32GHZ Search Results

Contextual Info: FMM5703X 24-32GHz LNA MMIC FEATURES • Low Noise Figure: NF = 2dB Typ. @ f=32 GHz • High Associated Gain: Gas = 18dB (Typ.) @ f=32 GHz • Wide Frequency Band: 24-32 GHz • High Output Power: 9dBm (Typ.) @ f=32 GHz • Impedance Matched Zin/Zout = 50Ω

Sharp amplifier SM 30

Abstract: 84-1LMI NN12 P35-5104-000-200 P35-5114-000-200 bond wire gold
Contextual Info: Marconi Optical Components P35-5114-000-200 HEMT MMIC Low Noise Amplifier, 2 - 32GHz Features • Typical 2.2dB Noise Figure @24GHz to 28GHz · 2.36 x 0.94mm Die Size Description The P35-5114-00-200 is a 20-32GHz Gallium Arsenide low noise amplifier. This product is intended for use in fixed-point

874 561 0 4V

Abstract: FMM5702 FMM5702X FUJITSU MMIC LNA
Contextual Info: FMM5702X 27-32GHz LNA MMIC FEATURES • Low Noise Figure: NF = 1.6dB Typ. @ f=30 GHz • High Associated Gain: Gas = 13dB (Typ.) @ f=30 GHz • Wide Frequency Band: 27-32 GHz • Impedance Matched Zin/Zout = 50Ω DESCRIPTION The FMM5702X is a LNA MMIC designed for

FMM5703VZ

Abstract: ED-4701 RO4003
Contextual Info: FMM5703VZ Preliminary K / Ka Band Low Noise Amplifier MMIC FEATURES ・Low Noise Figure : NF = 2.5dB typ. @ f=32GHz ・High Associated Gain : Gas = 16dB (typ.) @f=32GHz ・Broad Band : 24~32GHz ・High Output Power : P1dB = 8dBm ( Typ. ) @f=32GHz ・Ball Grid Array SMT Package(VZ-pkg)

sm 0038

Abstract: sm 0038 data sheet sm 0038 datasheet 84-1LMI NN12
Contextual Info: P35-5113-000-200 HEMT MMIC LNA 20 - 32GHz Features • • • Typical 2.1dB Noise Figure @24GHz &28GHz Self Biased Design 2.36 x 0.94mm Die Size Description The P35-5113-000-200 is a 20-32GHz Gallium Arsenide Self-Biased low noise amplifier. This product is intended

irf 2030

Abstract: FMM5118X idc 14 pin out fujitsu power amplifier GHz FCSI
Contextual Info: FMM5118X 20-32GHz Doubler MMIC FEATURES • Integrated Monolithic Doubler • High Harmonic Rejection • Single Supply Voltage • High Reliability DESCRIPTION The FMM5118X is a doubler, consisting of an X2 multiplier followed by a buffer amplifier for applications with an output

MONOLITHIC AMPLIFIERS

Abstract: short range wireless data communication circuit United Monolithic Semiconductors Monolithic Power Systems MFC-P08864 PH25
Contextual Info: PRESS RELEASE New Products Announcement Date : 19/04/2001 Author : Marketing group United Monolithic Semiconductors releases a new 27-32GHz monolithic down-converter To Business editors/High tech Writers th ORSAY , April 19 , 2001 Team Focus : Standard Products

FMM5709X

Abstract: ka band lna FMM5709 ED-4701 ka band mmic ka band lna satellite
Contextual Info: FMM5709X K / Ka Band Low Noise Amplifier MMIC FEATURES ・Low Noise Figure : NF = 2.5dB Typ. @ f=30GHz ・High Associated Gain : Gas = 23dB ( Typ.) @f=30GHz ・Broad Band : 17.5 ~ 32GHz ・High Output Power : P1dB = 12.5dBm ( Typ. ) @f=30GHz ・Impedance Matched Zin/Zout = 50Ω

CHM1291

Contextual Info: CHM1291 25-32GHz Single Side Band Mixer GaAs Monolithic Microwave IC Description The CHM1291 is a multifunction chip MFC which integrates a LO buffer amplifier and a subharmonically balanced diodes mixer for 2LO suppression and image rejection. It is usable

20-28GHz

Contextual Info: CHA2092a 18-32GHz Low Noise Amplifier GaAs Monolithic Microwave IC Description The CHA2092 is a high gain broadband threestage monolithic low noise amplifier. It is designed for a wide range of applications, from military to commercial communication systems. The backside of the chip is both RF

Contextual Info: FMM5703VZ K / Ka Band Low Noise Amplifier MMIC FEATURES ・Low Noise Figure : NF = 2.5dB typ. @ f=32GHz ・High Associated Gain : Gas = 16dB (typ.) @f=32GHz ・Broad Band : 24~32GHz ・High Output Power : P1dB = 8dBm ( Typ. ) @f=32GHz ・Ball Grid Array SMT Package(VZ-pkg)

FMM5702X

Abstract: FMM5702
Contextual Info: FMM5702X 27-32GHz LNA MMIC FEATURES • Low Noise Figure: NF = 1.6dB Typ. @ f=30 GHz • High Associated Gain: Gas = 13dB (Typ.) @ f=30 GHz • Wide Frequency Band: 27-32 GHz • Impedance Matched Zin/Zout = 50Ω DESCRIPTION The FMM5702X is a LNA MMIC designed for

Contextual Info: FMM5118X 20-32GHz Doubler MMIC FEATURES • Integrated Monolithic Doubler • High Harmonic Rejection • Single Supply Voltage • High Reliability DESCRIPTION The FMM5118X is a doubler, consisting of an X2 multiplier followed by a buffer amplifier for applications with an output

Contextual Info: FMM5116X 20-32GHz UP-Converter MMIC FEATURES Integrated Monolithic UP-Converter High Linearity Single Supply Voltage Operation High Reliability DESCRIPTION The FMM5116X is a double, single balanced diode mixer up-converter designed for applications in the 20 to 30GHz frequency range. The device

TGB2001

Abstract: TGB4001 TGB4002
Contextual Info: Product Data Sheet Aug 5, 2008 TGB2001 TGB4001 TGB4002 Lange Coupler Set Key Features and Performance • • • • • TGB2001 12-21GHz TGB4001 18-32GHz Very Low Loss <0.25dB Typical High Power 1W 50W Termination Broadband 3dB Power Split Chip dimensions: 1.0 x 3.0 x 0.1 mm

Contextual Info: FMM5116X 20-32GHz Upconverter MMIC FEATURES • • • • Integrated Monolithic Upconverter High Linearity Single Supply Voltage Operation High Reliability DESCRIPTION The FMM5116X is a double, single balanced diode mixer upconverter designed for applications in the 20 to 32GHz

FMM5703X

Contextual Info: FMM5703X 24-32GHz LNA MMIC FEATURES • Low Noise Figure: NF = 2dB Typ. @ f=32 GHz • High Associated Gain: Gas = 18dB (Typ.) @ f=32 GHz • Wide Frequency Band: 24-32 GHz • High Output Power: 9dBm (Typ.) @ f=32 GHz • Impedance Matched Zin/Zout = 50Ω

Contextual Info: CHA2092b 18-32GHz Low Noise Amplifier GaAs Monolithic Microwave IC Description The CHA2092 is a high gain broadband threestage monolithic low noise amplifier. It is designed for a wide range of applications, from military to commercial communication systems. The backside of the chip is both RF

IRF 2004

Contextual Info: FMM5117X 20-32GHz Downconverter MMIC FEATURES • • • • Integrated Monolithic Downconverter High Linearity Single Supply Voltage Operation High Reliability DESCRIPTION The FMM5117X is a double, single balanced diode mixer downconverter designed for applications in the 20 to 32GHz

84-1LMI

Abstract: NN12 P35-5114-000-200
Contextual Info: Data sheet HEMT MMIC LNA 20 - 32GHz Features • Typical 2.2dB Noise Figure @24GHz to 28GHz • 2.36 x 0.94mm Die Size The P35-5114-00-200 is a 20-32GHz Gallium Arsenide low noise amplifier. This product is intended for use in fixedpoint and point to point microwave systems.

FMM5709VZ

Abstract: ED-4701 RO4003 ka band lna
Contextual Info: FMM5709VZ K / Ka Band Low Noise Amplifier MMIC FEATURES ・Low Noise Figure : NF = 3.5dB Typ. @ f=26GHz ・High Associated Gain : Gas = 21dB ( Typ.) @f=26GHz ・Broad Band : 17.5~32GHz ・High Output Power : P1dB = 12dBm ( Typ. ) @f=26GHz ・Ball Grid Array SMT Package(VZ-pkg)

Contextual Info: CHA2092b RoHS COMPLIANT 18-32GHz Low Noise Amplifier GaAs Monolithic Microwave IC Description The CHA2092 is a high gain broadband three-stage monolithic low noise amplifier. It is designed for a wide range of applications, from military to commercial communication

PH25

Abstract: United Monolithic Semiconductors
Contextual Info: PRESS RELEASE New Products Announcement Date : 19/04/2001 Author : Marketing group United Monolithic Semiconductors releases a new 27-32GHz monolithic up-converter To Business editors/High tech Writers th ORSAY , April 19 , 2001 Team Focus : Standard Products

FMM5703X

Contextual Info: FMM5703X 24-32GHz LNA MMIC FEATURES • Low Noise Figure: NF = 2dB Typ. @ f=32 GHz • High Associated Gain: Gas = 18dB (Typ.) @ f=32 GHz • Wide Frequency Band: 24-32 GHz • High Output Power: 9dBm (Typ.) @ f=32 GHz • Impedance Matched Zin/Zout = 50Ω