3408 DIODE Search Results

Contextual Info: 3408 Diodes 3-Phase Full-Wave Bridge Rectifier Military/High-RelN I O Max.(A) Output Current20 @Temp (øC) (Test Condition)55 V(RRM)(V) Rep.Pk.Rev. Voltage800 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.150 V(FM) Max.(V) Forward Voltage1.5 @I(FM) (A) (Test Condition)9

DSC015

Contextual Info: Ordering number :EN3408 D SCO 15 No.3408 SA\YO Silicon E pitaxial P la n ar Type i High-Voltage Switching Diode F e a tu re s •Ideally suited for use in hybrid ICs because of small-sized package. • High breakdown voltage. A b so lu te M axim um R a tin g s a t Ta = 25°C

NJX3501

Abstract: si 3522 v japan radio co OSCILATOR 3408 diode NJX3401 251C NJX3000 NJX3402 NJX3408
Contextual Info: NEW J A P A N R A D T O CO LT D 4SE D • h5bSÔÔ3 Ü0D1171 OSE « N J R C SCHOTTKY BARRIER DIODES NJX3000 Series ' r o 7 '°7 ■ Description NJX3000 Series Schottky barrier diodes are with raetal-semicondutor junction. These devices are suited for microwave

Contextual Info: LTC3408 1.5MHz, 600mA Synchronous Step-Down Regulator with Bypass Transistor FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ U ■ DESCRIPTIO Dynamically Adjustable Output from 0.3V to 3.5V 600mA Output Current Internal 0.08Ω P-Channel MOSFET Bypass

Contextual Info: NEW JAPAN RADTO CO LTD 4SE D • b5bS afl3 D0D1171 052 « N J R C SCHOTTKY BARRIER DIODES < * n -» -07 NJX3000 Series ■ Description NJX3000 Series Schottky barrier diodes are with raetal-semicondutor junction. These devices are suited for microwave mixers and detectors. An important point in designing for these applications is Barrier Height. We supply four kinds of

Q67006-A9570-A002

Abstract: BTS3408G HITFET GPS05560 BTS3408
Contextual Info: HITFET BTS3408G Smart Dual Lowside Power Switch Data Sheet V1.1 Features • • • • • • • • • • • • • • Logic Level Input Compatible to 3V micro controllers ESD protection Thermal shutdown with auto restart Overload protection Short circuit protection

Contextual Info: DG3408, DG3409 Vishay Siliconix Precision 8-Ch/Dual 4-Ch Low Voltage Analog Multiplexers DESCRIPTION FEATURES The DG3408, DG3409 uses BiCMOS wafer fabrication technology that allows the DG3408/3409 to operate on single and dual supplies. Single supply voltage ranges from 3

Contextual Info: DG3408, DG3409 Vishay Siliconix Precision 8-Ch/Dual 4-Ch Low Voltage Analog Multiplexers DESCRIPTION FEATURES The DG3408, DG3409 uses BiCMOS wafer fabrication technology that allows the DG3408/3409 to operate on single and dual supplies. Single supply voltage ranges from 3

MC3408

Abstract: MC1508
Contextual Info: M O T O R O L A E IG H T -B IT M U L T IP L Y IN G D IG ITA L -TO -A N A LO G C O N VE R TE R LOW-COST EIG H T-B IT M U L T IP L Y IN G D IG ITA L -TO -A N A LO G CO N VE R TE R . . . designed f o r use w h e re th e o u tp u t c u rre n t is a lin e a r p ro d u c t

Contextual Info: DG3408/3409 New Product Vishay Siliconix Precision 8-Ch/Dual 4-Ch Low Voltage Analog Multiplexers FEATURES BENEFITS D 2.7-to 12-V Single Supply or "3- to "6-V Dual Supply Operation D Low On-Resistance—rON: 3.9 W Typ. D Fast Switching: tON — 42 ns, tOFF — 24 ns

DG3408

Abstract: DG3408DB-T2-E1 DG3409 DG3409DB-T2-E1 HP4192A J-STD-020B V300
Contextual Info: DG3408/3409 Vishay Siliconix Precision 8-Ch/Dual 4-Ch Low Voltage Analog Multiplexers DESCRIPTION FEATURES The DG3408/3409 uses BiCMOS wafer fabrication technology that allows the DG3408/3409 to operate on single and dual supplies. Single supply voltage ranges from 3

Ericsson bts installation guide

Abstract: ericsson BTS and antenna installation ericsson BTS GSM 1800 Nokia BTS ericsson bts Technical specification BTS Base Terminal alcatel indoor BTS of ericsson siemens 230 gas discharge tube TNC PROTECTIVE CAP BTS 6000 ericsson
Contextual Info: Lightning Protectors Edition 2008/2009 Excellence in Connectivity Solutions Introduction content Introduction page 6 Definitions and terms page 27 Quick selection page 37 Products page 53 Accessories page 129 Application notes page 143 General information

THT bsc 25

Abstract: but15 BM 1313 diode 2SC1020 NT 407 F TRANSISTOR transistor 3405 npn SV0200 M70 IBM sm 0038 3408 diode
Contextual Info: MOTOROL A SC 1EE D I b3b?aS4 0004050 1 | X S T RS /R F MOTOROLA SEMICONDUCTOR TECHNICAL DATA 20 AMPERES SWITCHMODE SERIES NPN SILICON POWER DARLINGTON TRANSISTORS WITH BASE-.EMITTER SPEEDUP DIODE NPN SILICON POWER DARLINGTON TRANSISTORS 1000 VOLTS 175 WATTS

2N1479

Abstract: 2N1480 2N1481 2N1482 2N1700 2N5781 2N5782 2N5784 2N5785 2N5786
Contextual Info: "flM NPN TO-39/TO-5 2848352 DIODE TRANSISTOR DE J 2 B M Û 3 S E 0DÜG155 5 C O . I N C 84D 00125 D jr. 3 l-O fT D1QDE TMI\l.515T0ft Cü.if\IC. 201 686-0400 • Telex: 139-385 • Outside NY & NJ area ca ll TO LL FREE 800-526-4581 FA X No. 201-575-5863

CS3705

Abstract: RFM10n50 RFM10N45
Contextual Info: Standard Power M O S F E T s - RFM10N45, RFM10N50 File Number 1788 Power MOS Field-Effect Transistors N-Channel Enhancement-Mode Power Field-Effect Transistors 10 A, 450 V - 500 V 0.6 1 N-CHANNEL ENHANCEMENT MODE fD S lo n *

MTM2P50

Abstract: MTP2P45 mtm2p45
Contextual Info: MOTOROLA SC X S T R S /R IME D I F b3b7254 G Q flW B | MOTOROLA •H SEMICONDUCTOR I TECHNICAL DATA MTM2P45 MTM2P50 MTP2P45 MTP2P50 Designer's Data Sheet Pow er Field Effect Transistor P-Channe! Enhancement-Mode Silicon Gate TM OS These TM O S Power FETs are designed for medium voltage,

HA7-5130

Contextual Info: HARRIS SEMICQND SECTOR 4GE D • 4305571 QD32DS4 1 ■ H A S T-l 9 - C U - l O f f l H A R R i e H A - 5 1 3 / 3 5 Precision Operational Amplifier, August 1991 Features Applications • Low Offset Voltage . 10jjV

106V

Abstract: 5101 H5111 AN554 HA2-5101-2 HA3-5101-5 HA-5101 HA5111 HA-5111
Contextual Info: HA-5101, HA-5111 S E M I C O N D U C T O R 10MHz and 100MHz, Low Noise, Operational Amplifiers November 1996 Features Description • Low Noise . . . . . . . . . . . . . . . . . . . . . 3.0nV/√Hz at 1kHz The HA-5101/5111 are dielectrically isolated operational

ABB inverter motor fault code

Abstract: PT100 temperature sensor ABB motor 3AFE68735190 ACS350 ABB ACS350 3AFE68586704 ACS350 drives 3AFE68591091 03X-12A5-4 3AFE68591082
Contextual Info: ACS350 User’s Manual ACS350 Drives 0.37…22 kW, 0.5…30 HP ACS350 drive manuals OPTION MANUALS (delivered with optional equipment) FCAN-01 CANopen Adapter Module User’s Manual 3AFE68615500 (EN) FDNA-01 DeviceNet Adapter Module User’s Manual 3AFE68573360 (EN)

CPU32 Reference Manual

Abstract: DMX-38 M6800 MC68332 mosfet 4456 MC68HC681
Contextual Info: SECTION 5 SYSTEM INTEGRATION MODULE This section is an overview of the system integration module SIM function. Refer to the SIM Reference Manual (SIMRM/AD) for a comprehensive discussion of SIM capabilities. Refer to APPENDIX D REGISTER SUMMARY for information concerning the SIM address map and register structure.

B41858C9107M

Abstract: B41002 B41022
Contextual Info: Aluminum electrolytic capacitors Single-ended capacitors Series/Type: B41858 Date: December 2010 EPCOS AG 2010. Reproduction, publication and dissemination of this publication, enclosures hereto and the information contained therein without EPCOS' prior express consent is prohibited.

Contextual Info: MP87198 CMOS Very Low Power 10-Bit, Analog-to-Digital Converter with 4-Channel Mux m . Micro Power Systems FEATURES BENEFITS • • • • • • • • • • • • • • • • • • 10-Bit Resolution Sampling Rates from <1.5 kHz to 1.0 MHz DNL better than 1/2 LSB typ up to 1 MHz

Contextual Info: MICRO POWER SYSTEMS INC b lE btmMMM D GDOHßbb m HMPS MP87198 ML CM OS Very Low Power 10-Bit, Analog-to-Digital Converter with 4-Channel Mux Micro Power Systems BENEFITS FEATURES • • • • • 10-Bit Resolution Sampling Rates from <1.5 kHz to 1.0 MHz

MAX4130

Abstract: MAX4130EUK-T MAX4131 MAX4131EBT-T MAX4131EUA MAX4133 MAX4134 SOT-23 AABB AAx8
Contextual Info: 19-1089; Rev 3; 3/03 Single/Dual/Quad, Wide-Bandwidth, Low-Power, Single-Supply, Rail-to-Rail I/O Op Amps Selector Guide AMPS PER PACKAGE SHUTDOWN MODE PINPACKAGE MAX4130 1 — 5 SOT23 MAX4131 1 Yes 6 UCSP, 8 µMAX/SO MAX4132 2 — 8 µMAX/SO MAX4133 2 Yes