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    3270 TRANSISTOR Search Results

    3270 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV
    Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Datasheet
    TTC5886A
    Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Datasheet
    TTA2097
    Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Datasheet
    TTA011
    Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / PW-Mini Datasheet
    TPCP8513
    Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PS-8 Datasheet

    3270 TRANSISTOR Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    halo tgm-240ns

    Abstract: TGM-250NS TGM-340 midcom 31160r HALO TGM-350 tgm-240ns TGM-250 TGM-240 CTX01-14659 TGM-240NS 6 pin
    Contextual Info: 19-3270; Rev 0; 4/04 +3V to +5V, 2500VRMS Isolated RS-485/RS-422 Transceivers with ±15kV ESD Protection The MAX3535E/MXL1535E isolated RS-485/RS-422 fullduplex transceivers provide 2500VRMS of galvanic isolation between the RS-485/RS-422 side and the processor


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    2500VRMS RS-485/RS-422 MAX3535E/MXL1535E RS-485/RS-422 1000kbps MAX3535E/MXL1535E 420kHz RS-485 halo tgm-240ns TGM-250NS TGM-340 midcom 31160r HALO TGM-350 tgm-240ns TGM-250 TGM-240 CTX01-14659 TGM-240NS 6 pin PDF

    TGM-240NS 6 pin

    Abstract: TGM-250NS
    Contextual Info: 19-3270; Rev 0; 4/04 KIT ATION EVALU E L B AVAILA +3V to +5V, 2500VRMS Isolated RS-485/RS-422 Transceivers with ±15kV ESD Protection The MAX3535E/MXL1535E isolated RS-485/RS-422 fullduplex transceivers provide 2500VRMS of galvanic isolation between the RS-485/RS-422 side and the processor


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    2500VRMS RS-485/RS-422 MAX3535E/MXL1535E 1000kbps 420kHz RS-485 TGM-240NS 6 pin TGM-250NS PDF

    B78304-A1477-A3

    Abstract: TGM-240 CTX01 31160r
    Contextual Info: 19-3270; Rev 0; 4/04 KIT ATION EVALU E L B AVAILA +3V to +5V, 2500VRMS Isolated RS-485/RS-422 Transceivers with ±15kV ESD Protection The MAX3535E/MXL1535E isolated RS-485/RS-422 fullduplex transceivers provide 2500VRMS of galvanic isolation between the RS-485/RS-422 side and the processor


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    2500VRMS RS-485/RS-422 MAX3535E/MXL1535E 1000kbps 420kHz RS-485 B78304-A1477-A3 TGM-240 CTX01 31160r PDF

    pnp Transistor TO92 5V 200mA

    Abstract: ZTX755 ZTX776 DSA003775 3270 transistor
    Contextual Info: PNP SILICON PLANAR MEDIUM POWER TRANSISTOR ZTX776 ISSUE 1 – JULY 94 FEATURES * 200 Volt VCEO * 1 Amp continuous current * Ptot= 1 Watt C B REFER TO ZTX755 FOR GRAPHS E E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage


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    ZTX776 ZTX755 -160V, -500mA, -50mA* -200mA* -10mA, pnp Transistor TO92 5V 200mA ZTX776 DSA003775 3270 transistor PDF

    Contextual Info: 4bE D • b3b?2S4 MOTOROLA 00=12^5 SC 3 ■ X S TR S /R P I0T b T ^33- 7 F) MOTOROLA SEMICONDUCTOR tm m m tm m m m m m m b h TECHNICAL DATA Ükä DM0 2C3792HV Chip PNP Silicon Power Transistor iiif in Discrete . . .designed for m edium -speed switching and amplifier applications.


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    2C3792HV PDF

    d686* transistor

    Abstract: westcode igbt transistor 1GE
    Contextual Info: WESTCODE Data Sheet Issue:- 1 IXYS Company      An Date:- 2 Aug, 2005 Prospective data Insulated Bi-Polar Gate Transistor Type TX168NA17A Development Type Number Absolute Maximum Ratings VOLTAGE RATINGS MAXIMUM LIMITS UNITS VCES Collector – emitter voltage


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    TX168NA17A TX168NA17A d686* transistor westcode igbt transistor 1GE PDF

    IRFF223

    Abstract: IRFF222 IRFF220 IRFF221
    Contextual Info: -Standard Power MOSFETs File Number IRFF220, IRFF221, IRFF222, IRFF223 1889 N-Channel Enhancement-Mode Power Field-Effect Transistors 3.0A and 3.5A, 150V - 200V rDS oni = 0.80 and 1.20 N-CHANNEL ENHANCEMENT MODE o Features: • m


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    IRFF220, IRFF221, IRFF222, IRFF223 1RFF221, IRFF222 IRFF223 IRFF220 IRFF221 PDF

    T2400GA45E

    Abstract: MJ6000 T2400
    Contextual Info: Date:- 22 Nov, 2005 Data Sheet Issue:- 1 Prospective Data    Insulated Gate Bi-Polar Transistor Type T2400GA45E Absolute Maximum Ratings MAXIMUM LIMITS VOLTAGE RATINGS UNITS VCES Collector – emitter voltage 4500 V VDC link Permanent DC voltage for 100 FIT failure rate


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    T2400GA45E VCES/100 T2400GA45E MJ6000 T2400 PDF

    Contextual Info: STU/D6025NL Green Product Feb 25,2006 Ver1.2 SamHop Microelectronics Corp. N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY VDSS ID RDS ON (mΩ) Super high dense cell design for low RDS(ON). Typ Rugged and reliable.


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    STU/D6025NL O-252 O-251 O-252AA U/D6025NL O-252 PDF

    Contextual Info: S T U/D6025NL S amHop Microelectronics C orp. Apr,20 2005 ver1.1 N-C hannel Logic Level E nhancement Mode Field E ffect Transistor F E AT UR E S P R ODUC T S UMMAR Y V DS S ID R DS ON ( mW) S uper high dense cell design for low R DS (ON ). T yp R ugged and reliable.


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    U/D6025NL O-252 O-251 O-252AA Tube/TO-252 O-252 PDF

    D6025

    Contextual Info: S T U/D6025NL S amHop Microelectronics C orp. Apr,20 2005 ver1.1 N-C hannel Logic Level E nhancement Mode Field E ffect Transistor F E AT UR E S P R ODUC T S UMMAR Y V DS S ID R DS ON ( mW) S uper high dense cell design for low R DS (ON ). T yp R ugged and reliable.


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    U/D6025NL O-252 O-251 O-252AA Tube/TO-252 O-252 D6025 PDF

    Contextual Info: STU/D802S Green Product S a mHop Microelectronics C orp. Ver 1.0 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY V DSS Super high dense cell design for low R DS ON . R DS(ON) (m Ω) Max ID Rugged and reliable. 35 @ VGS=10V


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    STU/D802S O-252 O-251 O-252AA O-252 PDF

    BFX38 MOTOROLA

    Abstract: bfx38 BFX40
    Contextual Info: M O T O RO LA SC XSTRS/R F 12E D | t,3fc.?254 QOÛbMôO M | M A X I M U M R A T IN G S S ym bol BFX38 BFX40 U n it C o lle ctor-E m itter Voltage VCEO 55 75 Vdc Collector-Base Voltage VcBO 55 75 Vdc Em itter-Base Voltage Vebo 5.0 Vdc C o lle ctor C urrent — Continuous


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    BFX38 BFX40 BFX38 MOTOROLA PDF

    transistor c 1974

    Contextual Info: 11 N AI1ER PHILIPS/DISCRETE bbS3=!31 001370a T QhZ D 86D 0 1 4 7 0 D 11 T BLW60 3 7- If _ V.H.F. P O W E R TRANSISTOR N-P-N silicon planar epitaxial transistor intended for use in class-A, B and 0 operated mobile, industrial and m ilitary transmitters with a nominal supply voltage of 12,5 V . The transistor is resistance stabilized.


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    001370a BLW60 0D13720 transistor c 1974 PDF

    tl082 CIRCUIT DIAGRAM

    Abstract: TLC322 TL082 icl7621 applications op tl082 TC913
    Contextual Info: Semiconductor, Inc. TC913A TC913B DUAL AUTO-ZEROED OPERATIONAL AMPLIFIERS FEATURES GENERAL DESCRIPTION • The TC913 is the world's first complete monolithic, dual auto-zeroed operational amplifier. The TC913 sets a new standard for low-power, precision dual-operational


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    TC913A TC913B 120dB 20msec. TC913B_ tl082 CIRCUIT DIAGRAM TLC322 TL082 icl7621 applications op tl082 TC913 PDF

    lm358 replacement

    Abstract: TC913 lm358 cmos TLC322 application of chopper amplifier replacement of mc1458 b893 MC1458 mc1458 equivalent MONOLITHIC AMPLIFIERS
    Contextual Info: 1 TC913A TC913B DUAL AUTO-ZEROED OPERATIONAL AMPLIFIERS 2 FEATURES GENERAL DESCRIPTION • The TC913 is the world's first complete monolithic, dual auto-zeroed operational amplifier. The TC913 sets a new standard for low-power, precision dual-operational amplifiers. Chopper-stabilized or auto-zeroed amplifiers


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    TC913A TC913B TC913 TC913 lm358 replacement lm358 cmos TLC322 application of chopper amplifier replacement of mc1458 b893 MC1458 mc1458 equivalent MONOLITHIC AMPLIFIERS PDF

    Contextual Info: VOICE COIL MOTOR DRIVER Providing control and drive of the voice coil motor used for head positioning in disk drive applications, the A8931SEA is a full-bridge driver which can be configured so that its output current is a direct function of an externally applied control voltage or current. This linear


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    A8931SEA EP-034-1 EP-039 PDF

    Contextual Info: D2 PA K BUK9629-100B N-channel TrenchMOS logic level FET Rev. 02 — 9 February 2011 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product has been designed and qualified to


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    BUK9629-100B 771-BUK9629-100B118 BUK9629-100B PDF

    Contextual Info: 8931 VOICE CO IL M O TO R D RIVER Providing control and drive of the voice coil m otor used for head positioning in disk drive applications, the A8931SEA is a full-bridge driver which can be configured so that its output current is a direct function of an externally applied control voltage or current. This linear


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    A8931SEA PDF

    Contextual Info: T ex as In str u m e n t s CD4517B Types Data sheet acquired from Harris Sem iconductor S C H S075 CMOS Dual 64-Stage Static Shift Register Q I6 4 - I I 6 — VED 0 4 6 4 - 2 I 5 -Q|6 6 3 14 -0 4 8 0 4 13 — w eb CL6 Features: • Low quiescent current - 10 nA/pkg typ.


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    CD4517B 64-Stage 4517B PDF

    SN74LS125AN

    Abstract: SN74LS125AN texas
    Contextual Info: The SN54125, SN54126, SN74125, SN74126, and SN54LS126A are obsolete and are no longer supplied. D D D SN54125, SN54126, SN54LS125A, SN54LS126A, SN74125, SN74126, SN74LS125A, SN74LS126A QUADRUPLE BUS BUFFERS WITH 3-STATE OUTPUTS Quad Bus Buffers 3-State Outputs


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    SN54125, SN54126, SN74125, SN74126, SN54LS126A SN54LS125A, SN54LS126A, SN74LS125AN SN74LS125AN texas PDF

    TSG 3255

    Abstract: 3268
    Contextual Info: NCN6000 Compact Smart Card Interface IC The NCN6000 is an integrated circuit dedicated to the smart card interface applications. The device handles any type of smart card through a simple and flexible microcontroller interface. On top of that, thanks to the built–in chip select pin, several couplers can be


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    NCN6000 ISO7816 TSG 3255 3268 PDF

    Contextual Info: HA-2840 JE h a r r i s M M S E M I C O N D U C T O R Mm /> 600 M H z, V ery H igh S le w R ate O p e ra tio n a l A m p lifie r November 1996 Features Description • Low Supply • Very High Slew R a te . 625V/^s


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    HA-2840 HA-2840 600MHz 483nm PDF

    QFN-32 footprint

    Abstract: QFN32* socket NB7L1008MMNG PRBS23 QFN32
    Contextual Info: NB7L1008M 2.5V / 3.3V 1:8 CML Fanout Multi−Level Inputs w/ Internal Termination Description http://onsemi.com The NB7L1008M is a high performance differential 1:8 Clock/Data fanout buffer. The NB7L1008M produces eight identical output copies of Clock or Data operating up to 6 GHz or 10.7 Gb/s, respectively. As


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    NB7L1008M NB7L1008M NB7L1008M/D QFN-32 footprint QFN32* socket NB7L1008MMNG PRBS23 QFN32 PDF