34BT1B74 Search Results

T2D 24 DIODE

Abstract: T2d 43 diode T2D 65 DIODE T2d 61 diode T2D DIODE 42 T2D DIODE 32 T2D 04 DIODE diode T2D
Contextual Info: July 1996 NDT455N N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel logic level enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology. This very high density process is

Contextual Info: I R C H SMBJ5.0 C A - SMBJ170(C)A F A I L D SEM ICONDUCTOR SMBJ5.0(C)A - SMBJ170(C)A Features • Glass passivated junction. • 600W Peak Pulse Power capability on 10/1000 ps waveform. • Excellent clamping capability. • Low incremental surge resistance.