350MW Search Results
350MW Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
|---|---|---|---|---|---|
| LM4819MBD/NOPB | Texas Instruments | 350mW Audio Power Amplifier with Shutdown Mode |
|
|
|
| LM4819MM/NOPB | Texas Instruments | 350mW Audio Amplifier with Shutdown Mode 8-VSSOP -40 to 85 |
|
|
|
| LM4819MMX/NOPB | Texas Instruments | 350mW Audio Amplifier with Shutdown Mode 8-VSSOP -40 to 85 |
|
|
|
| LM4819MX/NOPB | Texas Instruments | 350mW Audio Amplifier with Shutdown Mode 8-SOIC -40 to 85 |
|
|
|
| LM4818MX/NOPB | Texas Instruments | 350mW Audio Power Amplifier with Shutdown Mode 8-SOIC -40 to 85 |
|
|
350MW Price and Stock
Eaton Cutler-Hammer E2KW3350MWW1200V MINING MCCB 3P 350A MAG ONLY 1250-2500A TRIP RANGE |
|||||||||||
| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
|
E2KW3350MWW | Bulk | 2 Weeks | 1 |
|
Get Quote | |||||
Vishay Intertechnologies 2N7002K-T1-GE3MOSFETs 60V Vds 20V Vgs SOT-23 |
|||||||||||
| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
|
2N7002K-T1-GE3 | Reel | 300,000 | 3,000 |
|
Buy Now | |||||
Vishay Intertechnologies ILD217TTransistor Output Optocouplers Phototransistor Out Dual CTR >100% |
|||||||||||
| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
|
ILD217T | Reel | 128,000 | 2,000 |
|
Buy Now | |||||
Vishay Intertechnologies BAS16-E3-08Small Signal Switching Diodes 75 Volt 0.15 Amp 2.0A IFSM @ 1uS |
|||||||||||
| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
|
BAS16-E3-08 | Reel | 102,000 | 3,000 |
|
Buy Now | |||||
PanJit Semiconductor 2N7002K-R1-00001MOSFETs SOT23 N-CH 60V .3A |
|||||||||||
| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
|
2N7002K-R1-00001 | Reel | 102,000 | 3,000 |
|
Buy Now | |||||
350MW Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
|
Contextual Info: LM4819 LM4819 350mW Audio Power Amplifier with Shutdown Mode Literature Number: SNAS133C LM4819 350mW Audio Power Amplifier with Shutdown Mode General Description Key Specifications The LM4819 is a mono bridged power amplifier that is capable of delivering 350mWRMS output power into a 16Ω load |
Original |
lm4819350mwsnas133c350mwrms | |
ray 40Contextual Info: Plug-In RAY-3+ RAY-3 Frequency Mixer Level 23 LO Power +23 dBm 0.07 to 200 MHz Maximum Ratings Features Operating Temperature -55°C to 100°C Storage Temperature -55°C to 100°C RF Power 350mW IF Current 40mA • excellent conversion loss, 5.53 dB typ. |
Original |
350mw2002/95/ecray 40 | |
28438
Abstract: M121747
|
Original |
350mw2002/95/ec28438m121747 | |
DEVICE MARKING CODE table
Abstract: BZX84C47 BZX84C43 301 marking code sot-23 BZX84C43-7 Marking Code KEY zener diode marking code 30 Zener Diode SOT-23 marking B BZX84C51 J-STD-020A
|
Original |
bzx84c43bzx84c51350mwbzx84c47+8 | |
MMBZ5223B
Abstract: Zener Diode SOT-23 marking kh5 MMBZ5221B MMBZ5225B MMBZ5226B MMBZ5227B MMBZ5228B MMBZ5229B MMBZ5230B MMBZ5231B
|
Original |
mmbz5221bmmbz5259b350mwmmbz5223b+8 | |
|
Contextual Info: DB3-DB3TG 350mW Bi-directional Trigger Diodes Features • • • • • • • • • • VBO : 32V Version Low break-over current DO-35 package JEDEC Hermetically sealed glass Compression bonded construction All external surfaces are corrosion resistant and |
Original |
350mwdo-35mil-std-202 | |
|
Contextual Info: New Au d i o I n t e r fa c e I C A N 2 9 0 6 F J M • Overview 12 22 34 33 11 0.40 0.10 SEATING PLANE 11 44 0.48 5.00±0.10 12 44 (1.10) 0. 1 22 ■ Features ●Speaker amplifier. • BTL amplifier (350mW 8Ω Vcc=3.3V) ●Built-in power-save function. |
Original |
350mwan2906fjm | |
all type zener diode code voltage
Abstract: CMPZ4625 CMPZ4616 5 volts ZENER DIODE zener diode marking code 30 CMPZ4614 CMPZ4615 CMPZ4617 CMPZ4618 CMPZ4619
|
Original |
cmpz4614cmpz4627350mwot-23+13 | |
|
Contextual Info: KST5551 KST5551 Amplifier Transistor • Collector-Emitter Voltage: VCEO=160V • Collector Power Dissipation: PC max =350mW 3 2 1 SOT-23 1. Base 2. Emitter 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted |
Original |
kst5551350mwot-232n5551 | |
MMBT3906 UTCContextual Info: UTC MMBT3906 PNP EPITAXIAL PLANAR TRANSISTOR GENERAL PURPOSE APPLIATION FEATURES *Collector-Emitter Voltage: VCEO=40V *Collector Dissipation: Pc max =350mW *Complementary to MMBT3904 2 1 MARKING 2A 3 SOT-23 1:EMITTER 2:BASE 3:COLLECTOR ABSOLUTE MAXIMUM RATINGS ( Ta=25°C ,unless otherwise specified ) |
Original |
mmbt3906350mwmmbt3904ot-23+2 | |
T9SV1K15-12Contextual Info: General Purpose Relays Power Relays Potter & Brumfield Power PCB Relay T9S Solar n 1 pole 35A, 1 form A NO contact gap >1.5mm n 350mW hold power n Ambient temperature up to 85°C at 35A n The appliance is able to meet VDE V 0126-1-1 n Product in accordance to IEC 60335-1 |
Original |
n350mwnen610952500vrms4000vrms+3 | |
|
Contextual Info: MMBD4448H 0.25A Surface-mount Switching Diode Voltage range 80 Volts 350mW Power Dissipation SOT-23 FEATURES 0.020 0.51 0.015(0.37) Fast switching speed Surface mount package ideally suited for automatic insertion For general purpose switching applications |
Original |
mmbd4448h350mwot-23 | |
|
Contextual Info: Product specification BZX84C27 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 0.4 3 Ideally Suited for Automated Assembly Processes 1 0.55 350mW Power Dissipation +0.1 1.3-0.1 +0.1 2.4-0.1 Planar Die Construction 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 |
Original |
bzx84c27ot-23350mw | |
|
Contextual Info: Product specification BZX84C7V5 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 0.4 3 Ideally Suited for Automated Assembly Processes 1 0.55 350mW Power Dissipation +0.1 1.3-0.1 +0.1 2.4-0.1 Planar Die Construction 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 |
Original |
bzx84c7v5ot-23350mw | |
|
|
|||
|
Contextual Info: Product specification BZX84C4V3 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 0.4 3 Ideally Suited for Automated Assembly Processes 1 0.55 350mW Power Dissipation +0.1 1.3-0.1 +0.1 2.4-0.1 Planar Die Construction 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 |
Original |
bzx84c4v3ot-23350mw | |
BZX84C18Contextual Info: Product specification BZX84C18 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 0.4 3 Ideally Suited for Automated Assembly Processes 1 0.55 350mW Power Dissipation +0.1 1.3-0.1 +0.1 2.4-0.1 Planar Die Construction 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 |
Original |
bzx84c18ot-23350mw | |
|
Contextual Info: Product specification BZX84C3V3 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 0.4 3 Ideally Suited for Automated Assembly Processes 1 0.55 350mW Power Dissipation +0.1 1.3-0.1 +0.1 2.4-0.1 Planar Die Construction 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 |
Original |
bzx84c3v3ot-23350mw | |
|
Contextual Info: Product specification BZX84C16 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 0.4 3 Ideally Suited for Automated Assembly Processes 1 0.55 350mW Power Dissipation +0.1 1.3-0.1 +0.1 2.4-0.1 Planar Die Construction 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 |
Original |
bzx84c16ot-23350mw | |
|
Contextual Info: Product specification BZX84C2V4 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 0.4 3 Ideally Suited for Automated Assembly Processes 1 0.55 350mW Power Dissipation +0.1 1.3-0.1 +0.1 2.4-0.1 Planar Die Construction 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 |
Original |
bzx84c2v4ot-23350mw | |
|
Contextual Info: Product specification BZX84C11 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 0.4 3 Ideally Suited for Automated Assembly Processes 1 0.55 350mW Power Dissipation +0.1 1.3-0.1 +0.1 2.4-0.1 Planar Die Construction 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 |
Original |
bzx84c11ot-23350mw | |
|
Contextual Info: Product specification BZX84C20 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 0.4 3 Ideally Suited for Automated Assembly Processes 1 0.55 350mW Power Dissipation +0.1 1.3-0.1 +0.1 2.4-0.1 Planar Die Construction 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 |
Original |
bzx84c20ot-23350mw | |
65060Contextual Info: Coaxial ZMY-2+ ZMY-2 Frequency Mixer Level 23 LO Power +23 dBm 10 to 1000 MHz Maximum Ratings Features Operating Temperature -55°C to 100°C Storage Temperature -55°C to 100°C RF Power 350mW IF Current 40mA • low conversion loss, 6.89 dB typ. • high isolation, 40 dB typ. L-R, 35 dB typ. L-I |
Original |
350mw2002/95/ec65060 | |
LM4819
Abstract: LM4819M LM4819MM M08A
|
Original |
lm4819350mw350mwrms300mwrms+3 | |
ZFY-11-S
Abstract: ZFY-11
|
Original |
zfy-11350mwzfy-11-s | |