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    350N10 Search Results

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    Ampleon C4H2350N10Z

    RF FET Transistor, P Channel, 50 V, 2.3 GHz to 5 GHz, DFN, 4 Pins - Tape and Reel (Alt: C4H2350N10Z)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas C4H2350N10Z Tape & Reel 2,000 16 Weeks 1,000
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    • 1000 $11.23
    • 10000 $10.82
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    Richardson RFPD C4H2350N10Z 1,000
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    onsemi NXH350N100H4Q2F2PG

    SiC Hybrid Module, I-Type NPC 1000 V, 350 A IGBT, 1200 V, 100 A SiC Diode Press-fit pins - Trays (Alt: NXH350N100H4Q2F2PG)
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    Avnet Americas NXH350N100H4Q2F2PG Tray 36
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    • 100 $105.95
    • 1000 $102.12
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    Rochester Electronics NXH350N100H4Q2F2PG 15 1
    • 1 $256.86
    • 10 $256.86
    • 100 $241.45
    • 1000 $226.04
    • 10000 $226.04
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    Flip Electronics NXH350N100H4Q2F2PG 8,027
    • 1 $84.76
    • 10 $84.76
    • 100 $84.76
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    Ampleon C5H2350N10Z

    - Tape and Reel (Alt: C5H2350N10Z)
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    Avnet Americas C5H2350N10Z Tape & Reel 1,000
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    • 1000 $14.64
    • 10000 $14.41
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    Richardson RFPD C5H2350N10Z 1,000
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    Ampleon C5H2350N10X

    C5H2350N10/DFN 4.0X4.5/REELDP - Tape and Reel (Alt: C5H2350N10X)
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    Avnet Americas C5H2350N10X Tape & Reel 3,000
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    Richardson RFPD C5H2350N10X 3,000
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    onsemi NXH350N100H4Q2F2P1G

    Si/SiC Hybrid Module - EliteSiC, I-Type NPC 1000 V, 350 A IGBT, 1200 V, 100 A SiC Diode, Q2 Package Press-fit pins - Trays (Alt: NXH350N100H4Q2F2P1G)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas NXH350N100H4Q2F2P1G Tray 21 Weeks 36
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    Newark NXH350N100H4Q2F2P1G Bulk 1
    • 1 $176.32
    • 10 $169.27
    • 100 $165.74
    • 1000 $165.74
    • 10000 $165.74
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    Richardson RFPD NXH350N100H4Q2F2P1G 36
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    Avnet Asia NXH350N100H4Q2F2P1G 21 Weeks 36
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    Avnet Silica NXH350N100H4Q2F2P1G 22 Weeks 12
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    EBV Elektronik NXH350N100H4Q2F2P1G 23 Weeks 12
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    Flip Electronics NXH350N100H4Q2F2P1G 36
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    Vyrian NXH350N100H4Q2F2P1G 7,775
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    350N10 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    ixun 350n10

    Abstract: 350N10 IXUN350N10
    Contextual Info: IXUN 350N10 Advanced Technical Information VDSS = 100 V ID25 = 350 A Ω typ. RDS(on) = 1.9 mΩ Trench Power MOSFET Very low RDS(on) SOT-227 B, miniBLOC D KS G G S KS S D G = Gate S = Source D = Drain KS = Kelvin Source Features Symbol Conditions VDSS TJ = 25°C to 150°C


    Original
    350n10ot-227ixun 350n10ixun350n10 PDF

    7N60B equivalent

    Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2
    Contextual Info: Contents Page General Contents QA and Environmental Management Systems Alphanumeric Index Symbols and Terms Nomenclature Patents and Intellectual Property I II III XVIII XX XXII CLARE Optically Isolated Solid State Relays Optically Isolated AC-Power Switches


    Original
    ms-01310-pin5m-1994mo-229+107n60b equivalent18n50 equivalentixgh 1499mosfet smd 4407ixdd 614c 547 b w57 bjt transistorr1275ns20lr1271ns12cixys cs 20-22 mof1ixtp 220n04t2 PDF