35 CFY Search Results

GaAs FET cfy 19

Abstract: S11 SIEMENS z0 607 MA 7a
Contextual Info: SIEMENS CFY 35 GaAs FET Datasheet * Low noise * High gain * For low-noise front end amplifiers * For DBS down converters 4 ^ ESD: V5005553 Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering code tape and reel CFY 35-20

GaAs FET cfy 19

Abstract: CFY 35-20 F1393 f1394 GSO05553 Q62702-F1393 Q62702-F1394 smd code marking 814 cfy 19
Contextual Info: GaAs FET CFY 35 Data Sheet • • • • Low noise High gain For low-noise front end amplifiers For DBS down converters ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code tape and reel CFY 35-20 NA Q62702-F1393

GSO05553

Abstract: Q62702-F1393 Q62702-F1394 smd 3520 CFY 35-23 GaAs FET cfy 14 CFY 19 CFY 65
Contextual Info: GaAs FET CFY 35 Data Sheet • • • • Low noise High gain For low-noise front end amplifiers For DBS down converters ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code tape and reel CFY 35-20 NA Q62702-F1393

3tb 50 siemens

Contextual Info: SIEMENS CFY 35 GaAs FET • • • • Low noise High gain For low-noise front end amplifiers For DBS down converters ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering code tape and reel CFY 35-20 NA Q62702-F1393

SMD MARKING CODE 901

Abstract: CFY 19 CFY 10 GaAs FET cfy 14
Contextual Info: GaAs FET CFY 35 Data Sheet • • • • Low noise High gain For low-noise front end amplifiers For DBS down converters ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code tape and reel CFY 35-20 NA Q62702-F1393

NF 847 G

Abstract: NF 833 nf 739 BA 857 k d 998 0 BAT 99 diode bav Siemens transistors rf CFY 35-20 6149-5X
Contextual Info: System Overview Outdoor Unit SAT - TV Low Noise Converter LNC RF Amplifier Mixer Oscillator 3. Stage active passive CFY 35-20 CFY 35-23 BAT 15-099/ BAT 15-04 IF-Amplifier 1. Stage 2. Stage BFP 405 BFP 420 CFY 30/ BFP 405 Power Supply 2 x BCX 51 3 x BC 858/W

d-10

Abstract: gaas fet marking a GaAs FET cfy 19 CFY 35-20 F1393 f1394 marking code 5 Q62702-F1393 Q62702-F1394 siemens gaas fet
Contextual Info: CFY 35 GaAs FET Datasheet * Low noise * High gain * For low-noise front end amplifiers * For DBS down converters ESD: Electrostatic discharge sensitive device,

GaAs FET cfy 14

Abstract: GaAs FET cfy 19 CFY 10 marking K gaas fet Ga FET marking k F1393 Q62702-F1393 Q62702-F1394 f5035 cfy 19
Contextual Info: CFY 35 GaAs FET Datasheet * Low noise * High gain * For low-noise front end amplifiers * For DBS down converters ESD: Electrostatic discharge sensitive device,

GaAs FET cfy 14

Contextual Info: SIEMENS CFY 35 GaAs FET Datasheet * Low noise * High gain * For iow-noise front end amplifiers * For DBS down converters ESO: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering code tape and reel Pin Configuration

Contextual Info: 15 GHz GaAs-FET Buffered Oscillator Application Note No. 010 A buffered stable oscillator has been developed using a parallel feedback circuit, two CFY 35 GaAs-field effect transistors and a dielectric resonator. In addition a spacer for a high resonator quality-factor is added. The design goals for this oscillator are high

transistor s2p

Abstract: design DRO TRANSISTOR C 2 SUB MA 2129 design dielectric resonator oscillator s2p 100 Dielectric Resonator Oscillator DRO CFY 18 CFY 10 CFY35
Contextual Info: 15 GHz GaAs-FET Buffered Oscillator Application Note No. 010 A buffered stable oscillator has been developed using a parallel feedback circuit, two CFY 35 GaAs-field effect transistors and a dielectric resonator. In addition a spacer for a high resonator quality-factor is added. The design goals for this oscillator are high

TRL15

Abstract: cfy transistor CFY 18 heft DRO components
Contextual Info: In fineon fschncio^iej 15 GHz G aAs-FE T B u ffe re d O s c illa to r A p p lic a tio n Note No. 010 A buffered stable oscillator has been developed using a parallel feedback circuit, two CFY 35 GaAs-field effect transistors and a dielectric resonator. !n addition a spacer for

Contextual Info: SIEMENS CFY 35 GaAs FET Features • Low noise • High gain • Fo r lo w -noise front end am plifiers • Fo r D B S dow n co nverters 5:1 E S D : E le c tro sta tic d is c h a rg e se n sitive de v ice , o b se rv e handling pre ca utio ns! Type Marking

peo 111

Abstract: NJU3501 PHY10
Contextual Info: • •• ••• ••• • • • •• oogpg? $gPS*>H> j 33J0 35 m > + Üiírd^'í Vf ^ I^ #EE> 0 S « äj«»5 H ] s 0 » K', * ; ia> H lïS s f - S - f ÿ ooÿ T iSiM'UJ SSSÉfMiiS^ I I M S Si~.i»i» —& 0X§| v'âa-æ 3-]!Í|BEt 4J -MWn WB

GM15

Abstract: 137 marking Micro-X
Contextual Info: CFY25 HiRel X-Band GaAs Low Noise / General Purpose MESFET • HiRel Discrete and Microwave Semiconductor • For professional pre- and driver-amplifiers • For frequencies from 500 MHz to 20 GHz • Hermetically sealed microwave package • Low noise figure, high gain, moderate power

marking code s22

Abstract: zo 607 MA CFY25 CFY25-20 CFY25-20P CFY25-23 CFY25-23P CFY25-P
Contextual Info: CFY25 HiRel X-Band GaAs Low Noise / General Purpose MESFET • HiRel Discrete and Microwave Semiconductor • For professional pre- and driver-amplifiers • For frequencies from 500 MHz to 20 GHz • Hermetically sealed microwave package • Low noise figure, high gain, moderate power

35 micro-X Package MARKING CODE Q

Abstract: transistor equivalent book FOR D 1047 zo 607 MA marking code s22 microwave transistor siemens transistor GaAS marking 576 zo 607 CFY25 CFY25-20 CFY25-20P
Contextual Info: CFY25 HiRel X-Band GaAs Low Noise / General Purpose MESFET • HiRel Discrete and Microwave Semiconductor • For professional pre- and driver-amplifiers • For frequencies from 500 MHz to 20 GHz • Hermetically sealed microwave package • Low noise figure, high gain, moderate power

micro-X Package MARKING CODE C

Abstract: 137 marking Micro-X 78 D 56
Contextual Info: S IE M E N S CFY25 HiReIX-Band GaAs Low Noise / General Purpose MESFET • HiRel Discrete and Microwave Semiconductor • For professional pre- and driver-amplifiers • For frequencies from 500 MHz to 20 GHz • Hermetically sealed microwave package • Low noise figure, high gain, moderate power

Contextual Info: S IE M E N S CFY25 HiRelX-Band GaAs Low Noise / General Purpose MESFET • HiRel Discrete and Microwave Semiconductor • For professional pre- and driver-amplifiers • For frequencies from 500 MHz to 20 GHz • Hermetically sealed microwave package • Low noise figure, high gain, moderate power

35 micro-X Package MARKING CODE Q

Abstract: CFY67 CFY67-06 CFY67-08 CFY67-08P CFY67-10 CFY67-10P HEMT marking P CFY67-08P P
Contextual Info: CFY67 HiRel K-Band GaAs Super Low Noise HEMT • HiRel Discrete and Microwave Semiconductor • Pseudo-morphic AlGaAs/InGaAs/GaAs HEMT • For professional super low-noise amplifiers • For frequencies from 500 MHz to > 20 GHz • Hermetically sealed microwave package

Q62702-F1394

Contextual Info: Infineon faîhnoîogte» G aA s FET CFY 3 5 Data Sheet • • Low noise High gain • For low-noise front end amplifiers • For DBS down converters ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code tape and reel

Micro-X Marking 865

Contextual Info: S IE M E N S CFY67 HiRel K-Band GaAs Super Low Noise HEMT • HiRel Discrete and Microwave Semiconductor • Pseudo-morphic AIGaAs/lnGaAs/GaAs HEMT • For professional super low-noise amplifiers • For frequencies from 500 MHz to > 20 GHz • Hermetically sealed microwave package

5N521

Abstract: CFY30
Contextual Info: SIEMENS CFY 30 GaAs FET F eatures • Low noise /-'mm = 1.4 d B at 4 G Hz • High gain (11.5 dB typ. a l 4 GHz) • For o scillators up to 12 G Hz • For am p lifiers up to 6 GHz • Io n -im planted p lanar structure • C hip all gold m etallization

35 micro-X 20ghz gaas

Abstract: marking K "micro x" transistor GaAS marking 576 CFY25 CFY25-20 CFY25-20P CFY25-23 CFY25-23P CFY25-P 133 marking Micro-X
Contextual Info: CFY25. HiRel X-Band GaAs General Purpose MESFET • HiRel discrete and Microwave semiconductor • For professional pre- and driver- amplifiers • For frequencies from 500MHz to 20GHz • Hermetically sealed microwave package • Low noise figure, high gain, moderate power