| GD32E113C8T6 |
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GigaDevice Semiconductor (Beijing) Inc
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32-bit MCU, Cortex-M4, 120 MHz, 128 KB Flash, 32 KB SRAM, two 12-bit ADCs/DACs, ten 16-bit timers, USBFS, 1.71-3.6 V, -40 to +85 °C. |
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| GD32E113V8T6 |
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GigaDevice Semiconductor (Beijing) Inc
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32-bit MCU, Cortex-M4, 120 MHz, 128 KB Flash, 32 KB SRAM, dual 12-bit 3 MSPS ADC/DAC, 10 timers, USBFS, 1.71-3.6 V, -40 to +85°C. |
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| GD32E113RBT6 |
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GigaDevice Semiconductor (Beijing) Inc
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32-bit MCU, Arm Cortex-M4, 120 MHz, 128KB Flash, 32KB SRAM, 2x12-bit 3MSPS ADC, 2x12-bit DAC, 10x16-bit timers, 2x16-bit PWM, 2x16-bit basic, 3xSPI, 2xI2C, 3xUSART, 2xUART, 2xI2S, USBFS, 1.71-3.6V, -40 to +85°C. |
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| GD32E113VBT6 |
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GigaDevice Semiconductor (Beijing) Inc
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32-bit, Cortex-M4, 120 MHz, 128 KB Flash, 32 KB SRAM, 1.71-3.6 V, -40 to +85 °C, 2x 12-bit ADC/DAC, 10x 16-bit timers, 2x PWM, 3x SPI, 2x I2C, 3x USART, 2x UART, 2x I2S, USBFS. |
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| GD32E113T8U6 |
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GigaDevice Semiconductor (Beijing) Inc
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32-bit MCU, Cortex-M4, 120 MHz, 128 KB Flash, 32 KB SRAM, ADCs, DACs, timers, PWM, SPIs, I2Cs, USARTs, UARTs, I2Ss, USBFS, 1.71-3.6 V, -40 to +85 °C. |
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| GD32E113CBT6 |
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GigaDevice Semiconductor (Beijing) Inc
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32-bit MCU, Cortex-M4, 120 MHz, 128 KB Flash, 32 KB SRAM, 1.71-3.6 V, -40 to +85 °C, 2x12-bit ADCs, 2x12-bit DACs, timers, PWM, SPIs, I2Cs, USARTs, UARTs, I2Ss, USBFS. |
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| GD32E113TBU6 |
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GigaDevice Semiconductor (Beijing) Inc
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32-bit, Cortex-M4, 120 MHz, 128 KB Flash, 32 KB SRAM, 1.71-3.6 V, -40 to +85 °C, dual 12-bit ADC/DAC, timers, PWM, comm interfaces. |
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| GD32E113R8T6 |
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GigaDevice Semiconductor (Beijing) Inc
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32-bit MCU, Cortex-M4, 120 MHz, 128 KB Flash, 32 KB SRAM, 2x 12-bit 3 MSPS ADC, 2x 12-bit DAC, 10x 16-bit timers, 2x PWM, 2x I2C, 3x USART, 2x UART, 2x I2S, USBFS, 1.71-3.6 V, -40 to +85 °C. |
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