34BTL Search Results

NDT454P

Contextual Info: National June 1996 Semiconductor" N D T454P P-Channel Enhancement M ode Field Effect Transistor General Description Features These P-Channel e n h a n ce m e n t m o d e e ffect tra n s is to rs p ro p rie ta ry , hig h are pro d u ce d cell d e nsity, using

NDT3055

Contextual Info: t* September 1996 National Semiconductor" N D T3055 N-Channel Enhancement M ode Field Effect Transistor General Description Features P ow er SO T N-C hannel e n h a n c e m e n t m o d e p o w e r fie ld e ffect tra n s is to rs are pro d u ce d using N a tio n a l's

NDT453N

Contextual Info: September 1996 National Semiconductor" N D T453N N-Channel Enhancement M ode Field Effect Transistor General Description Features Power SOT N-Channel enhancem ent m ode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology.

Contextual Info: SEMICONDUCTOR NC7SZ32 TinyLogic™ UHS 2-Input OR Gate General Description Features The NC7SZ32 is a single 2-Input OR Gate from Fairchild’s Ultra High Speed Series of TinyLogic™ in the space saving SOT23 package. The device is fabricated with advanced

NDT2955 SOT223

Abstract: NDT2955 E125
Contextual Info: September 1996 National Semiconductor" N D T2955 P-Channel Enhancement M ode Field Effect Transistor General Description Pow er SOT P -C h a n n e l Features power • -2 .5 A , -6 0 V . RDS 0N = 0 .3 £ i @ V GS = -1 0V. fie ld e ffe c t tr a n s is to r s a re p ro d u c e d u s in g N a tio n a l's

NDT451N

Contextual Info: S e ptem be r 1996 National Semiconductor" N D T451N N-Channel Enhancement M ode Field Effect Transistor General Description Features Power SOT N-Channel enhancem ent m ode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology.

irf640

Abstract: IRF240 RF640 IRF 1640 IRF640 applications note PULSE GENERATOR IRF640-643 IRF241 IRF242 IRF243 IRF641
Contextual Info: I FAIRCHILD SEMICONDUCTOR fl4 dÈ J 3 4 b U 7 4 DDETflfiS □ IRF240-243/IRF640-643 T - 3 Ï - H N-Channel Power MOSFETs, 18 A, 150-200 V FA IR C H ILD A Schlumberger Company Power And Discrete Division Description TO-2Q4AE TO-220AB These devices are n-channel, enhancement mode, power

34B SOT

Abstract: NDT452P c3 sot223
Contextual Info: September 1996 National f i Semiconductor"' N D T452P P-Channel Enhancement M ode Field Effect Transistor G eneral Description Features P ow er SO T P-Channel e n h a n c e m e n t m o d e p o w e r fie ld e ffect tra n sisto rs are pro d u ce d using N a tio n a l's

2n4208

Abstract: FTS04124 27575 2n4239 4235 schlumberger 2N4123 2N4124 2N4125 2N4126
Contextual Info: FAIRCHILD SEMICONDUCTOR " ~S4 F e J| 34LTL74 00B7S71 T 3469674 FAIRCHILD SEMICONDUCTOR 84D 27571 2N4123/FTS04123 2N4124/FTS04124 f a ip c h il d A Schlum berger C om pany NPN Small Signal General Purpose Am plifiers & Switches • • • • . . . 25 V Min (2N/FTS04124)

FZ 300 R 06 KL

Abstract: 34B SOT NDT410EL L-253
Contextual Info: August 1 996 National Semiconductor" N DT410EL N-Channel Logic Level Enhancement M ode Field Effect Transistor Features General Description Power SOT N-Channel logic level enhancem ent mode power field effect transistors are produced using N ational's proprietary, high cell density, DMOS

NDT3055L

Abstract: 6SS4 NDT3055
Contextual Info: S e ptem be r 1996 N ational f Semiconductor"' i N D T3055L N-Channel Logic Level Enhancement M ode Field Effect Transistor General Description Features Power SOT logic level N-Channel enhancem ent m ode field effect transistors are produced using National's proprietary, high cell density, DMOS

LAL 2.25

Abstract: NDT451 NDT451AN TRANSISTOR b72
Contextual Info: Jul y 1996 National f Semiconductor" i NDT451 AN N-Channel Enhancement M ode Field Effect Transistor G eneral Description Features These N-C hannel e n h a n c e m e n t m o d e p o w e r fie ld e ffect tra n s is to rs are pro d u ce d using N a tio n a l's