340 MMIC Search Results

smd code book L2

Abstract: 340 mmic
Contextual Info: GaAs MMIC CGY 340 Data Sheet • • • • • • • • • • WLL transmit upconverter IC for 3.5 GHz Fully Integrated IF Variable Gain Amplifier, Mixer, LO-Buffer, three RF Amplifier Stages and a switched Attenuator High Conversion Gain: typ. 29 dB

4.7 ohm resistor

Abstract: HMC535LP4 HMC535LP4E LM2903MX MMBT3904
Contextual Info: HMC535LP4 / 535LP4E v00.0405 Typical Applications Features Phase-Locked Oscillator for: Pout: +9 dBm • VSAT Radio Phase Noise: -110 dBc/Hz @100 KHz Typ. • Point-to-Point & Point-to-Multi-Point Radio • Test Equipment & Industrial Controls Single Supply: +5V @ 340 mA

GaAs HEMTs X band

Abstract: X-band Gan Hemt 0.18um AlGaN/GaN HEMTs x-band mmic lna alcon X-band diode gp 421 LNA x-band
Contextual Info: High Linearity, Robust, AlGaN-GaN HEMTs for LNA & Receiver ICs P. Parikh, Y. Wu, M. Moore, P. Chavarkar, U. Mishra, Cree Lighting Company, 340 Storke Road, Goleta, CA 93117. R. Neidhard, L. Kehias, T. Jenkins, Air Force Research Laboratory, Sensors Directorate, WPAFB, OH 45433.

sdars

Abstract: HS350 marking 340 mmic
Contextual Info: GaAs INTEGRATED CIRCUIT µPG2310TK GaAs MMIC LOW NOISE AMPLIFIER FOR SATELLITE RADIO DESCRIPTION The µPG2310TK is a GaAs MMIC LNA for SDARS Satellite Digital Audio Radio Services . High Gain and Low Distortion suit to driver stage amplifier for Satellite Radio Antenna.

HS350

Contextual Info: DATA SHEET GaAs INTEGRATED CIRCUIT µPG2310TK GaAs MMIC LOW NOISE AMPLIFIER FOR SATELLITE RADIO DESCRIPTION The µPG2310TK is a GaAs MMIC LNA for SDARS Satellite Digital Audio Radio Services . High Gain and Low Distortion suit to driver stage amplifier for Satellite Radio Antenna.

EMM5717

Contextual Info: EMM5717YF Ku / K Band Low Noise Amplifier MMIC FEATURES •Low Noise Figure : NF = 2.0dB Typ. @ f=18 GHz •High Associated Gain : Gas = 23dB ( Typ.) @ f=18 GHz •Broad Band : 12.7 - 24.0 GHz •High Output Power : P1dB = 17.5dBm ( Typ. ) •Impedance Matched Zin/Zout = 50ohm

EMM5717

Abstract: YD 1102
Contextual Info: EMM5717YF Ku / K Band Low Noise Amplifier MMIC FEATURES •Low Noise Figure : NF = 2.0dB Typ. @ f=18 GHz •High Associated Gain : Gas = 23dB ( Typ.) @ f=18 GHz •Broad Band : 12.7 - 24.0 GHz •High Output Power : P1dB = 17.5dBm ( Typ. ) •Impedance Matched Zin/Zout = 50ohm

EMM5717

Abstract: EMM5717YF EMM5717YFT 337 SMD 544 mmic JESD22-A114-C J-STD-020B Sumitomo 1076
Contextual Info: EMM5717YF Ku / K Band Low Noise Amplifier MMIC FEATURES •Low Noise Figure : NF = 2.0dB Typ. @ f=18 GHz •High Associated Gain : Gas = 23dB ( Typ.) @ f=18 GHz •Broad Band : 12.7 - 24.0 GHz •High Output Power : P1dB = 17.5dBm ( Typ. ) •Impedance Matched Zin/Zout = 50ohm

6 FMR 40

Contextual Info: AM011037WM-BM-R AM011037WM-FM-R February 2010 Rev 2 DESCRIPTION AMCOM’s AM011037WM-BM-R and AM011037WM-FM-R are part of the GaAs pHEMT MMIC power amplifier series. These high efficiency MMICs are 2-stage GaAs pHEMT power amplifiers biased at +8V. The input and

AM011037WM-BM/FM-R

Abstract: amcomusa mmics
Contextual Info: AM011037WM-BM-R AM011037WM-FM-R July 2010 Rev 3 GaAs MMIC Power Amplifier DESCRIPTION AMCOM’s AM011037WM-BM/FM-R is part of the GaAs pHEMT MMIC power amplifier series. This high efficiency MMIC is a 2-stage GaAs pHEMT power amplifier biased at +8V. The input and inter-stage matching networks cover

RAYTHEON

Abstract: RMPA2451 RMPA2451-58
Contextual Info: RMPA2451-58 2.4-2.5 GHz GaAs MMIC Power Amplifier Description Features Raytheon RMPA2451-58 is a partially matched monolithic power amplifier in a surface mount package for use in wireless applications in the 2.4 to 2.5 GHz ISM frequency band. The amplifier may be biased for linear, class AB or

EMM5717YF

Abstract: EMM5717 KU 612 544 mmic ED-4701 "ku band" amplifier
Contextual Info: ES/EMM5717YF Preliminary Ku / K Band Low Noise Amplifier MMIC FEATURES •Low Noise Figure : NF = 2.0dB Typ. @ f=18 GHz •High Associated Gain : Gas = 23dB ( Typ.) @ f=18 GHz •Broad Band : 12.7 - 24.0 GHz •High Output Power : P1dB = 17.5dBm ( Typ. )

RAYTHEON

Abstract: 50W 4 GHz linear power amplifier
Contextual Info: # 425430398 Description Features Absolute Ratings Electrical Characteristics1 RMPA2451-58 2.4-2.5 GHz GaAs MMIC Power Amplifier PRODUCT INFORMATION Raytheon RF Components’ RMPA2451-58 is a partially matched monolithic power amplifier in a surface mount package for use in wireless applications in the 2.4 to 2.5 GHz ISM frequency band. The

MAR-8A

Contextual Info: MMIC Amplifier MAR-8ASM+ Typical Performance Data NOTE: Use PDF Bookmarks to view DATA at required conditions or to view GRAPHS. Definitions: Input Return Loss = -S11 dB Gain(Power Gain) = S21 (dB) Reverse Isolation = -S12 (dB) Output Return Loss = -S22 (dB)

murata 2.4 GHz filter

Abstract: pin configuration of 8251 RMPA2451B-58
Contextual Info: RMPA2451B-58 2.4-2.5 GHz GaAs MMIC Power Amplifier Description Features Raytheon RMPA2451B-58 is a partially matched monolithic power amplifier in a surface mount package for use in wireless applications in the 2.4 to 2.5 GHz ISM frequency band. The amplifier may be biased for linear, class AB or

EMM5717X

Contextual Info: ES/EMM5717X Preliminary Ku / K Band Low Noise Amplifier MMIC FEATURES ・Low Noise Figure : NF = 1.5dB Typ. @ f=12.7GHz ・High Associated Gain : Gas = 25dB ( Typ.) ・Broad Band : 12.7 - 24.0 GHz ・High Output Power : P1dB = 18dBm ( Typ. ) ・Impedance Matched Zin/Zout = 50Ω

EMM5717X

Abstract: EMM5717
Contextual Info: EMM5717X Ku / K Band Low Noise Amplifier MMIC FEATURES ・Low Noise Figure : NF = 1.5dB Typ. @ f=12.7GHz ・High Associated Gain : Gas = 25dB ( Typ.) ・Broad Band : 12.7 - 24.0 GHz ・High Output Power : P1dB = 18dBm ( Typ. ) ・Impedance Matched Zin/Zout = 50Ω

73D31

Abstract: 26c311 EMM5717 EMM5717X D4444 9311H 4CC3 11D-9 A311D 6661D
Contextual Info: EMM5717X Ku / K Band Low Noise Amplifier MMIC FEATURES Low Noise Figure : NF = 1.5dB Typ. @ f=12.7GHz High Associated Gain : Gas = 25dB ( Typ.) Broad Band : 12.7 - 24.0 GHz High Output Power : P1dB = 18dBm ( Typ. ) Impedance Matched Zin/Zout = 50Ω

MAR-8A

Contextual Info: MMIC Amplifier MAR-8A+ Typical Performance Data NOTE: Use PDF Bookmarks to view DATA at required conditions or to view GRAPHS. Definitions: Input Return Loss = -S11 dB Gain(Power Gain) = S21 (dB) Reverse Isolation = -S12 (dB) Output Return Loss = -S22 (dB)

RAYTHEON

Abstract: RMPA2451 RMPA2451-58
Contextual Info: Raytheon Raytheon Commercial Electronics RMPA2451-58 2.4 to 2.5 GHz GaAs MMIC Power Amplifier Description Raytheon RMPA2451-58 is a partially matched monolithic power amplifier in a surface mount package for use in wireless applications in the 2.4 to 2.5 GHz

9715

Abstract: RAYTHEON RMPA2451 RMPA2451-53
Contextual Info: Raytheon Raytheon Commercial Electronics RMPA2451-53 2.4 to 2.5 GHz GaAs MMIC Power Amplifier Description Raytheon RMPA2451-53 is a partially matched monolithic power amplifier in a surface mount package for use in wireless applications in the 2.4 to 2.5 GHz ISM frequency band. The amplifier may be biased for linear, class AB

7447

Abstract: 7404
Contextual Info: MAR-8ASM Performance Data NOTE:Use PDF Bookmarks to view DATA at required conditions TYPE: MMIC Amplifier MODEL: MAR-8ASM Reference Data:RDF-994 S PARAMETERS are presented in dB/deg Format TEST CONDITIONS: INPUT POWER: PORT IN=-30dBm, PORT OUT=0dBm; Icc=36mA; Vcc=3.97V@Temp.=+25degC

9323 12515

Abstract: 7447 7404 MAR8
Contextual Info: MAR-8A Performance Data NOTE:Use PDF Bookmarks to view DATA at required conditions TYPE: MMIC Amplifier MODEL: MAR-8A Reference Data:RDF-994 S PARAMETERS are presented in dB/deg Format TEST CONDITIONS: INPUT POWER: PORT IN=-30dBm, PORT OUT=0dBm; Icc=36mA; Vcc=3.97V@Temp.=+25degC

Contextual Info: Analog Devices Welcomes Hittite Microwave Corporation NO CONTENT ON THE ATTACHED DOCUMENT HAS CHANGED www.analog.com www.hittite.com THIS PAGE INTENTIONALLY LEFT BLANK HMC7149 v01.1113 10 WATT GaN MMIC POWER AMPLIFIER, 6 - 18 GHz AMPLIFIERS - LINEAR & POWER - CHIP