Schottky 35V 20A 3-Pin ITO-220AB Tube - Rail/Tube (Alt: MBRF2035CT C0)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas MBRF2035CT C0 Tube 1,000
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    Taiwan Semiconductor MBR2035CT C0

    Diode Schottky 35V 20A 3-Pin TO-220AB Tube - Rail/Tube (Alt: MBR2035CT C0)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas MBR2035CT C0 Tube 1,000
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    Taiwan Semiconductor MBRF1535CT C0

    Diode Schottky 35V 15A 3-Pin ITO-220AB Tube - Rail/Tube (Alt: MBRF1535CT C0)
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    Avnet Americas MBRF1535CT C0 Tube 1,000
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    Toshiba America Electronic Components SSM3K35CTC,L3F

    - Tape and Reel (Alt: SSM3K35CTC,L3F)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas SSM3K35CTC,L3F Tape & Reel 24 Weeks 10,000
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    Toshiba America Electronic Components SSM3J35CTC,L3F

    - Tape and Reel (Alt: SSM3J35CTC,L3F)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas SSM3J35CTC,L3F Tape & Reel 24 Weeks 10,000
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    35CTC Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: A X tKSB Synthetic Quartz Crystal 1. Crystals. as electronic parts 1. TKJIte. ^•f'nPno £ L T A crystal is a single crystal of silicon dioxide (quartz), ( s n ) JESe^CS 5 l1 t ■ £ L T N £ tzJt^Mnn t L T , & and it is used for mobile and optical communication


    OCR Scan
    35ctcuf93o03gl PDF

    8Z0113

    Abstract: 8Z0117 3E1024B 3A2012B 6A125 3G1062 3A201 3E1014B 3E2011 DC28V
    Contextual Info: 3 s M T SWITCH SERIES % 1 • y □ «y f j — j£ x 'y 7° =; 3V rm 11 M -*U?J J T 'T J in e n r Page 1. The tw o-point contact mechanism enhances contact re­ liability. t£ M < 7 5 if$ !tì£ ittò fc 2 Æ S M ^ * » f f l L f c i a s « î R Î K t i - C


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    a-ac250vdc28vdc20mvac200/iv+14ac1500vac1000vdc500v1000m37jh18z01138z01173e1024b3a2012b6a1253g10623a2013e1014b3e2011 PDF

    S parameters for ATF 10136

    Abstract: ATF-10136-TR2 ATF-10136 ATF10136
    Contextual Info: What mL' KM HEWLETT PA C K A R D ATF-10136 0.5-12 GHz Low Noise Gallium Arsenide FET Features • • • • • • 36 micro-X Package1 Low Noise Figure: 0.5 dB typical at 4 GHz Low Bias: V ds = 2 V, I ds = 20 mA High Associated Gain: 13.0 dB typical at 4 GHz


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    atf-10136s parameters for atf 10136atf-10136-tr2atf10136 PDF

    1014B

    Abstract: 8Z0113
    Contextual Info: 3 s M T SWITCH SERIES % 1 • y □ «y f j — j£ x 'y 7° =; 3V rm 11 M -*U?J J T 'T J in e n r Page 1. The tw o-point contact mechanism enhances contact re­ liability. t£ M < 7 5 if$ !tì£ ittò fc 2 Æ S M ^ * » f f l L f c i a s « î R Î K t i - C


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    a-ac250vdc28vdc10vdc20mv+5ac200/iv37jh1d02604381014b8z0113 PDF

    Contextual Info: GP08A THRU GP08J MINIATURE GLASS PASSIVATED JUNCTION PLASTIC RECTIFIER Voltage - 50 to 600 Volts Current - 0.8 Amperes FEATURES ♦ High temperature metallurgically bonded con­ structed rectifiers ♦ Plastic package ' has Underwriters Laboratory Flammability Classifi­


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    gp08agp08jmil-s-1950035ctc/10+11976and PDF