357 SOT23 Search Results

R-PDSO-G6 land pattern

Abstract: dgs s-pdso-g10 land pattern dgs (s-pdso-g10) land pattern Transim MSOP-10 OPA2357 OPA357 OPA357AIDBVR OPA357AIDBVT OPA357AIDDA
Contextual Info: OPA357 OPA2357 OPA3 57 OPA2 357 SBOS235B – MARCH 2002 – REVISED NOVEMBER 2002 250MHz, Rail-to-Rail I/O, CMOS OPERATIONAL AMPLIFIERS with SHUTDOWN FEATURES DESCRIPTION ● UNITY-GAIN BANDWIDTH: 250MHz ● WIDE BANDWIDTH: 100MHz GBW ● HIGH SLEW RATE: 150V/µs

dgs s-pdso-g10 land pattern

Abstract: R-PDSO-G6 land pattern dgs (s-pdso-g10) land pattern land pattern for msOP 10
Contextual Info: OPA357 OPA2357 OPA3 57 OPA2 357 SBOS235B – MARCH 2002 – REVISED NOVEMBER 2002 250MHz, Rail-to-Rail I/O, CMOS OPERATIONAL AMPLIFIERS with SHUTDOWN FEATURES DESCRIPTION ● UNITY-GAIN BANDWIDTH: 250MHz ● WIDE BANDWIDTH: 100MHz GBW ● HIGH SLEW RATE: 150V/µs

Contextual Info: MMBTA42 NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS Ta = 25°C Characteristic Symbol Rating Unit VcBO 30 0 300 6 500 350 150 357 V V V mA mW °C °C /W Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage

dgs s-pdso-g10 land pattern

Abstract: MPDS035A land pattern
Contextual Info: OPA3 OPA357 OPA2357 57 OPA2 357 SBOS235 – MARCH 2002 250MHz, Rail-to-Rail I/O, CMOS OPERATIONAL AMPLIFIERS with SHUTDOWN FEATURES DESCRIPTION ● ● ● ● ● ● ● The OPA357 series of high-speed, voltage-feedback CMOS operational amplifiers are designed for video and other

KST55

Abstract: 2H2G mark 2H SOT-23 KSP55 KST56
Contextual Info: KST55/56 PNP EPITAXIAL SILICON TRANSISTOR DRIVER TRANSISTOR SOT-23 Î ABSOLUTE MAXIMUM RATINGS TA=25 Characteristic Symbol Rating Unit -60 -80 V V VEBO IC PC T STG -60 -80 -4 -500 350 150 V V V mA mW RTH(j-a) 357 VCBO Collector Base Voltage :KST55 :KST56

KST42

Abstract: KST43
Contextual Info: KST42/43 NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR SOT-23 Î ABSOLUTE MAXIMUM RATINGS TA=25 Characteristic Symbol Rating Unit 300 200 V V VEBO IC PC T STG 300 200 6 500 350 150 V V V mA mW RTH(j-a) 357 VCBO Collector Base Voltage :KST42 :KST43

dgs s-pdso-g10 land pattern

Abstract: dgs (s-pdso-g10) land pattern barcode scanner connection schematic MARKING CF sot23-6 MPDS035A land pattern R-PDSO-G5 LAND video amplifier sot23-6 MSOP-10 OPA2357 OPA357
Contextual Info: OPA357 OPA2357 OPA3 57 OPA2 357 SBOS235A – MARCH 2002 – REVISED JUNE 2002 250MHz, Rail-to-Rail I/O, CMOS OPERATIONAL AMPLIFIERS with SHUTDOWN FEATURES DESCRIPTION ● ● ● ● ● ● ● The OPA357 series of high-speed, voltage-feedback CMOS operational amplifiers are designed for video and other

transistor mark 2D

Abstract: KST92 KST93 ksp92
Contextual Info: KST92/93 PNP EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR SOT-23 Î ABSOLUTE MAXIMUM RATINGS TA=25 Characteristic Symbol Rating Unit -300 -200 V V VEBO IC PC T STG -300 -200 -5 -500 350 150 V V V mA mW RTH(j-a) 357 VCBO Collector Base Voltage :KST92

Contextual Info: KST42/43 NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS TA=25°°C Characteristic Symbol Rating Unit 300 200 V V VEBO IC PC T STG 300 200 6 500 350 150 V V V mA mW °C RTH(j-a) 357 °C/W VCBO Collector Base Voltage

sot23 mark code CB

Abstract: la marking
Contextual Info: KST05/06 NPN EPITAXIAL SILICON TRANSISTOR DRIVER TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS TA=25t: Rating Unit 60 60 V V V V ebo lc Pc T sto 60 80 4 500 350 150 Rm (i-a) 357 C haracteristic Sym bol Collector Base Voltage VcBO :KST0S :KST06 Collector-Em itter Voltage

KST05

Abstract: KSP05 KST06
Contextual Info: KST05/06 NPN EPITAXIAL SILICON TRANSISTOR DRIVER TRANSISTOR SOT-23 Î ABSOLUTE MAXIMUM RATINGS TA=25 Characteristic Symbol Rating Unit 60 80 V V VEBO IC PC T STG 60 80 4 500 350 150 V V V mA mW RTH(j-a) 357 VCBO Collector Base Voltage :KST05 :KST06 Collector-Emitter Voltage

EJ transistor marking sot23

Abstract: EJ transistor marking transistor mark code HF
Contextual Info: KST42/43 NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS TA=25t: Sym bol C haracteristic Collector Base Voltage Rating U nit 300 200 V V Vebo lc Pc T sto 300 200 6 500 350 150 V V V mA mW t: RtH(J-A) 357 tl/w VcBO

Contextual Info: KST55/56 PNP EPITAXIAL SILICON TRANSISTOR DRIVER TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS TA=25°C C haracteristic Symbol Collector Base Voltage Rating Unit -60 -80 V V T stg -60 -80 -4 -500 350 150 V V V mA mW °C R-m(j-a) 357 °C/W V cB O : KST55 : KST56

Contextual Info: KST55/56 PNP EPITAXIAL SILICON TRANSISTOR DRIVER TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS Ta=25°C Symbol Characteristic Collector Base Voltage Rating Unit -6 0 -8 0 V V -6 0 -8 0 -4 -5 0 0 350 150 V V V mA mW °C 357 °CW V cB O KST55 KST56 Collector-Emitter Voltage

MMSD914

Abstract: BAW74 1N4148 1n457a equivalent 1N459a MMBD4148CA 1N4149 1N4150 1N4154 1N4448
Contextual Info: Discrete Small Signal Diodes VRRM Maximum Repetitive Reverse Voltage V IF (av) Average Rectified Forward Current (A) VFM IRM trr Maximum Maximum Instantaneous Instantaneous Reverse Recovery Forward Voltage Reverse Current Time (ns) (V) (uA) Configuration

BAW56

Abstract: cd 5411
Contextual Info: BAW56 SOT23 High Speed Switching Diodes Features: • Silicon planar epitaxial high-speed diodes. • Silicon planar high-speed switching series diode pair. Package Outline Details Pin Configuration 1. Cathode k1 2. Cathode (k2) 3. Anode (a) Dimensions : Millimetres

smd 662 sot23

Abstract: DIODE smd marking A4 smd sot23 A4 smd diode A4 BAV70 358 SOT23 smd 7333 A
Contextual Info: BAV70 SOT23 High Speed Switching Diodes Features: • Silicon planar epitaxial high-speed diodes. • High speed switching diode pair, common cathode. SOT-23 Formed SMD Package Package Outline Details Pin Configuration 1. Anode a1 2. Anode (a2) 3. Cathode (k)

BC858C

Abstract: 2KW sot23
Contextual Info: BC858C SOT23 PNP Transistors Features: • Silicon Planar Epitaxial Transistors. • PNP transistors. Package Outline Details Pin Configuration 1. Base 2. Emitter 3. Collector Marking BC858C = 3L Absolute Maximum Ratings - Symbol Collector–emitter voltage +VBE = 1V

C651

Abstract: CMPT651
Contextual Info: Central CMPT651 TM Semiconductor Corp. SURFACE MOUNT NPN HIGH CURRENT TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPT651 type is a high current NPN Silicon Transistor, epoxy molded in a space saving Power SOT23F surface mount package, designed for high

rgk 13

Abstract: P2d MARKING CODE CMPS5061 CMPS5063 marking code TC CMPS5062 CMPS5064 P2B MARKING CODE MARKING P2D
Contextual Info: Central CMPS5061 CMPS5062 CMPS5063 CMPS5064 Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPS5061 Series types are epoxy molded PNPN Silicon Controlled Rectifiers manufactured in an SOT23 case, designed for control systems and sensing circuit applications.

CMPS5064

Abstract: rgk 13 CMPS5062 CMPS5063 SOT-23 marking 2a CMPS5061 P2B MARKING CODE P2d MARKING CODE P2B SOT23
Contextual Info: Central CMPS5061 CMPS5062 CMPS5063 CMPS5064 Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPS5061 Series types are epoxy molded PNPN Silicon Controlled Rectifiers manufactured in an SOT23 case, designed for control systems and sensing circuit applications.

Contextual Info: ADVANCE INFORMATION All information in this data sheet is preliminary AM AM and subject to change. X F JM y% éF • l / j A I / r l +3V/+5V, High-Speed, Rail-to-Rail, SOT23 Comparators with Shutdown Features ♦ Ultra-Fast 5ns Propagation Delay 5mV overdrive

MARKING 361 sot-23

Contextual Info: Central' CMPS5061 CMPS5062 CMPS5063 CMPS5064 Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPS5061 Series types are epoxy molded PNPN Silicon Controlled Rectifiers manufactured in an SOT23 case, designed for control systems and sensing circuit applications.

P2B marking sot23

Abstract: p2b sot23 P2d MARKING CODE R7 SOT23
Contextual Info: Central" CMPS5061 CMPS5062 CMPS5063 CMPS5064 Semiconductor Corp. DESCRIPTION: SURFACE MOUNT SILICON CONTROLLED RECTIFIER The CENTRAL SEMICONDUCTOR CMPS5061 Series types are epoxy molded PNPN Silicon Controlled Rectifiers manufactured in an SOT23 case, designed for control systems and