32P3H Search Results

Contextual Info: 32P3H-F JEDEC Code – Weight g 0.37 Lead Material Alloy 42 MD e EIAJ Package Code TSOP 32-P-820-0.50 Plastic 32pin 8✕20mm TSOP( ) HD e b2 D 1 32 E I2 Recommended Mount Pad y Symbol A A2 L1 A1 F b 16 c 17 L Detail F A A1 A2 b c D E e HD L L1 y b2 I2 MD

tsop 17

Abstract: E1732
Contextual Info: E 17 32 D HD JEDEC Code – F Weight g 0.37 16 1 L L1 Detail F Lead Material Alloy 42 A EIAJ Package Code TSOP 32-P-820-0.50 A2 A1 e b y e b2 32P3H-F c b2 I2 MD A A1 A2 b c D E e HD L L1 y Symbol Mar.’98 Dimension in Millimeters Min Nom Max – – 1.2

32P3H- E

Contextual Info: JEITA Package Code P-TSOP 1 32-8x18.4-0.50 RENESAS Code PTSA0032KA-A Previous Code 32P3H-E MASS[Typ.] 0.4g HD 1 D *3 b p *2 32 e *1 E y S NOTE) 1. DIMENSIONS "*1" AND "*2" DO NOT INCLUDE MOLD FLASH. 2. DIMENSION "*3" DOES NOT INCLUDE TRIM OFFSET. 17 S 16 F

Contextual Info: JEITA Package Code P-TSOP 1 32-8x18.4-0.50 RENESAS Code PTSA0032KA-B Previous Code 32P3H-F MASS[Typ.] 0.4g HD Index mark bp 32 D 1 *3 *2 e *1 E y S NOTE) 1. DIMENSIONS "*1" AND "*2" DO NOT INCLUDE MOLD FLASH. 2. DIMENSION "*3" DOES NOT INCLUDE TRIM OFFSET.

TI_BQ24721C_QFN_32P

Abstract: M5M51016 M5M51008BVP
Contextual Info: # Low power dissipation s ta tic RAMs Low voltage operation (Continued) Memory capacity Max. Memory Configuration Function mode time (nsS 120 Ice (Power down) = 10 p A (max) = 0.3 'utfine M5M51008BFP-12VLL 32P 2M -A M5M51008BVP-12VLL 32P3H-E M5M51008BR V -12VLL

Contextual Info: E 16 1 EIAJ Package Code TSOP 32-P-820-0.50 D HD JEDEC Code – F Weight g 0.37 17 32 Lead Material Alloy 42 A 32P3H-E A2 A1 e Detail F b L L1 y e b2 c b2 I2 MD A A1 A2 b c D E e HD L L1 y Symbol Mar.’98 Dimension in Millimeters Min Nom Max – – 1.2

B17C

Abstract: 32P3H-E
Contextual Info: 32P3H-E Plastic 32pin 8✕20mm TSOP JEDEC Code – Weight(g) 0.37 Lead Material Alloy 42 MD e EIAJ Package Code TSOP 32-P-820-0.50 HD e b2 D 32 1 E I2 Recommended Mount Pad y Symbol A A2 L1 A1 F b 17 c 16 L Detail F A A1 A2 b c D E e HD L L1 y b2 I2 MD

M5M51008BFP

Abstract: M5M51008BVP
Contextual Info: 1997-4/1 MITSUBISHI LSIs M5M51008BFP,VP,RV,KV,KR -70VL,-10VL,-12VL,-15VL, -70VLL,-10VLL,-12VLL,-15VLL-I 1048576-BIT 131072-WORD BY 8-BIT CMOS STATIC RAM DESCRIPTION PIN CONFIGURATION (TOP VIEW) ADDRESS INPUTS FEATURES Type name M5M51008BFP,VP,RV,KV,KR-70VL

M5M5V108DFP

Abstract: M5M5V108DKV M5M5V108DVP
Contextual Info: 7th.July.2000 Ver. 1.1 MITSUBISHI LSIs M5M5V108DFP,VP,KV -70HI 1048576-BIT 131072-WORD BY 8-BIT CMOS STATIC RAM DESCRIPTION The M5M5V108DFP,VP,KV are a 1048576-bit CMOS static RAM organized as 131072 word by 8-bit which are fabricated using highperformance triple-polysilicon and double metal CMOS technology.

A1245

Abstract: M5M51008BVP M5M51008BP
Contextual Info: 1997-3/25 MITSUBISHI LSIs M5M51008BP,FP,VP,RV,KV,KR -55L,-70L,-10L, -55LL,-70LL,-10LL 1048576-BIT 131072-WORD BY 8-BIT CMOS STATIC RAM DESCRIPTION PIN CONFIGURATION (TOP VIEW) ADDRESS INPUTS FEATURES Power supply current Type name M5M51008BP,FP,VP,RV,KV,KR-55L

SMD a16 Transistor

Abstract: DQ7-21 MARK S2 smd transistor A8 M5M5V108CFP M5M5V108CRV M5M5V108CVP
Contextual Info: MITSUBISHI LSIs M5M5V108CFP,VP,RV,KV,KR -70HI, -10HI, -70XI, -10XI 1048576-BIT 131072-WORD BY 8-BIT CMOS STATIC RAM DESCRIPTION The M5M5V108CFP,VP,RV,KV,KR are a 1048576-bit CMOS static RAM organized as 131072 word by 8-bit which are fabricated using high-performance quadruple-polysilicon and

M5M51008AP

Abstract: RV-12L
Contextual Info: MITSUBISHI LSIs M5M51008AP,FP,VP,RV-70L,-85L,-1 OL, -12L,-70LL,-85LL,-1 OLL,-12LL 1048576-BIT 131072-WQRD B Y 8-BIT CMOS STATIC RAM DESCRIPTION The M5M51008AP, FP, VP, RV are a 1 0 4 8 5 7 6 -bit CMOS static RAM organized as 131072 word by 8 - bit which are

M5M5512FP-70LL

Abstract: SS12R 32P3H- E 1008BP-7QL
Contextual Info: Memory Configuration Memoty capacity Max. access time us Function mod» 45 with (SÏ, S2, ÒE) Icc (Power down) = 10 /x A (max) 55 = 0.1 mA (typ) 70 512K 64Kx8 45 i with (SÏ. S2, ÔE) Icc (Power down) = 5 ft A (max) = 0.1 !x 55 A (typ) 70 55 with (SÏ, S2, OË)

MSM5512

Abstract: MSM551 TI_BQ24721C_QFN_32P M5M5512 M5M5256DVP-8
Contextual Info: MEMORIES Low power dissipation static RAMs Low voltag e operation Memory capacity Memory Configuration Max. access Function mode Package Outline type No. time (n*) 70 Low voltage O peration (3.0 to 3.6V) Icc (Power down) = 10 ^ A (max) = 0 .0 5 // A (typ)

R1LP0108ESA-7SR

Contextual Info: R1LP0108E Series 1Mb Advanced LPSRAM 128k word x 8bit R10DS0151EJ0100 Rev.1.00 2013.6.21 Description The R1LP0108E Series is a family of low voltage 1-Mbit static RAMs organized as 131,072-word by 8-bit, fabricated by Renesas’s high-performance 0.15um CMOS and TFT technologies. The R1LP0108E Series has realized higher

Contextual Info: R1LP0108E Series 1Mb Advanced LPSRAM 128k word x 8bit R10DS0029EJ0300 Rev.3.00 2013.6.21 Description The R1LP0108E Series is a family of low voltage 1-Mbit static RAMs organized as 131,072-word by 8-bit, fabricated by Renesas’s high-performance 0.15um CMOS and TFT technologies. The R1LP0108E Series has realized higher

432W6

Abstract: 48P4B hssop 44P3W-R 28P0 5P5T tsop 2-54 42P9R 70P3S-M 479F7G
Contextual Info: MITSUBISHI INTEGRATED CIRCUIT PACKAGES LIST OF PACKAGE CODES CLASSIFIED ACCORDING TO PIN NUMBER 1. LIST OF PACKAGE CODES CLASSIFIED ACCORIDING TO PIN NUMBER Pin Count Structure Type Lead Pitch mm 5 P P P P P P C C P P P C P P P P P P P P C P P P P P P P

PP5V

Abstract: M5M28F101AFP 708-8034
Contextual Info: K MITSUBISHI LSIs _ ' M 5 M 2 8 F 1 0 1 _ A F P , J , V P , R V - 8 5 , - 1 0 , - 1 2 1048576-BIT 131072-WQRD BY 8-BIT CMOS FLASH MEMORY DESCRIPTION The MITSUBISHI M5M28F101A is hlgh-speei 1048576-bit CMOS Flash Memories. This is suitable for the api lications with micro­

Contextual Info: '97.3.21 MITSUBISHI LSIs M5M5V208FP,VP,RV,KV,KR -tol-w, -85L-W, -10L-W, -12L-W, _ n.,nnrNn/araw -70LL-W, -85LL-W, -10LL-W, -12LL-W ip jB lU llö M /Ä W Y N o tic e T h is is n e t • Som e paramètre: limits are subject_ 2097152-BIT 262144-WORD BY 8-BIT CMOS STATIC RAM

m5m5v208

Abstract: AX8560 Kr85
Contextual Info: '97.3.21 MITSUBISHI LSIs M5M5V208FP,VP,RV,KV,KR -70L-W, -85L-W, - 10L-W, - 12 L-W, nnn,nAf5 W -70LL-W, -85LL-W, -10LL-W, -12LL-W Notice: This is not a final sP ^ ^ ° o c h ange. s o m e p a ra m e tric lim its are sud io c 2Q g71 g 2 B |J 2 g 2 1 44.WORD BY 8-BIT) CMOS STATIC RAM

M5M51008CP

Abstract: M5M51008CRV M5M51008CVP
Contextual Info: MITSUBISHI LSIs M5M51008CP,FP,VP,RV,KV,KR -55H, -70H, -55X, -70X 1048576-BIT 131072-WORD BY 8-BIT CMOS STATIC RAM DESCRIPTION The M5M51008CP,FP,VP,RV,KV,KR are a 1048576-bit CMOS static RAM organized as 131072 word by 8-bit which are fabricated using high-performance quadruple-polysilicon and

M5M51008BP

Abstract: M5M51008BVP
Contextual Info: 1997-4/1 MITSUBISHI LSIs M5M51008BP,FP,VP,RV,KV,KR -55L,-70L,-10L, -55LL,-70LL,-10LL-I 1048576-BIT 131072-WORD BY 8-BIT CMOS STATIC RAM DESCRIPTION PIN CONFIGURATION (TOP VIEW) ADDRESS INPUTS FEATURES Power supply current Type name M5M51008BP,FP,VP,RV,KV,KR-55L

R1LP0108ESP

Abstract: R1LP0108ESF R1LP0108 R1LP0108ESP-7SI R1LP0108ESF-7SR R1LP0108ESP-7SR R1LP0108es r1lp0108esp-5si#s0 r1lp0108esp-7sr#b0 ttl 7202
Contextual Info: R1LP0108E Series 1Mb Advanced LPSRAM 128k word x 8bit R10DS0029EJ0200 Rev.2.00 2011.01.14 Description The R1LP0108E Series is a family of low voltage 1-Mbit static RAMs organized as 131,072-word by 8-bit, fabricated by Renesas’s high-performance 0.15um CMOS and TFT technologies. The R1LP0108E Series has realized higher

Contextual Info: MITSUBISHI LSIs M5M51T08AP,FP,VP,RV-55SL 1048576-BIT 131Q72-WORD BY8-BIT CM0S STATIC RAM DESCRIPTION The M5M51T08AP, FP, VP, RV are a 1048576- bit CMOS static RAM organized as 131072 word by 8 - bit which are fabricated using high-performance quadruple-polysilicon