33L2200 Search Results

33L2600

Contextual Info: VDSM = 2800 V ITAVM = 3740 A ITRMS = 5880 A ITSM = 60000 A VT0 = 0.95 V rT = 0.100 mΩ Phase Control Thyristor 5STP 33L2800 Doc. No. 5SYA1011-03 Aug.00 • Patented free-floating silicon technology • Low on-state and switching losses • Designed for traction, energy and industrial applications

Contextual Info: VDSM ITAVM ITRMS ITSM VT0 rT = = = = = = 2800 V 3740 A 5880 A 60000 A 0.95 V 0.1 mΩ Ω Phase Control Thyristor 5STP 33L2800 Doc. No. 5SYA1011-03 Jan. 02 • Patented free-floating silicon technology • Low on-state and switching losses • Designed for traction, energy and industrial applications

33L2600

Contextual Info: Key Parameters VDSM = 2800 ITAVM = 3300 ITRMS = 5180 ITSM = 60000 VT0 = 0.95 rT = 0.100 V A A A V mΩ Phase Control Thyristor 5STP 33L2800 Doc. No. 5SYA 1011-02 May, 98 Features • Patented free-floating silicon technology • Low on-state and switching losses

ABB thyristor 5

Abstract: 33L2800
Contextual Info: VDSM ITAVM ITRMS ITSM VT0 rT = = = = = = 2800 V 3740 A 5880 A 60000 A 0.95 V 0.100 mΩ Ω Phase Control Thyristor 5STP 33L2800 Doc. No. 5SYA1011-03 Sep. 01 • Patented free-floating silicon technology • Low on-state and switching losses • Designed for traction, energy and industrial applications