32P3H- E Search Results

TI_BQ24721C_QFN_32P

Abstract: M5M51016 M5M51008BVP
Contextual Info: # Low power dissipation s ta tic RAMs Low voltage operation (Continued) Memory capacity Max. Memory Configuration Function mode time (nsS 120 Ice (Power down) = 10 p A (max) = 0.3 'utfine M5M51008BFP-12VLL 32P 2M -A M5M51008BVP-12VLL 32P3H-E M5M51008BR V -12VLL

Contextual Info: 32P3H-F JEDEC Code – Weight g 0.37 Lead Material Alloy 42 MD e EIAJ Package Code TSOP 32-P-820-0.50 Plastic 32pin 8✕20mm TSOP( ) HD e b2 D 1 32 E I2 Recommended Mount Pad y Symbol A A2 L1 A1 F b 16 c 17 L Detail F A A1 A2 b c D E e HD L L1 y b2 I2 MD

Contextual Info: JEITA Package Code P-TSOP 1 32-8x18.4-0.50 RENESAS Code PTSA0032KA-B Previous Code 32P3H-F MASS[Typ.] 0.4g HD Index mark bp 32 D 1 *3 *2 e *1 E y S NOTE) 1. DIMENSIONS "*1" AND "*2" DO NOT INCLUDE MOLD FLASH. 2. DIMENSION "*3" DOES NOT INCLUDE TRIM OFFSET.

32P3H- E

Contextual Info: JEITA Package Code P-TSOP 1 32-8x18.4-0.50 RENESAS Code PTSA0032KA-A Previous Code 32P3H-E MASS[Typ.] 0.4g HD 1 D *3 b p *2 32 e *1 E y S NOTE) 1. DIMENSIONS "*1" AND "*2" DO NOT INCLUDE MOLD FLASH. 2. DIMENSION "*3" DOES NOT INCLUDE TRIM OFFSET. 17 S 16 F

B17C

Abstract: 32P3H-E
Contextual Info: 32P3H-E Plastic 32pin 8✕20mm TSOP JEDEC Code – Weight(g) 0.37 Lead Material Alloy 42 MD e EIAJ Package Code TSOP 32-P-820-0.50 HD e b2 D 32 1 E I2 Recommended Mount Pad y Symbol A A2 L1 A1 F b 17 c 16 L Detail F A A1 A2 b c D E e HD L L1 y b2 I2 MD

Contextual Info: E 16 1 EIAJ Package Code TSOP 32-P-820-0.50 D HD JEDEC Code – F Weight g 0.37 17 32 Lead Material Alloy 42 A 32P3H-E A2 A1 e Detail F b L L1 y e b2 c b2 I2 MD A A1 A2 b c D E e HD L L1 y Symbol Mar.’98 Dimension in Millimeters Min Nom Max – – 1.2

MSM5512

Abstract: MSM551 TI_BQ24721C_QFN_32P M5M5512 M5M5256DVP-8
Contextual Info: MEMORIES Low power dissipation static RAMs Low voltag e operation Memory capacity Memory Configuration Max. access Function mode Package Outline type No. time (n*) 70 Low voltage O peration (3.0 to 3.6V) Icc (Power down) = 10 ^ A (max) = 0 .0 5 // A (typ)

M5M5512FP-70LL

Abstract: SS12R 32P3H- E 1008BP-7QL
Contextual Info: Memory Configuration Memoty capacity Max. access time us Function mod» 45 with (SÏ, S2, ÒE) Icc (Power down) = 10 /x A (max) 55 = 0.1 mA (typ) 70 512K 64Kx8 45 i with (SÏ. S2, ÔE) Icc (Power down) = 5 ft A (max) = 0.1 !x 55 A (typ) 70 55 with (SÏ, S2, OË)

M5M51008AP

Abstract: M5M5I008AP M5M51008AVP
Contextual Info: MITSUBISHI LSIs M5M51008AP, FP, VP, RV-70L,-85L,-1 OL, -12L,-70LL,-85LL,-1 OLL,-12LL 1048576-BIT 131072-WORD BY 8-BIT CMOS STATIC RAM DESCRIPTION The M5M51008AP, FP, VP, RV are a 1 0 4 8 5 7 6 -bit CMOS static RAM organized as 131072 word by 8 -b it which are

R1LP0108ESP-7S

Abstract: R1LP0108ESP-5S R1LP0108 R1LP0108ESF R1LP0108ESP
Contextual Info: R1LP0108E Series 1Mb Advanced LPSRAM 128k word x 8bit R10DS0029EJ0100 Rev.1.00 2010.10.20 Description The R1LP0108E Series is a family of low voltage 1-Mbit static RAMs organized as 131,072-word by 8-bit, fabricated by Renesas’s high-performance 0.15um CMOS and TFT technologies. The R1LP0108E Series has realized higher

sram card 60 pin mitsubishi

Abstract: m5m51008c M5M5408
Contextual Info: L-41001-0E MITSUBISHI ELECTRIC Mitsubishi Low Power SRAM Technical Direction 256K 512K 1M 2M 4M 8M 16M Large Capacity Low Power SRAM High Speed Power down current 5.0V±0.5V : 55ns 256K : XL ver. 2µA max. 2.7V~3.6V : 85ns 70ns/55ns 1M : XL ver. 4µA max.

m5m51008afp

Abstract: m5m51008avp M5M51008AV
Contextual Info: MITSUBISHI LSIs M5M51008AFP,VP,RV-85VL,-1 OVL, -85VLL,-1 OVLL 1048576-BIT 131072-WORD BY 8-BIT CMOS STATIC RAM DESCRIPTION The M5M51008AFP, VP, RV are a 1048576-bit CMOS static RAM organized as 131072 word by 8 - b it which are fabricated using high-performance triple polysilicon CMOS

Contextual Info: MITSUBISHI LSIs M 5 M 5 1 0 0 8 A P ,F P ,V P ,R V -5 5 L ,-5 5 L L 1048576-BIT 131072-WORD BY 8-BIT CM0S STATIC RAM DESCRIPTION The M5M51008AP,FP.VP.RV are a 1048576- b it CMOS static RAM organized as 131072 word by 8 -b it which are fabricated using high-performance triple polysilicon CMOS

M5M28F101P

Abstract: m5m28f101
Contextual Info: \VTS V B IS H ' L S 's M 5 M 2 8 F 1 0 1 P , F P , J , V P , R V - ,- 1 2 , - 1 5 1 0 1048576-BIT 131072-WQRD BY 8-BIT CMOS FLASH MEMORY DESCRIPTION PIN CONFIGURATION (TOP VIEW) The Mitsubishi M5M28F101P, FP, J, VP, RV are high-speed 1 0 4 8 5 7 6 -bit CMOS Flash Memories. They are suitable for

sandisk micro sd card pin

Abstract: MCP 1Gb nand 512mb dram 130 256K x 16 DRAM FPM cross reference Toshiba NAND MLC FLASH BGA TSOP 48 Package nand memory toshiba MCP 1Gb 512Mb 130 PC133 registered reference design L7103 02bjxx ulsi
Contextual Info: Future On Chips MITSUBISHI SEMICONDUCTORS MITSUBISHI ELECTRIC CORPORATION ULSI Memory Memory Series Series ULSI RAM/MCP/FLASH New Data Package http://www.mitsubishichips.com Jul. 2000 L-11002-01 MITSUBISHI ELECTRIC CONTENTS 1. General 1 2. DRAM 9 3. Low Power SRAM