32S0P Search Results

lh5s4

Abstract: lh5348 sharp lh53 lh5s47xx LH5S47 60446 sharp mask rom LH53V4R00N LH5H41XX TSOP032-P-0820
Contextual Info: NEW PRODUCT INFORMATION LH53V4R00 LH53V4R00-2 • Description Low-Voltage • High-Speed 4M-bit Mask-Programmable ROM Pin Connection The L H 53V 4R 00N /T , L H 53V 4 R 0 0 N /T -2 U ser’s N o. : LH5V4RXX is a CMOS 4M -bit mask-programmable ROM 32-pin SOP

LH532K

Abstract: LH53V2R00N LH53V2R00T TSQP032-P-0820 LH5V2R 48TSOP 2mbit sharp mask rom LH532CXX
Contextual Info: NEW PRODUCT INFORMATION LH53V2R00 • Description Low-Voltage • High-Speed 2M-bit Mask-Programmable ROM Pin Connection The LH53V2R00N/T User's No. : LH5V2RXX is a CMOS 2M-bit mask-programmable ROM organized as 262 144 X 8 bits. It provides a high-speed access time of 120 ns with low voltage

28DIP300

Abstract: 24-DIP-300 28-DIP-300 J400 32-TS0P1-0814F 28-SOJ-300 28-DIP-600B
Contextual Info: P A C K A G E DIMENSIONS Unit : mm/inch 24-DIP-300 485 ELECTRONICS PA C K A G E DIMENSIONS Unit : mm/inch 28-DIP-300 486 ELECTRONICS PA C K A G E DIMENSIONS Unit : mm/inch 28-DIP-600B 487 ELECTRONICS PA C K A G E DIMENSIONS Unit : mm/inch 32-DIP-600 488 ELECTRONICS

Contextual Info: CMOS 512K 64K x 8 Pseudo^Static RAM FEATURES • 66,536 x 8 bit organization • Access time: 80 ns (MAX.) • Cycle time: 140 ns (MIN.) • Single -»5 V power supply • Power consumption: Operating: 440 mW (MAX.) Standby (TTL level): 22 mW (MAX) Standby (CMOS level): 2.75 mW (MAX.)

KMM591000AN

Abstract: KM41C464P KM424C256Z KMM591000B KM41C464 KMM584000B 4Mx1 nibble
Contextual Info: MEMORY ICS FUNCTION GUIDE 2. PRODUCT GUIDE 2.1 Dynamic RAM Capacity 256K bit Part Number KM41C256P 256K X 1 KM41C256J 256K X 1 KM41C256Z KM41C257P 256K X 1 256Kx 1 70/80/100 KM41C257J 256K X 1 256K X 1 Packages Remark CMOS Fast Page 16 Pin DIP Fast Page 18 Pin PLCC